The composition dependence of electrical switching behavior of Ge7Se93-xSbx glasses

Bulk Ge7Se93-xSbx (21 <= x <= 32) glasses are prepared by melt quenching method and electrical switching studies have been undertaken on these samples to elucidate the type of switching and the composition and thickness dependence of switching voltages. On the basis of the compressibility and atomic radii, it has been previously observed that Se-based glasses exhibit memory switching behavior. However, the present results indicate that Ge7Se93-xSbx glasses exhibit threshold type electrical switching with high switching voltages. Further, these samples are found to show fluctuations in the current-voltage (I-V) characteristics. The observed threshold behavior of Ge7Se93-xSbx glasses has been understood on the basis of larger atomic radii and lesser compressibilities of Sb and Ge. Further. the high switching voltages and fluctuations in the I-V characteristics of Ge-Se-Sb samples can be attributed to the high resistance of the samples and the difference in thermal conductivities of different structural units constituting the local structure of these glasses. The switching voltages of Ge7Se93-xSbx glasses have been found to decrease with the increase in the Sb concentration. The observed composition dependence of switching voltages has been understood on the basis of higher metallicity of the Sb additive and also in the light of the Chemically Ordered Network (CON) model. Further, the thickness dependence of switching voltages has been studied to reassert the mechanism of switching.

Electrical switching in benzidine-DDQ under pressure

The effect of pressure on non-ohmic conduction and electrical switching in the charge transfer complex benzidine-DDQ has been studied up to a pressure of 7·66 GPa at a temperature of 300K. Pulsed I-V measurements reveal heating contribution to non-ohmicity and switching. At high electric fields (∼ 3 × 103 V/cm), the sample switches from high resistance OFF state of several kiloohms to low resistance ON state of several ohms. Temperature dependence of conductivity of ON state show semiconducting behaviour with very low activation energy.

Electrical switching behavior of amorphous Al23Te77 thin film sample

The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.

Low threshold ovonic switching in a-Si:H/InSb heterostructures

a-Si:H/InSb structures have been fabricated by glow discharge deposition of a-Si on bulk InSb substrates in hydrogen atmosphere. The structure shows interesting switching properties, toggling between a high resistance and a conducting state with OFF to ON resistance ratio of 10(6) at remarkably low threshold voltages of 0.3 V at room temperature. The low threshold voltage for this structure, as compared to the higher switching threshold of about 30 V for other a-Si based structures, has been achieved by the use of InSb as a substrate, capable of high carrier injection. (C) 1997 Published by Elsevier Science Ltd.

Structural Relaxation and Crystallization in a Pd40Cu30Ni10P20 Bulk Metallic Glass

The stability of a Pd40Cu30Ni10P20 bulk metallic glass (BMG) against structural relaxation is investigated by isothermal and isochronal annealing heat treatments below and above its glass transition temperature, Tg, for varying periods. Differential scanning calorimetry (DSC) of the annealed samples shows an excess endotherm at Tg, irrespective of the annealing temperature. This recovery peak evolves exponentially with annealing time and is due to the destruction of anneal-induced compositional short range ordering. The alloy exhibits a high resistance to crystallization on annealing below Tg and complex Pd- and Ni-phosphides evolve on annealing above Tg.

Synthesis and electrochemical behaviour of NiFeCr nanoparticle coatings

NiFeCr nanoparticles with a Ni-rich composition were synthesized using a wet chemical synthesis technique. As-synthesized nanoparticles were crystalline with an average size of 6.8 +/- 2.5 nm. For electrochemical analysis, as-synthesized nanoparticles were mixed with epoxy and coated over a mild steel substrate. Electrochemical measurements exhibited a very high polarization resistance and very low corrosion current for the nanoparticle-epoxy coated sample illustrating high resistance of the NiFeCr nanoparticle-epoxy coating towards highly corrosive media.

