Processing of Ultrasonic Signal for Transducer Characterization and for Improving Signal-To-Noise Ratio

This paper describes the work related to characterisation of an ultrasonic transducer fabricated in the laboratory. The response of the medium to the ultrasonic wave was obtained by converting the time domain signal to frequency domain, using the FFT algorithm. Cross-correlation technique was adopted to increase the S/N ratio in the raw time domain signal and subsequently, to determine the ultrasonic velocity in the medium.

Probing Single and Bilayer Graphene Field Effect Transistors By Raman Spectroscopy

This article is a review of our work related to Raman studies of single layer and bilayer graphenes as a function Fermi level shift achieved by electrochemically top gating a field effect transistor. Combining the transport and in situ Raman studies of the field effect devices, a quantitative understanding is obtained of the phonon renormalization due to doping of graphene. Results are discussed in the light of time dependent perturbation theory, with electron phonon coupling parameter as an input from the density functional theory. It is seen that phonons near and Gamma and K points of the Brillouin zone are renormalized very differently by doping. Further, Gamma-phonon renormalization is different in bilayer graphene as compared to single layer, originating from their different electronic band structures near the zone boundary K-point. Thus Raman spectroscopy is not only a powerful probe to characterize the number of layers and their quality in a graphene sample, but also to quantitatively evaluate electron phonon coupling required to understand the performance of graphene devices.