Effect of Load on Dry Sliding Wear of Aluminum-Silicon Alloys

Aluminum-silicon alloy pins were slid against steel disks under nominally dry condition at a speed of 0.6 m s-1. Each pin was slid at a constant load for 5 min, the load being increased in suitable steps from 2 to 65 N. The results show the wear to increase almost monotonically with load, to be sensitive to the presence of silicon in the alloy, and to be insensitive to actual silicon content. The monotonic nature of wear rate-load characteristic suggests that one dominant wear mechanism prevails over the load range studied. Morphological studies of the pin surface and the debris support this contention and point to delamination as being the dominant mode of wear.

Role of silicon in resisting subsurface plastic deformation in tribology of aluminium-silicon alloys

Silicon particles standing proud on aluminium-silicon alloy surfaces provide protection in tribology. Permanent sinking of such particles into the matrix under load can be deleterious. The mechanical response of the alloy to nano-indentation of single silicon particles embedded in the matrix is explored. A nominal critical pressure required to plastically deform the matrix to permanently embed the particle is determined experimentally. Within a framework suggested by two-dimensional models of plastic response to indentation, a probable correlation is established between the normal mean pressure required to cause permanent sinking of silicon particles and a factor which relates the relevant particle dimensions.

Effect of magnesium addition and heat treatment on mild wear of hypoeutectic aluminium-silicon alloys

The effect of magnesium addition and subsequent heat treatment on mild wear of a cast hypoeutectic aluminium-silicon alloy when slid against EN 24 steel is studied. Morphology and chemistry of worn surface and subsurface are studied with a view to identify wear mechanism. Stability of an iron-aluminium mixed surface layer was found to be the key factor controlling wear resistance.

Mechanism of seizure of aluminium-silicon alloys dry sliding against steel

A steel ball was slid on aluminium-silicon alloys at different temperatures. After the coefficient of friction had been measured, the surface shear stress was deconvoluted using a two-term model of friction. The ratio of surface shear stress to bulk hardness was calculated as a function of temperature, silicon content and alloying additions. These results are qualitatively similar to those recorded for pre-seizure specimens slid against an En24 disc in a pin-on-disc machine. This similarity, when viewed in the context of the phenomenon of bulk shear, provides a model for seizure of these alloys.

Solubility and activity of oxygen in liquid germanium and germanium copper alloys

The solubility of oxygen in liquid germanium in the temperature range 1233 to 1397 K, and in liquid germanium-copper alloys at 1373 K, in equilibrium with GeO2 has been measured by the phase equilibration technique. The solubility of oxygen in pure germanium is given by the relation R470 log(at. pct 0)=-6470/T+4.24 (±0.07). The standard free energy of solution of oxygen in liquid germanium is calculated from the saturation solubility, and recently measured values for the free energy of formation of GeO2, assuming that oxygen obeys Sievert’s law up to the saturation limit. For the reaction, 1/2 O2(g)→ OGe ΔG° =-39,000 + 3.21T (±500) cal = -163,200 + 13.43T (±2100) J. where the standard state for dissolved oxygen is that which makes the value of activity equal to the concentration (in at. pct), in the limit, as concentration approaches zero. The effect of copper on the activity of oxygen dissolved in liquid germanium is found to be in good agreement with that predicted by a quasichemical model in which each oxygen was assumed to be bonded to four metal atoms and the nearest neighbor metal atoms to an oxygen atom are assumed to lose approximately half of their metallic bonds.

Surface Structures of Silicon and Germanium

Si and Ge were cleaved on the (111) plane under ultra high vacuum and exposed to O and subsequent heat treatment. LEED and spot photometric measurements were taken. Cleaved surfaces for both Si and Ge gave the expected (2 x 1) structure. Results for O exposure were qualitatively for Si and Ge. The 1/2 orders disappeared after exposure to approx = 10 exp - exp 7. Integral orders started to weaken at 10 exp -6 to 10 exp - exp 2 torr min., disappearing at 10 exp -1 torr min. Heat treatment of Si at 900 deg C for several seconds restored the integral orders and further heating gave a new pattern with 1/3 orders. Exposure to 2 x 10 exp -6 torr min O without further heating weakened the fractional orders and at 10 exp -5 torr min they disappeared. Integral orders remained after further heating in O. For Ge integral orders were not restored after 0 exposure until heat treatment had continued at 550 deg C for several min. The (1 x 1) structure disappeared after heating at 590 deg C in 7 x 10 exp -1 torr O and further heating at 590 deg C without O restored the integral order Variations of intensity with voltage were measured for the (00) and (20) spots. The results supported a model proposed by Haneman (Phys. Rev., 1968, 170, 705) involving two kinds of atom sites on the cleaved surface. 20 ref.--E.J.S.

Origin of noise in two dimensionally doped Silicon and Germanium

We present the study of low-frequency noise, or 1/f noise, in degenerately doped Si: P and Ge: P delta-layers at low temperatures. For the Si: P d-layers we find that the noise is several orders of magnitude lower than that of bulk Si: P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. Ge: P d-layers as a function of perpendicular magnetic field, shows a factor of two reduction in noise magnitude at the scale of B-phi, where B-phi is phase breaking field. We show that this is a characteristic feature of universal conductance fluctuations.

