Defect-selective photothermal imaging: a sensitive tool for damage mapping in optical coatings

A defect-selective photothermal imaging system for the diagnostics of optical coatings is demonstrated. The instrument has been optimized for pump and probe parameters, detector performance, and signal processing algorithm. The imager is capable of mapping purely optical or thermal defects efficiently in coatings of low damage threshold and low absorbance. Detailed mapping of minor inhomogeneities at low pump power has been achieved through the simultaneous action of a low-noise fiber optic photothermal beam defection sensor and a common-mode-rejection demodulation (CMRD) technique. The linearity and sensitivity of the sensor have been examined theoretically and experimentally, and the signal to noise ratio improvement factor is found to be about 110 compared to a conventional bicell photodiode. The scanner is so designed that mapping of static or shock sensitive samples is possible. In the case of a sample with absolute absorptance of 3.8 x 10(-4), a change in absorptance of about 0.005 x 10(-4) has been detected without ambiguity, ensuring a contrast parameter of 760. This is about 1085% improvement over the conventional approach containing a bicell photodiode, at the same pump power. The merits of the system have been demonstrated by mapping two intentionally created damage sites in a MgF2 coating on fused silica at different excitation powers. Amplitude and phase maps were recorded for thermally thin and thick cases, and the results are compared to demonstrate a case which, in conventional imaging, would lead to a deceptive conclusion regarding the type and location of the damage. Also, a residual damage profile created by long term irradiation with high pump power density has been depicted.

Microprocessor-controlled automatic focusing of a lens

Maximum intensity contrast has been used as a measure of lens defocus. A photodiode array under the control of 8085 microprocessor is used to measure the maximum intensity contrast and to position the lens for best focus. The lens is moved by a stepper motor under processor control at a speed of 350 to 500 steps/s. At this speed, focusing time was found to be between 5 and 8 s. Under coherent illuminating conditions, an accuracy of ± 50 μm has been achieved.

Stresses and Displacements under a Flexible Circular Foundation in the Presence of Friction or Adhesion

Die Vorliegende Arbeit beschäftigt sich mit den Spannungen und Verschiebungen an einem elastischen Halbraum unter einem kreisförmigen biegsamen Fundament, wenn an der Kontaktfläche vollkommenes Haften besteht. Das gemischte Randwertproblem wird mit Hilfe von Hankel-Transformationen auf duale Integralgleichungen von Titchmarsh- Typ zurückgeführt. Für die Berechnung der Spannungen und Verschiebungen werden Gaußsche Quadraturformeln benutzt. Die Ergebnisse werden mit denen verglichen, die man bei glattem Fundament erhält, und der Einfluß der Poisson-Zahl auf die Spannungen und Verschiebungen wird deutlich gemacht. Schließlich werden die Ergebnisse für den praktischen Gebrauch in Diagrammen und Tabellen zusammengefaßt.

Stresses and Displacements under a Flexible Circular Foundation in the Presence of Friction or Adhesion

Die Vorliegende Arbeit beschäftigt sich mit den Spannungen und Verschiebungen an einem elastischen Halbraum unter einem kreisförmigen biegsamen Fundament, wenn an der Kontaktfläche vollkommenes Haften besteht. Das gemischte Randwertproblem wird mit Hilfe von Hankel-Transformationen auf duale Integralgleichungen von Titchmarsh- Typ zurückgeführt. Für die Berechnung der Spannungen und Verschiebungen werden Gaußsche Quadraturformeln benutzt. Die Ergebnisse werden mit denen verglichen, die man bei glattem Fundament erhält, und der Einfluß der Poisson-Zahl auf die Spannungen und Verschiebungen wird deutlich gemacht. Schließlich werden die Ergebnisse für den praktischen Gebrauch in Diagrammen und Tabellen zusammengefaßt.

EIT as a tool to observe dual wavelength operation of a semiconductor laser

We propose a simplified technique for dual wavelength operation of an extended cavity semiconductor laser, and its characterization using electromagnetically induced transparency (EIT). In this laser cavity scheme light beam is made converging before it incidences on the cavity grating. The converging angle of the beam creates two longitudinal oscillating modes of resonating cavity. Frequency separation between the longitudinal modes are measured with the help of beat frequency generation in a photodiode and creating pair of EIT spectra in Rb vapor. The pair of EIT dips that are generated due to dual wavelength of this laser (that is used as control laser) can be used to estimate frequency difference between the generated wavelengths. Width of EIT spectra can be used to estimate line width of individual wavelength components.

Noise measurements of a phase fluorometric instrument

We present noise measurements of a phase fluorometric oxygen sensor that sets the limits of accuracy for this instrument. We analyze the phase sensitive detection measurement system with the signal ''shot'' noise being the only significant contribution to the system noise. Based on the modulated optical power received by the photomultiplier, the analysis predicts a noise spectral power density that was within 3 dB of the measured power spectral noise density. Our results demonstrate that at a received optical power of 20 fW the noise level was low enough to permit the detection of a change oxygen concentration of 1% at the sensor. We also present noise measurements of a new low-cost version of this instrument that uses a photodiode instead of a photomultiplier. These measurements show that the noise for this instrument was limited by noise generated in the preamplifier following the photodiode. (C) 1996 Society of Photo-Optical Instrumentation Engineers.

Transport properties of CuIn1-xAlxSe2/AZnO heterostructure for low cost thin film photovoltaics

CuIn1-xAlxSe2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (Delta(SO)) and crystal field (Delta(CF)) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn1-xAlxSe2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A. M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 x 10(-3) A in the dark at 1 V to 3 x 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity R-lambda similar to 920 A W-1, sensitivity S similar to 9.0, specific detectivity D* similar to 3 x 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.