Signature of a silver phase percolation threshold in microscopically phase separated ternary Ge0.15Se0.85-xAgx (0≤x≤0.20) glasses

Temperature modulated alternating differential scanning calorimetric studies show that Se rich Ge0.15Se0.85−xAgx (0 x 0.20) glasses are microscopically phase separated, containing Ag2Se phases embedded in a Ge0.15Se0.85 backbone. With increasing silver concentration, Ag2Se phase percolates in the Ge–Se matrix, with a well-defined percolation threshold at x = 0.10. A signature of this percolation transition is shown up in the thermal behavior, as the appearance of two exothermic crystallization peaks. Density, molar volume, and microhardness measurements, undertaken in the present study, also strongly support this view of percolation transition. The superionic conduction observed earlier in these glasses at higher silver proportions is likely to be connected with the silver phase percolation.

Off-line signature verification using genetically optimized weighted features

This paper is concerned with off-line signature verification. Four different types of pattern representation schemes have been implemented, viz., geometric features, moment-based representations, envelope characteristics and tree-structured Wavelet features. The individual feature components in a representation are weighed by their pattern characterization capability using Genetic Algorithms. The conclusions of the four subsystems teach depending on a representation scheme) are combined to form a final decision on the validity of signature. Threshold-based classifiers (including the traditional confidence-interval classifier), neighbourhood classifiers and their combinations were studied. Benefits of using forged signatures for training purposes have been assessed. Experimental results show that combination of the Feature-based classifiers increases verification accuracy. (C) 1999 Pattern Recognition Society. Published by Elsevier Science Ltd. All rights reserved.

Concept of "Crossover Point" and its Application on Threshold Voltage Definition for Undoped-Body Transistors

As the conventional MOSFET's scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible candidate in terms of technology in sub-45nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body is used to sustain the channel. There exits a disparity in threshold voltage calculation criteria of undoped-body symmetric double gate transistors which uses two definitions, one is potential based and the another is charge based definition. In this paper, a novel concept of "crossover point'' is introduced, which proves that the charge-based definition is more accurate than the potential based definition.The change in threshold voltage with body thickness variation for a fixed channel length is anomalous as predicted by potential based definition while it is monotonous for charge based definition.The threshold voltage is then extracted from drain currant versus gate voltage characteristics using linear extrapolation and "Third Derivative of Drain-Source Current'' method or simply "TD'' method. The trend of threshold voltage variation is found same in both the cases which support charge-based definition.

Cubicity of threshold graphs

We show that the cubicity of a connected threshold graph is equal to inverted right perpendicularlog(2) alpha inverted left perpendicular, where alpha is its independence number.

Concept of Crossover point and its application on Threshold Voltage definition for Undoped-Body Transistors

As the conventional MOSFETs scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible andidate in terms of technology in sub-45nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body, is used to sustain the channel. There exits a disparity in threshold voltage calculation criteria of undoped-body symmetric double gate transistors which uses two definitions, one is potential based and the another is charge based definition. In this paper, a novel concept of "crossover point" is introduced, which proves that the charge-based definition is more accurate than the potential based definition. The change in threshold voltage with body thickness variation for a fixed channel length is anomalous as predicted by, potential based definition while it is monotonous for change based definition. The threshold voltage is then extracted from drain currant versus gate voltage characteristics using linear extrapolation and "Third Derivative of Drain-Source Current" method or simply "TD" method. The trend of threshold voltage variation is found some in both the cases which support charge-based definition.

Effects of tempered structure on the near threshold fatigue crack growth behavior of a coarse grained high strength steel

Near threshold fatigue crack growth behavior of a high strength steel under different temper levels was investigated. It is found that the observed variations in ΔKth could predominantly be attributed to roughness induced crack closure. The closure-free component of the threshold stress intensity range, ΔKeff,th showed a systematic variation with monotonic yield strength.

Justifying threshold voltage definition for undoped body transistors through ``crossover point'' concept

Two different definitions, one is potential based and the other is charge based, are used in the literatures to define the threshold voltage of undoped body symmetric double gate transistors. This paper, by introducing a novel concept of crossover point, proves that the charge based definition is more accurate than the potential based definition. It is shown that for a given channel length the potential based definition predicts anomalous change in threshold voltage with body thickness variation while the charge based definition results in monotonous change. The threshold voltage is then extracted from drain current versus gate voltage characteristics using linear extrapolation, transconductance and match-point methods. In all the three cases it is found that trend of threshold voltage variation support the charge based definition.

Testing threshold functions using implied minterm structure

A geometrical structure called the implied minterm structure (IMS) has been developed from the properties of minterms of a threshold function. The IMS is useful for the manual testing of linear separability of switching functions of up to six variables. This testing is done just by inspection of the plot of the function on the IMS.

