6 resultados para WAVE-GUIDE SWITCH

em Indian Institute of Science - Bangalore - Índia


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Theoretical study of propagation characteristics of VLF electromagnetic waves through an idealised parallel-plane earth-crust waveguide with overburden, experimental verification of some of these characteristics with the aid of a model tank and use of range equation reveal the superiority of radio communication between land and a deeply submerged terminal inside a ocean via the earth-crust over direct link communication through the ocean.

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Consideration is given to a 25-foot long Q-band (8 mm) confocal, zoned dielectric lens beam waveguide. Numerical expressions for the axial and radial fields are presented. The experimental set-up consisted of uniformly spaced zoned dielectric lenses, a transmitting horn and a receiving horn. It was found that: (1) the wave beam is reiterated when confocal, zoned dielectric lenses act as phase transformers in place of smooth surfaced transformers in beam waveguides; (2) the axial field is oscillatory near the source and the oscillation persists for about 25 cm from the source; (3) the oscillation disappears after one lens is used; (4) higher order modes with higher attenuation rates die out faster than fundamental modes; (5) phase transformers do not alter beam modes; (6) without any lens the beam cross-section broadens significantly in the Z-direction; (7) with one lens the beam exhibits the reiteration phenomenon; and (8) inserting a second lens on the axial and cross-sectional field distribution shows further the reiteration principle.

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An analytical investigation of the transverse shear wave mode tuning with a resonator mass (packing mass) on a Lead Zirconium Titanate (PZT) crystal bonded together with a host plate and its equivalent electric circuit parameters are presented. The energy transfer into the structure for this type of wave modes are much higher in this new design. The novelty of the approach here is the tuning of a single wave mode in the thickness direction using a resonator mass. First, a one-dimensional constitutive model assuming the strain induced only in the thickness direction is considered. As the input voltage is applied to the PZT crystal in the thickness direction, the transverse normal stress distribution induced into the plate is assumed to have parabolic distribution, which is presumed as a function of the geometries of the PZT crystal, packing mass, substrate and the wave penetration depth of the generated wave. For the PZT crystal, the harmonic wave guide solution is assumed for the mechanical displacement and electric fields, while for the packing mass, the former is solved using the boundary conditions. The electromechanical characteristics in terms of the stress transfer, mechanical impedance, electrical displacement, velocity and electric field are analyzed. The analytical solutions for the aforementioned entities are presented on the basis of varying the thickness of the PZT crystal and the packing mass. The results show that for a 25% increase in the thickness of the PZT crystal, there is ~38% decrease in the first resonant frequency, while for the same change in the thickness of the packing mass, the decrease in the resonant frequency is observed as ~35%. Most importantly the tuning of the generated wave can be accomplished with the packing mass at lower frequencies easily. To the end, an equivalent electric circuit, for tuning the transverse shear wave mode is analyzed.

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Iron encapsulated carbon nanoparticle polyvinyl chloride composite films have been prepared by solvent mixing and drying method. The films were characterized by scanning electron microscope (SEM) and high resolution transmission electron microscope (HRTEM). A 5 nm thin graphitic carbon coating is observed on cubic Fe nanoparticles. The microwave absorption studies by wave guide technique in the Ka band range showed highest electromagnetic interference shielding efficiency of 18dB on a 300 micron thick film. The shielding efficiency depends on weight % of the filler in the composite. The data obtained for different films indicate that these lightweight materials are good candidates for potential electromagnetic interference shielding applications.

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In order to protect the critical electronic equipment/system against damped sine transient currents induced into its cables due to transient electromagnetic fields, switching phenomena, platform resonances, etc. it is necessary to provide proper hardening. The hardness assurance provided can be evaluated as per the test CS 116 of MIL STD 461E/F in laboratory by generating & inducing the necessary damped sine currents into the cables of the Equipment Under Test (EUT). The need and the stringent requirements for building a damped sine wave current generator for generation of damped sine current transients of very high frequencies (30 MHz & 100 MHz) have been presented. A method using LC discharge for the generation has been considered in the development. This involves building of extremely low & nearly loss less inductors (about 5 nH & 14 nH) as well as a capacitor & a switch with much lower inductances. A technique for achieving this has been described. Two units (I No for 30 MHz. & 100 MHz each) have been built. Experiments to verify the output are being conducted.

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Piezoelectric-device-based vibration energy harvesting requires a rectifier for conversion of input ac to usable dc form. Power loss due to diode drop in rectifier is a significant fraction of the already low levels of harvested power. The proposed circuit is a low-drop-diode equivalent, which mimics a diode using linear region-operated MOSFET. The proposed diode equivalent is powered directly from input signal and requires no additional power supply for its control. Power used by the control circuit is kept at a bare minimum to have an overall output power improvement. Diode equivalent was used to replace the four diodes in a full-wave bridge rectifier, which is the basic full- wave rectifier and is a part of the more advanced rectifiers like switch-only and bias-flip rectifiers. Simulation in 130-nm technology and experiment with discrete components show that a bridge rectifier with the proposed diode provides a 30-169% increase in output power extracted from piezoelectric device, as compared to a bridge rectifier with diode-connected MOSFETs. The bridge rectifier with the proposed diode can extract 90% of the maximum available power from an ideal piezoelectric device-bridge rectifier circuit. Setting aside the constraint of power loss, simulations indicate that diode drop as low as 10 mV at 38 mu A can be achieved.