Energy use in Indian household sector - An actor-oriented approach

Over the years, significant changes have taken place with regard to the type as well the quantity of energy used in Indian households. Many factors have contributed in bringing these changes. These include availability of energy, security of supplies, efficiency of use, cost of device, price of energy carriers, ease of use, and external factors like technological development, introduction of subsidies, and environmental considerations. The present paper presents the pattern of energy consumption in the household sector and analyses the causalities underlying the present usage patterns. It identifies specific (groups of) actors, study their specific situations, analyse the constraints and discusses opportunities for improvement. This can be referred to ``actor-oriented'' analysis in which we understand how various actors of the energy system are making the system work, and what incentives and constraints each of these actors is experiencing. It analyses actor linkages and their impact on the fuel choice mechanism. The study shows that the role of actors in household fuel choice is significant and depends on the level of factors - micro, meso and macro. It is recommended that the development interventions should include actor-oriented tools in energy planning, implementation, monitoring and evaluation. The analysis is based on the data from the national sample survey (NSS), India. This approach provides a spatial viewpoint which permits a clear assessment of the energy carrier choice by the households and the influence of various actors. The scope of the paper is motivated and limited by suggesting and formulating a powerful analytical technique to analyse the problem involving the role of actors in the Indian household sector.

Local texture and microstructure in cube-oriented nickel single crystal deformed by equal channel angular extrusion

Local texture and microstructure was investigated to study the deformation mechanisms during equal channel angular extrusion of a high purity nickel single crystal of initial cube orientation. A detailed texture and microstructure analysis by various diffraction techniques revealed the complexity of the deformation patterns in different locations of the billet. A modeling approach, taking into account slip system activity, was used to interpret the development of this heterogeneous deformation.

On pattern oriented software architecture for the grid

Precision, sophistication and economic factors in many areas of scientific research that demand very high magnitude of compute power is the order of the day. Thus advance research in the area of high performance computing is getting inevitable. The basic principle of sharing and collaborative work by geographically separated computers is known by several names such as metacomputing, scalable computing, cluster computing, internet computing and this has today metamorphosed into a new term known as grid computing. This paper gives an overview of grid computing and compares various grid architectures. We show the role that patterns can play in architecting complex systems, and provide a very pragmatic reference to a set of well-engineered patterns that the practicing developer can apply to crafting his or her own specific applications. We are not aware of pattern-oriented approach being applied to develop and deploy a grid. There are many grid frameworks that are built or are in the process of being functional. All these grids differ in some functionality or the other, though the basic principle over which the grids are built is the same. Despite this there are no standard requirements listed for building a grid. The grid being a very complex system, it is mandatory to have a standard Software Architecture Specification (SAS). We attempt to develop the same for use by any grid user or developer. Specifically, we analyze the grid using an object oriented approach and presenting the architecture using UML. This paper will propose the usage of patterns at all levels (analysis. design and architectural) of the grid development.

Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

Understanding and controlling growth stress is a requisite for integrating oxides with Si. Yttria stabilized zirconia (YSZ) is both an important functional oxide and a buffer layer material needed for integrating other functional oxides. Stress evolution during the growth of (100) and (111) oriented YSZ on Si (100) by radio frequency and reactive direct current sputtering has been investigated with an in-situ monitor and correlated with texture evolution. Films nucleated at rates <5 nm/min are found to be (111) oriented and grow predominantly under a compressive steady state stress. Films nucleated at rates >20 nm/min are found to be (100) oriented and grow under tension. A change in growth rate following the nucleation stage does not change the orientation. The value of the final steady state stress varies from -4.7 GPa to 0.3 GPa. The in-situ studies show that the steady state stress generation is a dynamic phenomenon occurring at the growth surface and not decided at film nucleation. The combination of stress evolution and texture evolution data shows that the adatom injection into the grain boundaries is the predominant source of compressive stress and grain boundary formation at the growth surface is the source of tensile stress. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4757924]

Device oriented statistical modeling method for process variability in 45nm analog CMOS technology

With the rapid scaling down of the semiconductor process technology, the process variation aware circuit design has become essential today. Several statistical models have been proposed to deal with the process variation. We propose an accurate BSIM model for handling variability in 45nm CMOS technology. The MOSFET is designed to meet the specification of low standby power technology of International Technology Roadmap for Semiconductors (ITRS).The process parameters variation of annealing temperature, oxide thickness, halo dose and title angle of halo implant are considered for the model development. One parameter variation at a time is considered for developing the model. The model validation is done by performance matching with device simulation results and reported error is less than 10%.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.