Structure-rheology relationship in a sheared lamellar fluid

The structure-rheology relationship in the shear alignment of a lamellar fluid is studied using a mesoscale model which provides access to the lamellar configurations and the rheology. Based on the equations and free energy functional, the complete set of dimensionless groups that characterize the system are the Reynolds number (rho gamma L-2/mu), the Schmidt number (mu/rho D), the Ericksen number (mu(gamma)/B), the interface sharpness parameter r, the ratio of the viscosities of the hydrophilic and hydrophobic parts mu(r), and the ratio of the system size and layer spacing (L/lambda). Here, rho and mu are the fluid density and average viscosity, (gamma) over dot is the applied strain rate, D is the coefficient of diffusion, B is the compression modulus, mu(r) is the maximum difference in the viscosity of the hydrophilic and hydrophobic parts divided by the average viscosity, and L is the system size in the cross-stream direction. The lattice Boltzmann method is used to solve the concentration and momentum equations for a two dimensional system of moderate size (L/lambda = 32) and for a low Reynolds number, and the other parameters are systematically varied to examine the qualitative features of the structure and viscosity evolution in different regimes. At low Schmidt numbers where mass diffusion is faster than momentum diffusion, there is fast local formation of randomly aligned domains with ``grain boundaries,'' which are rotated by the shear flow to align along the extensional axis as time increases. This configuration offers a high resistance to flow, and the layers do not align in the flow direction even after 1000 strain units, resulting in a viscosity higher than that for an aligned lamellar phase. At high Schmidt numbers where momentum diffusion is fast, the shear flow disrupts layers before they are fully formed by diffusion, and alignment takes place by the breakage and reformation of layers by shear, resulting in defects (edge dislocations) embedded in a background of nearly aligned layers. At high Ericksen number where the viscous forces are large compared to the restoring forces due to layer compression and bending, shear tends to homogenize the concentration field, and the viscosity decreases significantly. At very high Ericksen number, shear even disrupts the layering of the lamellar phase. At low Ericksen number, shear results in the formation of well aligned layers with edge dislocations. However, these edge dislocations take a long time to anneal; the relatively small misalignment due to the defects results in a large increase in viscosity due to high layer stiffness and due to shear localization, because the layers between defects get pinned and move as a plug with no shear. An increase in the viscosity contrast between the hydrophilic and hydrophobic parts does not alter the structural characteristics during alignment. However, there is a significant increase in the viscosity, due to pinning of the layers between defects, which results in a plug flow between defects and a localization of the shear to a part of the domain.

Evaluation of Fracture Parameters by Double-G, Double-K Models and Crack Extension Resistance for High Strength and Ultra High Strength Concrete Beams

This paper presents the advanced analytical methodologies such as Double- G and Double - K models for fracture analysis of concrete specimens made up of high strength concrete (HSC, HSC1) and ultra high strength concrete. Brief details about characterization and experimentation of HSC, HSC1 and UHSC have been provided. Double-G model is based on energy concept and couples the Griffith's brittle fracture theory with the bridging softening property of concrete. The double-K fracture model is based on stress intensity factor approach. Various fracture parameters such as cohesive fracture toughness (4), unstable fracture toughness (K-Ic(c)), unstable fracture toughness (K-Ic(un)) and initiation fracture toughness (K-Ic(ini)) have been evaluated based on linear elastic fracture mechanics and nonlinear fracture mechanics principles. Double-G and double-K method uses the secant compliance at the peak point of measured P-CMOD curves for determining the effective crack length. Bi-linear tension softening model has been employed to account for cohesive stresses ahead of the crack tip. From the studies, it is observed that the fracture parameters obtained by using double - G and double - K models are in good agreement with each other. Crack extension resistance has been estimated by using the fracture parameters obtained through double - K model. It is observed that the values of the crack extension resistance at the critical unstable point are almost equal to the values of the unstable fracture toughness K-Ic(un) of the materials. The computed fracture parameters will be useful for crack growth study, remaining life and residual strength evaluation of concrete structural components.

High-Performance Sensors Based on Resistance Fluctuations of Single-Layer-Graphene Transistors

One of the most interesting predicted applications of graphenemonolayer-based devices is as high-quality sensors. In this article, we show, through systematic experiments, a chemical vapor sensor based on the measurement of lowfrequency resistance fluctuations of single-layer-graphene field-effect-transistor devices. The sensor has extremely high sensitivity, very high specificity, high fidelity, and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than 2 orders of magnitude better than a detection scheme in which changes in the average value of the resistance is monitored. We propose a number-densityfluctuation-based model to explain the superior characteristics of a noisemeasurement-based detection scheme presented in this article.

