Efficient Key Management and Distribution for MANET

Ad hoc networks are being used in applications ranging from disaster recovery to distributed collaborative entertainment applications. Ad hoc networks have become one of the most attractive solution for rapid deployment of interconnecting large number of mobile personal devices. The user community of mobile personal devices are demanding a variety of value added multimedia entertainment services. The popularity of peer group is increasing and one or some members of the peer group need to send data to some or all members of the peer group. The increasing demand for group oriented value added services is driving for efficient multicast service over ad hoc networks. Access control mechanisms need to be deployed to provide guarantee that the unauthorized users cannot access the multicast content. In this paper, we present a topology aware key management and distribution scheme for secure overlay multicast over MANET to address node mobility related issues for multicast key management. We use overlay approach for key distribution and our objective is to keep communication overhead low for key management and distribution. We also incorporate reliability using explicit acknowledgments with the key distribution scheme. Through simulations we show that the proposed key management scheme has low communication overhead for rekeying and improves the reliability of key distribution.

Thermoelectric properties of Bi-added Co4Sb12 skutterudites

Void filling in (I) Bi-x-added Co4Sb12 or (II) Sb/Bi substitution of Co4Sb12-xBix has been investigated for structural and thermoelectric properties evaluation. X-ray powder data Rietveld refinements combined with electron probe microanalyses showed a polycrystalline and practically Bi-free CoSb3 skutterudite phase as the major constituent as well as a secondary Bi phase in the grain boundaries. For series I alloys, the electrical conductivity, Seebeck coefficient and thermal conductivity were measured as a function of temperature in the range from 450 to 750 K. The electrical conductivity of all the samples increased with increasing temperature, showing a semiconducting nature with smaller values of the Seebeck coefficient for higher Bi fractions. Conduction over the entire temperature range was found to arise from a single p-type carrier. Thermal conductivity showed a reduction with Bi added in all the samples, except for Bi0.75Co4Sb12, and the lowest lattice thermal conductivity was found for a Bi-added fraction of 0.5. The maximum zT value of 0.53 at 632 K is higher than that of Co4Sb12.