Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene

Grain boundaries (GBs) are undesired in large area layered 2D materials as they degrade the device quality and their electronic performance. Here we show that the grain boundaries in graphene which induce additional scattering of carriers in the conduction channel also act as an additional and strong source of electrical noise especially at the room temperature. From graphene field effect transistors consisting of single GB, we find that the electrical noise across the graphene GBs can be nearly 10 000 times larger than the noise from equivalent dimensions in single crystalline graphene. At high carrier densities (n), the noise magnitude across the GBs decreases as proportional to 1/n, suggesting Hooge-type mobility fluctuations, whereas at low n close to the Dirac point, the noise magnitude could be quantitatively described by the fluctuations in the number of propagating modes across the GB.

Analysis Of The Energy Quantization Effects On Single Electron Inverter Performance Through Noise Margin Modeling

Possible integration of Single Electron Transistor (SET) with CMOS technology is making the study of semiconductor SET more important than the metallic SET and consequently, the study of energy quantization effects on semiconductor SET devices and circuits is gaining significance. In this paper, for the first time, the effects of energy quantization on SET inverter performance are examined through analytical modeling and Monte Carlo simulations. It is observed that the primary effect of energy quantization is to change the Coulomb Blockade region and drain current of SET devices and as a result affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. It is shown that SET inverter designed with CT : CG = 1/3 (where CT and CG are tunnel junction and gate capacitances respectively) offers maximum robustness against energy quantization.

Modeling and analysis of energy quantization effects on single electron inverter performance

In this paper, for the first time, the effects of energy quantization on single electron transistor (SET) inverter performance are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantization mainly changes the Coulomb blockade region and drain current of SET devices and thus affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new analytical model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. A compact expression is developed for a novel parameter quantization threshold which is introduced for the first time in this paper. Quantization threshold explicitly defines the maximum energy quantization that an SET inverter logic circuit can withstand before its noise margin falls below a specified tolerance level. It is found that SET inverter designed with CT:CG=1/3 (where CT and CG are tunnel junction and gate capacitances, respectively) offers maximum robustness against energy quantization.

Impact of Energy Quantization on the Performance of Current-Biased SET Circuits

The current-biased single electron transistor (SET) (CBS) is an integral part of almost all hybrid CMOS SET circuits. In this paper, for the first time, the effects of energy quantization on the performance of CBS-based circuits are studied through analytical modeling and Monte Carlo simulations. It is demonstrated that energy quantization has no impact on the gain of the CBS characteristics, although it changes the output voltage levels and oscillation periodicity. The effects of energy quantization are further studied for two circuits: negative differential resistance (NDR) and neuron cell, which use the CBS. A new model for the conductance of NDR characteristics is also formulated that includes the energy quantization term.

Performance Analysis of MQAM-OFDM based WLAN in presence of Zigbee interference in AWGN and Rayleigh fading channel

In this paper we give the performance of MQAM OFDM based WLAN in presence of single and multiple channels Zigbee interference. An analytical model for getting symbol error rate (SER) in presence of single and multiple channel Zigbee interference in AWGN and Rayleigh fading channel for MQAM OFDM system is given. Simulation results are compared with analytical symbol error rate (SER) of the MQAM-OFDM system. For analysis we have modeled the Zigbee interference using the power spectral density (PSD) of OQPSK modulation and finding the average interference power for each sub-carrier of the OFDM system. Then we have averaged the SER over all WLAN sub-carriers. Simulations closely match with the analytical models. It is seen from simulation and analytical results that performance of WLAN is severely affected by Zigbee interference. Symbol error rate (SER) for 16QAM and 64QAM OFDM system is of order of 10(-2) for SIR (signal to interference ratio) of 20dB and 30dB respectively in presence of single Zigbee interferer inside the WLAN frequency band for Rayleigh fading channel. For SIR values more than 30dB and 40dB the SER approaches the SER without interference for 16QAM and 64QAM OFDM system respectively.

Development and transient performance results of a single stage activated carbon - HFC 134a closed cycle adsorption cooling system

A laboratory model of a thermally driven adsorption refrigeration system with activated carbon as the adsorbent and 1,1,1,2-tetrafluoroethane (HFC 134a) as the refrigerant was developed. The single stage compression system has an ensemble of four adsorbers packed with Maxsorb II specimen of activated carbon that provide a near continuous flow which caters to a cooling load of up to 5W in the 5-18 degrees C region. The objective was to utilise the low grade thermal energy to drive a refrigeration system that can be used to cool some critical electronic components. The laboratory model was tested for it performance at various cooling loads with the heat source temperature from 73 to 93 degrees C. The pressure transients during heating and cooling phases were traced. The cyclic steady state and transient performance data are presented. (C) 2010 Elsevier Ltd. All rights reserved.