Exceptional resistance to grain growth in nanocrystalline CoCrFeNi high entropy alloy at high homologous temperatures

Nanocrystalline CoCrFeNi high entropy alloy, synthesized by mechanical alloying followed by spark plasma sintering, demonstrated extremely sluggish grain growth even at very high homologous temperature of 0.68 T-m (900 degrees C) for annealing duration of 600 h. Mechanically alloyed powder had carbon and oxygen as impurities, which in turn led to the formation of two-phase mixture of FCC and Cr-rich carbide with fine distribution of Cr-rich oxide during spark plasma sintering. Sluggish grain growth is attributed to the Zener pinning effect from the fine dispersion of oxide, mutual retardation of grain boundaries in the presence of two phases, and sluggish diffusivity because of cooperative diffusion of multi-principle elements. (C) 2015 Elsevier B.V. All rights reserved.

High temperature time-dependent low cycle fatigue behaviour of a type 316L(N) stainless steel

Total strain controlled low cycle fatigue tests on 316L(N) stainless steel have been conducted in air at various strain rates in the temperature range of 773-873 K to identify the operative time-dependent mechanisms and to understand their influence on the cyclic deformation and fracture behaviour of the alloy. The cyclic stress response at all the testing conditions was marked by an initial hardening followed by stress saturation. A negative strain rate stress response is observed under specific testing conditions which is attributed to dynamic strain ageing (DSA). Transmission electron microscopy studies reveal that there is an increase in the dislocation density and enhanced slip planarity in the DSA regime. Fatigue life is found to decrease with a decrease in strain rate. The degradation in fatigue resistance is attributed to the detrimental effects associated with DSA and oxidation. Quantitative measurement of secondary cracks indicate that both transgranular and intergranular cracking are accelerated predominantly under conditions conducive to DSA.

Studies on the Tracking and Erosion Resistance of RTV Silicone Rubber Nanocomposite

One of the problems associated with outdoor polymeric insulators is tracking and erosion of the weathershed which can directly influence the reliability of the power system. Flame retardants are added to the base material to enhance its tracking and erosion resistance. Hydroxide fillers are regarded as the best flame retardants. This paper deals with studies related to nano - sized magnesium dihydroxide (MDH) and micron-sized Alumina Trihydrate (ATH) fillers as flame retardants in RTV silicone rubber. Tracking and erosion resistance studies were carried out on MDH and ATH silicone rubber composites using an inclined plane tracking and erosion (IPT) resistance tester. The MDH filled (5% by wt) composites performed much better than ATH composites in terms of eroded mass, depth of erosion, width and length of erosion. The eroded mass of MDH composite is 49.8 % that of ATH composite which can be attributed to high surface area and higher thermal stability of MDH nanofillers.

High-temperature superconductivity in La- and Lu-substituted YBa2,Cu3,O7, and related oxides

The perovskites, Y0.75La0.25Ba2Cu3O7 and Y0.75Lu0.25Ba2Cu3O7, show high-Tc superconductivity (with zero resistance at or above 80 K), just as the parent compound YBa2Cu3O7. The Lu-substituted oxide, with the smallest unit-cell parameters, shows the highest Tc besides exhibiting a 100% Meissner effect. Hc1, in these oxides is around 25 mT, but the Hc2, is large. The thermopower of YBa2Cu3O7 shows a sharp transition to zero at the superconducting transition, reinforcing the bulk nature of the superconductivity. Preliminary studies show that ErBa2Cu3O7 and Er0.5Y0.5Ba2Cu3O7 are both high-temperature superconductors with zero resistance in the 82-90 K range.

High-Tc superconductivity in the Er---Ba---Cu---O and related systems

ErBa2Cu3O7 and Er0.5Y0.5Ba2Cu3O7 are both high-Tc superconductors attaining zero resistance above 80 K. Preliminary studies indicate that Yb1−xYxBa2Cu3O7 also exhibits zero resistance above 77 K.

HIGH-Tc superconductivity in perovskite oxides of the Y-Ba-Cu-O system

Several biphasic compositions of the type Y3-xBa3+xCu6O14 show an onset of superconductivity in the 90-115K range, attaining zero resistance in the 70-85K range. The phase responsible for superconductivity in these compositions is a perovskite oxide of composition YBa2Cu3 O7. This oxide annealed in oxygen shows the onset of superconductivity at 120K and zero resistance at 87K. YBa2,Cu3O7 shows the highest Meissner effect of all oxide superconductors. The superconducting behaviour of the two perovskite oxides, Y0.95Ba1.95,Cu3O7 and Y1.05Ba1.95Cu3O7 show interesting features; a marked decrease in resistivity is observed from room temperature itself in the former oxide with zero resistance at 89K. Electron microscopy and infrared spectra of these oxides are briefly discussed.