25 resultados para irradiation effect
em Indian Institute of Science - Bangalore - Índia
Resumo:
Prior ultraviolet irradiation of coal results in catalysing the subsequent thermal decomposition and ignition of coal. Mechanically, it is shown that ultraviolet radiation brings about the catalysis by acting on the inorganic components of coal.
Resumo:
We have prepared, characterized and investigated a new PEG-2000 based solid polymer electrolyte (PEG) x NH4I. Ionic conductivity measurements have been made as a function of salt concentration as well as temperature in the range 265–330 K. Selected compositions of the electrolyte were exposed to a beam of 8 MeV electrons to an accumulated dose of 10 kGy to study the effect on ionic conductivity. The electrolyte samples were also quenched at liquid nitrogen temperature and conductivity measurements were made. The ionic conductivity at room temperature exhibits a characteristic double peak for the composition x = 20 and 70. Both electron beam irradiation and quenching at low temperature have resulted in an increase in conductivity by 1–2 orders of magnitude. The enhancement of conductivity upon irradiation and quenching is interpreted as due to an increase in amorphous region and decrease in crystallinity of the electrolyte. DSC and proton NMR measurements also support this conclusion.
Resumo:
A comparative study of the switching properties of pure and √-irradiated TGSe crystals has been carried out to see the effect of irradiation on the structure and dynamics of domains. The switching behaviour of √-irradiated TGSe has been found to be qualitatively similar to that of unirradiated crystal and this has been interpreted in terms of structural inhibition caused by the formation of radiolysis products as well as the difference between the domain structures of the unirradiated and irradiated samples. Confirmation of this has been obtained by studying the domain patterns using the etch method.
Resumo:
A comparative study of the switching properties of pure and √-irradiated TGSe crystals has been carried out to see the effect of irradiation on the structure and dynamics of domains. The switching behaviour of √-irradiated TGSe has been found to be qualitatively similar to that of unirradiated crystal and this has been interpreted in terms of structural inhibition caused by the formation of radiolysis products as well as the difference between the domain structures of the unirradiated and irradiated samples. Confirmation of this has been obtained by studying the domain patterns using the etch method.
Resumo:
Polarization switching processes in TAAP and DTAAP have been studied by the Merz method. The switching process in DTAAP is slower than in TAAP. The temperature dependence of switching time indicates that the crystal might contain groups of domain nuclei with different activation energies. X-ray irradiation causes an increase in the threshold field below which switching could not occur and decrease in the mobility of domain walls. Irradiation decreases the peak value of dielectric constant, Tc and increases the value of coercive field. Domain structure studies on TAAP crystals have shown that the crystals grow as both predominantly single domain and multi domains, depending on which the internal bias increases or remains unaffected upon irradiation.
Resumo:
Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li3+ ions at various fluences ranging from 10(10) to 10(14) ions/cm(2) at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradiated, annealed wafers were carried out by infrared and Raman spectroscopies, Hall measurements, and high resolution x-ray diffraction (HRXRD). In the case of samples irradiated with an ion fluence of 1.6x10(14) ions/cm(2), electrical measurements at 80 K reveal that there is a decrease in carrier concentration from 8.5x10(15) (for unirradiated) to 1.1x10(15)/cm(3) and an increase in mobility from 5.4x10(4) to 1.67x10(5) cm(2)/V s. The change in carrier concentration is attributed to the creation of electron trap centers induced by ion beam irradiation and the increase in mobility to the formation of electrical inactive complexes. Nevertheless, even with the irradiation at 1.6x10(14) ions/cm(2) fluence the crystalline quality remains largely unaffected, as is seen from HRXRD and Raman studies. (C) 2001 American Institute of Physics.
Resumo:
The effect of 4.0 MeV proton irradiation on the microstructure and mechanical properties of nanocrystalline (nc) nickel was investigated. The irradiation damage induced in the sample was of the order of 0.004 dpa. Transmission electron microscopy of irradiated samples indicated the presence of dislocation loops within the grains. An increase in hardness and strain-rate sensitivity (m) of nc-Ni with irradiation was noted. The rate-controlling deformation mechanism in irradiated nc-Ni was identified to be interaction of dislocations with irradiation-induced defects. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Resumo:
The exposure with band gap light of thermally evaporated As40Sb15Se45 amorphous film of 800 nm thickness, were found to be accompanied by optical changes. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy and Raman spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra and Raman shift supports the optical changes happening in the film due to light exposure.
Resumo:
In spite of intense research on ZnO over the past decade, the detailed investigation about the crystallographic texture of as obtained ZnO thin films/coatings, and its deviation with growth surface is scarce. We report a systematic study about the orientation distribution of nanostructured ZnO thin films fabricated by microwave irradiation with the variation of substrates and surfactants. The nanostructured films comprising of ZnO nanorods are grown on semiconductor substrates such as Si(100), Ge(100)], conducting substrates (ITO-coated glass, Cr coated Si), and polymer coated Si (PMMA/Si) to examine the respective development of crystallographic texture. The ZnO deposited on semiconductor substrates yieldsmixed texture, whereas c-axis oriented ZnO nanostructured films are obtained by conducting substrate, and PMMA coated Si substrates. Among all the surfactants, nanostructured film produced by using the lower molecular weight of polymeric surfactants (polyvinylpyrrolidone) shows a stronger (0002) texture, and that can be tuned to (10 - 10) by increasing the molecular weight of the surfactant. The strongest basal pole is achieved for the ZnO deposited on PMMA coated Si as substrate, and cetyl-trimethyl ammonium bromide as cationic surfactant. The texture analysis is carried out by X-ray pole figure analysis using the Schultz reflection method. (C) 2015 Elsevier B.V. All rights reserved.