Finite data performance of MUSIC and minimum norm methods

In the direction of arrival (DOA) estimation problem, we encounter both finite data and insufficient knowledge of array characterization. It is therefore important to study how subspace-based methods perform in such conditions. We analyze the finite data performance of the multiple signal classification (MUSIC) and minimum norm (min. norm) methods in the presence of sensor gain and phase errors, and derive expressions for the mean square error (MSE) in the DOA estimates. These expressions are first derived assuming an arbitrary array and then simplified for the special case of an uniform linear array with isotropic sensors. When they are further simplified for the case of finite data only and sensor errors only, they reduce to the recent results given in [9-12]. Computer simulations are used to verify the closeness between the predicted and simulated values of the MSE.

Performance Analysis of TCP Uploads in WLANs with Multiple Rates

Throughput analysis of bulk TCP downloads in cases where all WLAN stations are associated at the same rate with the AP is available in the literature. In this paper,we extend the analysis to TCP uploads for the case of multirate associations. The approach is based on a two-dimensional semi- Markov model for the number of backlogged stations. Analytical results are in excellent agreement with simulations performed using QUALNET 4.5.

Impact of Energy Expenditure Rate Constraints on the performance of Multihop Wireless Mesh Networks

In this article we study the problem of joint congestion control, routing and MAC layer scheduling in multi-hop wireless mesh network, where the nodes in the network are subjected to maximum energy expenditure rates. We model link contention in the wireless network using the contention graph and we model energy expenditure rate constraint of nodes using the energy expenditure rate matrix. We formulate the problem as an aggregate utility maximization problem and apply duality theory in order to decompose the problem into two sub-problems namely, network layer routing and congestion control problem and MAC layer scheduling problem. The source adjusts its rate based on the cost of the least cost path to the destination where the cost of the path includes not only the prices of the links in it but also the prices associated with the nodes on the path. The MAC layer scheduling of the links is carried out based on the prices of the links. We study the e�ects of energy expenditure rate constraints of the nodes on the optimal throughput of the network.

Performance Enhancement of the Tunnel Field Effect Transistor using SiGe Source

Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

On Optimal Performance in Mobile Ad-Hoc Networks

In this paper we are concerned with finding the maximum throughput that a mobile ad hoc network can support. Even when nodes are stationary, the problem of determining the capacity region has long been known to be NP-hard. Mobility introduces an additional dimension of complexity because nodes now also have to decide when they should initiate route discovery. Since route discovery involves communication and computation overhead, it should not be invoked very often. On the other hand, mobility implies that routes are bound to become stale resulting in sub-optimal performance if routes are not updated. We attempt to gain some understanding of these effects by considering a simple one-dimensional network model. The simplicity of our model allows us to use stochastic dynamic programming (SDP) to find the maximum possible network throughput with ideal routing and medium access control (MAC) scheduling. Using the optimal value as a benchmark, we also propose and evaluate the performance of a simple threshold-based heuristic. Unlike the optimal policy which requires considerable state information, the heuristic is very simple to implement and is not overly sensitive to the threshold value used. We find empirical conditions for our heuristic to be near-optimal as well as network scenarios when our simple heuristic does not perform very well. We provide extensive numerical and simulation results for different parameter settings of our model.

Mixed ionic and electronic conduction in zirconia and its applications in metallurgy

Mixed ionic and electronic conduction in Zr02-based solid electrolytes was studied.The effect of impurities and second-phase particles on the mixed conduction parameter, P,, was measured for different types of ZrOZ electrolytes. The performance of solid-state sensors incorporating ZrOZ electrolytes is sometimes limited by electronic conduction in ZrOZ, especially at temperatures >I800 K. Methods for eliminating or minimizing errors in measured emf due to electronically driven transport of oxygen anions are discussed. Examples include probes for monitoring oxygen content in liquid steel as well as the newly developed sulfur sensor based on a ZrOz(Ca0) + CaS electrolyte. The use of mixed conducting ZrOZ as a semipermeable membrane or chemically selective sieve for oxygen at high temperatures is discussed. Oxygen transport from liquid iron to CO + C& gas mixtures through a ZrOZ membrane driven by a chemical potential gradient, in the absence of electrical leads or imposed potentials, was experimentally observed.