The effect of crack closure on the grain size dependence of fatigue crack growth threshold

Recent studies (I-7) clearly indicate a strong dependence of fatigue threshold parameter, A K on grain size in several alloy systems. Attempts to explain these observations on the basis of crat~tortuosity (1,8), fracture surface roughness (5,9) and crack closure (6) appear to present a fairly clear picture of the mechanisms that cause a reduction in crack growth rates at threshold. In general, it has been shown that coarse grained microstructures exhibit higher fatigue threshold in low carbon steels (1,5) aluminium alloys (7) and titanium alloys (6). In spite of these observations, there exists (10-1#) considerable uncertainity about the manner in which the AK~L depends on prior austenitic grain size in quenched and tempered steels. Studies in quenched and tempered steels demonstrating both an increase (3,12,14) as well as a decrease (11,12) in AKth with an increase in prior austenitic grain size can be sought to illustrate this point. Occasionally , the absence of any sensitivity of AKth to the variations in prior austenitJc grain size has also been reported (11,13). While a few investigators (5-7) comfortably rationalised the grain size effects on AK~L on the basis of crack closure by a comparison in terms of the closure-free component of the thresho~Ifc~, AK -f such an approach has yet to be extended to high strength steels, An attempt has been made in t~et ,pthrg sent study to explai. n the effect of pri, or austeniti.c grain size on &Kth on the basis of crack closure measurements in a high strength steel.

An Adaptive Scheme for Learning the Probability Threshold in Pattern Recognition

The statistical minimum risk pattern recognition problem, when the classification costs are random variables of unknown statistics, is considered. Using medical diagnosis as a possible application, the problem of learning the optimal decision scheme is studied for a two-class twoaction case, as a first step. This reduces to the problem of learning the optimum threshold (for taking appropriate action) on the a posteriori probability of one class. A recursive procedure for updating an estimate of the threshold is proposed. The estimation procedure does not require the knowledge of actual class labels of the sample patterns in the design set. The adaptive scheme of using the present threshold estimate for taking action on the next sample is shown to converge, in probability, to the optimum. The results of a computer simulation study of three learning schemes demonstrate the theoretically predictable salient features of the adaptive scheme.

Threshold photoproduction of charged pions on14N

Pion photoproduction processes14Ngs(gamma, pgr +)14C and14Ngs(gamma, pgr –)14O have been studied in the threshold region. These processes provide an excellent tool to study the corrections to soft pion theorems and Kroll-Ruderman limit as applied to nuclear processes. The agreement with the available experimental data for these processes is better with the empirical wave functions while the shell-model wave functions predict a much higher value. Detailed experimental studies of these reactions at threshold, it is shown, are expected to lead to a better understanding of the shell-model inputs and radial distributions in the 1p state. We thank Dr. S.C.K. Nair for a helpful discussion during the initial stages of this work. One of us (MVN) thanks Dr. J.M. Laget for sending some unpublished data on pion photoproduction. He is also thankful to Dr. J. Pasupathy and Dr. R. Rajaraman for their interest and encouragement.

Karnaugh map analysis and synthesis of threshold functions

A unate function can easily be identified on a Karnaugh map from the well-known property that it cons ist s only ofess en ti al prime implicante which intersect at a common implicant. The additional property that the plot of a unate function F(x, ... XII) on a Karnaugh map should possess in order that F may also be Ivrealizable (n';:; 6) has been found. It has been sh own that the I- realizability of a unate function F corresponds to the ' compac tness' of the plot of F. No resort to tho inequalities is made, and no pre-processing such as positivizing and ordering of the given function is required.

Thermal anomalies in ternary Ge42-xPbxSe58 glasses near the charge carrier reversal threshold

The carrier type reversal (CTR) from p- to n-type in semiconducting chalcogenide glasses is an important and a long standing problem in glass science. Ge-Se glasses exhibit CTR when the metallic elements Bi and Pb are added. For example, bulk Ge42-xSe58Pbx glasses exhibit CTR around 8-9 at. % of Pb. These glasses have been prepared by melt quenching method. Glass transition temperature (T-g), Specific heat change between the liquid and the glassy states (Delta C-p) at T-g and the nonreversing heat flow (Delta H-nr) measured by modulated differential scanning calorimetry exhibit anomalies at 9 at. % of Pb. These observed anomalies are interpreted on the basis of the nano scale phase separation occurring in these glasses.

A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor

In this work, for the first time, we present a physically based analytical threshold voltage model for omega gate silicon nanowire transistor. This model is developed for long channel cylindrical body structure. The potential distribution at each and every point of the of the wire is derived with a closed form solution of two dimensional Poisson's equation, which is then used to model the threshold voltage. Proposed model can be treated as a generalized model, which is valid for both surround gate and semi-surround gate cylindrical transistors. The accuracy of proposed model is verified for different device geometry against the results obtained from three dimensional numerical device simulators and close agreement is observed.