Spontaneous Breaking of Time-Reversal Symmetry in Strongly Interacting Two-Dimensional Electron Layers in Silicon and Germanium

We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si: P and Ge: P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

Subsurface deformation in dry sliding of hypo-eutectic Al-Si alloys

The subsurface deformation during dry sliding of Al-Si alloys is studied by fragmentation of silicon particles. The size of the fragmented particles does not vary with load. The depth of deformation is found to increase with increase in normal load. This experimental observation agrees with load-deformation depth characteristics obtained by a slip line field model.

Characterization of dry sliding wear of Al---Si alloys

Controversy exists in the published literature as to the effect of silicon content and pressure on the dry sliding wear of Al---Si alloys. The present paper attempts to clarify the question by reporting a statistical analysis of data obtained from factorially designed experiments conducted on a pinon-disc machine in the pressure range 0.105–1.733 MPa and speed range 0.19–0.94 m s−1. Under these conditions it was found that, in the range 4–24 wt.% Si, wear of binary unmodified alloys does not significantly differ between the alloys. However, it is significantly less than that corresponding to an alloy containing no silicon. The effect of pressure on wear rate was found to be linear and monotonie and, over the narrow range of speeds used, the wear rate was found to be unaffected by speed. The coefficient of friction was found to be insensitive to variations in silicon content, pressure and speed.

Wear resistance of cast graphitic aluminium alloys

Wear rates of several cast aluminium base alloys have been measured for lubricated rubbing against a rotating hardened steel disk. Wear rates of cast graphitic aluminium-silicon-nickel alloys were lower than those of pure Al, Al-Si and Al-Si-Ni alloys especially above pressures of 0.02 kg/mm2. The high wear resistance is attributed to the presence of graphite particles in the matrix which act as a solid lubricant. Additions of nickel alone to Al-Si alloys decrease the wear resistance. Graphitic aluminium-silicon-nickel alloys containing above 2% graphite can be mated unlubricated against the rotating steel disk after a one minute lubricated run-in period. Graphite particles may be potentially suitable to replace part of all of the tin in aluminium-tin bearing alloys.

Effect of microstructure and mechanical properties on the seizure resistance of cast aluminium alloys

Seizure resistance of several cast aluminium base alloys has been examined using a standard Hohman Wear Tester. Disks of aluminium base alloys were run against a standard aluminium 12% silicon base alloy. The seizure resistance of the alloys (as measured by the lowest bearing parameter reached before seizure) increased with hardness, yield and tensile strength. In Al-Si-Ni alloys where silicon and nickel have little solid solubility in α-aluminium and Si and Ni Al3 hard phases are formed, the minimum bearing parameter decreased with the parameter V (The product of vol. % of hard phases in the disk and the shoe). Apparently the silicon and NiAl3 particles provided discontinuities in the matrix and reduced the probability (1 − V) of the α-aluminium phase in the disk coming into contact with the α-aluminium phase in the shoe. The copper and magnesium containing Al-Si-Ni alloys with lesser volumes of hard phases exhibit considerably better seizure resistance indicating that a slight increase in the solute content or the hardness of the primary α-phase leads to a considerable increase in seizure resistance. Deformation during wear and seizure leads to fragmentation of the original hard particles into considerably smaller particles uniformly dispersed in the deformed α-aluminium matrix.

Wear resistance of cast graphitic aluminium alloys

Wear rates of several cast aluminium base alloys have been measured for lubricated rubbing against a rotating hardened steel disk. Wear rates of cast graphitic aluminium-silicon-nickel alloys were lower than those of pure Al, Al-Si and Al-Si-Ni alloys especially above pressures of 0.02 kg/mm2. The high wear resistance is attributed to the presence of graphite particles in the matrix which act as a solid lubricant. Additions of nickel alone to Al-Si alloys decrease the wear resistance. Graphitic aluminium-silicon-nickel alloys containing above 2% graphite can be mated unlubricated against the rotating steel disk after a one minute lubricated run-in period. Graphite particles may be potentially suitable to replace part of all of the tin in aluminium-tin bearing alloys.

Thick PECVD Germanium films for MEMS Application

Plasma enhanced chemical vapour deposition (PECVD) of thick germanium (Ge) films (similar to 1 mu m) on silicon dioxide (SiO2) at low temperatures is described. A diborane pretreatment on SiO2 films is done to seed the Ge growth, followed by the deposition of thick Ge films using germane (GeH4) and argon (Ar). Further, the effect of hydrogen (H-2) dilution on the deposition rate is also investigated. The film thickness and morphology is characterized using SEM. Use of high RF power and substrate temperature show increased deposition rate. EDS analysis indicates that these films contain 97-98 atomic percentage of Ge. A recipe for anisotropic dry etching of the deposited Ge films with 10nm/ min etch rate is also suggested.

Glass forming ability and stability: Ternary Cu bearing Ti, Zr, Hf alloys

Four Cu bearing alloys of nominal composition Zr25Ti25Cu50, Zr34Ti16Cu50, Zr25Hf25Cu50 and Ti25Hf25Cu50 have been rapidly solidified in order to produce ribbons. All the alloys become amorphous after meltspinning. In the Zr34Ti16Cu50 alloy localized precipitation of cF24 Cu5Zr phase can be observed in the amorphous matrix. The alloys show a tendency of phase separation at the initial stages of crystallization. The difference in crystallization behavior of these alloys with Ni bearing ternary alloys can be explained by atomic size, binary heat of mixing and Mendeleev number. It has been observed that both Laves and Anti-Laves phase forming compositions are suitable for glass formation. The structures of the phases, precipitated during rapid solidification and crystallization can be viewed in terms of Bernal deltahedra and Frank-Kasper polyhedra.