Resumo:
The change in photo-induced optical properties in thermally evaporated Ge12Sb25Se63 chalcogenide thin film under 532-nm laser illumination has been reported in this paper. The structure and composition of the film have been examined by X-ray diffraction and energy dispersive X-ray analysis, respectively. The optical properties such as refractive index, extinction coefficient and thickness of the films have been determined from the transmission spectra based on inverse synthesis method and the optical band gap has been derived from optical absorption spectra using the Tauc plot. It has been found that the mechanism of the optical absorption is due to allowed indirect transition. The optical band gap increases by 0.05 eV causing photo-bleaching mechanism, while refractive index decreases because of reduction in structural disordering. Deconvolution of Raman and X-ray photoelectron spectra into several peaks provides different structural units, which supports the optical photo-bleaching.
Resumo:
Tellurite-based glasses in the TeO2-K3Li2Nb5O15, TeO2-Ba5Li2Ti2Nb8O30, and V2Te2O9 were fabricated by the conventional melt-quenching technique. Amorphous and glassy characteristics of the as-quenched samples were established via the X-ray powder diffraction technique and differential thermal analysis, respectively. The as-quenched samples were irradiated by an excimer laser (248 nm). The effect of laser power, duration of irradiation, and the frequency of the laser pulses on the surface features of the above glasses were studied. The optical microscopic studies carried out on the above systems revealed the presence of quasi-periodic and periodic structures on their surfaces. The local compositional variations of these structures were confirmed by back-scattered electron imaging using scanning electron microscope accompanied by energy-dispersive X-ray analysis. These results were convincing enough to state that the glasses in the present investigations had undergone spinodal decomposition on laser irradiation. The incidence of the interconnected texture of two different phases was observed owing to the quenching effect produced by the heating and cooling cycle of the successive laser pulses. Ring- and line-shaped patterns were also observed, respectively, when the pulse frequency of the laser and the duration of irradiation were increased.
Resumo:
The influence of gold (similar to 35 nm diameter) as well as ReO3 (similar to 17 nm diameter) nanoparticles placed atop silicon photovoltaic devices on absorption and photocurrent generation has been investigated. The nanoparticles improve the power transmission into the semiconductor and consequently, the photocurrent response at wavelengths corresponding to plasmon absorption. An increase in short circuit current up to 4.5% under simulated solar irradiation was observed with the ReO3 nanoparticles, while the gold nanoparticles showed enhancements up to 6.5%. The increase in photocurrent is observed at wavelengths corresponding to the maxima in the surface plasmon resonance absorption spectra. (C) 2010 The Japan Society of Applied Physics
Resumo:
Pure Y2O3 and Y2O3---ZrO2 solid solutions have been prepared by melt atomization and by pyrolysis of nitrate solutions. Extended solubility is readily achieved in both techniques for the entire composition range investigated: melts with 0–30% ZrO2 and precursors with 0–50% ZrO2. However, solidification of under cooled droplets yields almost exclusively single phase powders with the structure of cubic yttria (D53). In contrast, the pyrolysis route leads to a sequence of metastable microstructures beginning with a nanocrystalline disordered fluorite-based (C1) solid solution. Further heating leads to the evolution of much larger (micron size) flake crystals with a {001} texture, concurrent with partial ordering of the oxygen ions to the sites occupied in the D53 structure. The driving force for ordering and the rate of grain growth decrease with increasing ZrO2 addition. Abrupt heating to high temperatures or electron irradiation can induce ordering without substantial grain growth. There is no significant reduction in porosity during the recrystallization, which with the other observations suggests that grain growth is driven by the free energy available for the ordering transformation from fluorite to the yttria structure. This route offers opportunities for single crystal thin film development at relatively low processing temperatures.
Resumo:
Pure Y2O3 and Y2O3-ZrO2 solid solutions have been prepared by melt atomization and by pyrolysis of nitrate solutions. Extended solubility is readily achieved in both techniques for the entire composition range investigated: melts with 0-30% ZrO2 and precursors with 0-50% ZrO2. However, solidification of under cooled droplets yields almost exclusively single phase powders with the structure of cubic yttria (D5(3)). In contrast, the pyrolysis route leads to a sequence of metastable microstructures beginning with a nanocrystalline disordered fluorite-based (C1) solid solution. Further heating leads to the evolution of much larger (micron size) flake crystals with a {001} texture, concurrent with partial ordering of the oxygen ions to the sites occupied in the D5(3) structure. The driving force for ordering and the rate of grain growth decrease with increasing ZrO2 addition. Abrupt heating to high temperatures or electron irradiation can induce ordering without substantial grain growth. There is no significant reduction in porosity during the recrystallization, which with the other observations suggests that grain growth is driven by the free energy available for the ordering transformation from fluorite to the yttria structure. This route offers opportunities for single crystal thin film development at relatively low processing temperatures.