3 resultados para film review

em Indian Institute of Science - Bangalore - Índia


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This review gives a brief description of the historical development followed by the origin and the principle of operation of strain gauges. The features of an ideal strain gauge for measurement purposes and the general classes of strain gauges are given. The remaning part is devoted to an important development in strain gauge technology, namely thin film strain gauges. After highlighting the advantages of thin film strain gauges, a review of current data is given. Detailed description of metallic thin film strain gauges is provided and avaliable information on alloy semiconductor and cermet films for their possible use as strain gauge elements has also been included. The importance of ion implantation in tailoring the properties of strain gauges is highlighted. 33 ref.--AA

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Polytetrafluoroethylene (PTFE) is an important engineering material. When rubbed or slid against a hard surface, PTFE exhibits a low coefficient of friction but a high rate of wear. These unique properties of the polymer have encouraged many mechanistic and physical examinations of the processes involved in the friction and wear of this polymer. A section of such work carried out over the past 30 years is reviewed here. When rubbed against a hard surface, the PTFE chain undergoes scission, creating active groups which chemically react with the counterface. This results in strong adhesion and a coherent transfer film. Further interaction between the bulk polymer and the transfer film gives rise to anisotropic deformation of the unit cell, which results in closeness of adjacent chains and easy shear between chains. Sliding brings about growth in as well as reorientation of crystallites situated in a very thin subsurface region of the bulk polymer. Such structural rearrangement facilitates the joining of adjacent aligned crystallites to form films and ribbons which emerge as debris.

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Among the armoury of photovoltaic materials, thin film heterojunction photovoltaics continue to be a promising candidate for solar energy conversion delivering a vast scope in terms of device design and fabrication. Their production does not require expensive semiconductor substrates and high temperature device processing, which allows reduced cost per unit area while maintaining reasonable efficiency. In this regard, superstrate CdTe/CdS solar cells are extensively investigated because of their suitable bandgap alignments, cost effective methods of production at large scales and stability against proton/electron irradiation. The conversion efficiencies in the range of 6-20% are achieved by structuring the device by varying the absorber/window layer thickness, junction activation/annealing steps, with more suitable front/back contacts, preparation techniques, doping with foreign ions, etc. This review focuses on fundamental and critical aspects like: (a) choice of CdS window layer and CdTe absorber layer; (b) drawbacks associated with the device including environmental problems, optical absorption losses and back contact barriers; (c) structural dynamics at CdS-CdTe interface; (d) influence of junction activation process by CdCl2 or HCF2Cl treatment; (e) interface and grain boundary passivation effects; (f) device degradation due to impurity diffusion and stress; (g) fabrication with suitable front and back contacts; (h) chemical processes occurring at various interfaces; (i) strategies and modifications developed to improve their efficiency. The complexity involved in understanding the multiple aspects of tuning the solar cell efficiency is reviewed in detail by considering the individual contribution from each component of the device. It is expected that this review article will enrich the materials aspects of CdTe/CdS devices for solar energy conversion and stimulate further innovative research interest on this intriguing topic.