Protection and Switching-Aid Networks for Transistor Bridge Inverters

The present trend in the industry is towards the use of power transistors in the development of efficient Pulsewidth Modulated (PWM) inverters, because of their operation at high frequency, simplicity of turn-off, and low commutation losses compared to the technology using thyristors. But the protection of power transistors, minimization of switching power loss, and design of base drive circuit are very important for a reliable operation of the system. The requirements, analysis, and a simplified procedure for calculation of the switching-aid network components are presented. The transistor is protected against short circuit using a modified autoregulated and autoprotection drive circuit. The experimental results show that the switching power loss and voltage stress in the device can be reduced by suitable choice of the switching-aid network component values.

Experimental characterisation and performance evaluation of a coaxial current transformer for measurement of insulated gate bipolar transistor switching current

Measurement of device current during switching characterisation of an insulated gate bipolar transistor (IGBT) requires a current sensor with low insertion impedance and high bandwidth. This study presents an experimental procedure for evaluating the performance of a coaxial current transformer (CCT), designed for the above purpose. A prototype CCT, which can be mounted directly on a power terminal of a 1200 V/50 A half-bridge IGBT module, is characterised experimentally. The measured characteristics include insertion impedance, gain and phase of the CCT at different frequencies. The bounds of linearity within which the CCT can operate without saturation are determined theoretically, and are also verified experimentally. The experimental study on linearity of the CCT requires a high-amplitude current source. A proportional-resonant (PR) controller-based current-controlled half-bridge inverter is developed for this purpose. A systematic procedure for selection of PR controller parameters is also reported in this study. This set-up is helpful to determine the limit of linearity and also to measure the frequency response of the CCT at realistic amplitudes of current in the low-frequency range.

Measurement of IGBT switching characteristics and loss using coaxial current transformer

Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out on a 50A, 1200V IGBT (SKM50GB123D) for different values of gate resistance, device current and junction temperature. These measurements augment the technical data available in the device datasheet.Short circuit transients are also investigated experimentally under hard switched fault as well as fault under load conditions.

Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor

A new physically based classical continuous potential distribution model, particularly considering the channel center, is proposed for a short-channel undoped body symmetrical double-gate transistor. It involves a novel technique for solving the 2-D nonlinear Poisson's equation in a rectangular coordinate system, which makes the model valid from weak to strong inversion regimes and from the channel center to the surface. We demonstrated, using the proposed model, that the channel potential versus gate voltage characteristics for the devices having equal channel lengths but different thicknesses pass through a single common point (termed ``crossover point''). Based on the potential model, a new compact model for the subthreshold swing is formulated. It is shown that for the devices having very high short-channel effects (SCE), the effective subthreshold slope factor is mainly dictated by the potential close to the channel center rather than the surface. SCEs and drain-induced barrier lowering are also assessed using the proposed model and validated against a professional numerical device simulator.

Effect of antimony addition on the thermal and electrical-switching behavior of bulk Se-Te glasses

The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe45 (2 <= x <= 9) glasses have been investigated by alternating differential scanning calorimetry and electrical-switching experiments, respectively. The addition of Sb is found to enhance the glass forming tendency and stability as revealed by the decrease in non-reversing enthalpy Delta H-nr. and an increase in the glass-transition width Delta T-g. Further, the glass-transition temperature of SbxSe55-xTe45 glasses, which is a measure of network connectivity, exhibits a subtle increase, suggesting a meager network growth with the addition of Sb. The crystallization temperature is also observed to increase with Sb content. The SbxSe55-xTe45 glasses (2 <= x <= 9) are found to exhibit memory type of electrical switching, which can be attributed to the polymeric nature of network and high devitrifying ability. The metallicity factor has been found to dominate over the network connectivity and rigidity in the compositional dependence of switching voltage. which shows a profound decrease with the addition of Sb.

A DC-link Capacitor Voltage Balancing with CMV Elimination using only the Switching State Redundancies for a Reduced Switch Count Multi-Level Inverter fed IM Drive

Common mode voltage (CMV) variations in PWM inverter-fed drives generate unwanted shaft and bearing current resulting in early motor failure. Multilevel inverters reduce this problem to some extent, with higher number of levels. But the complexity of the power circuit increases with an increase in the number of inverter voltage levels. In this paper a five-level inverter structure is proposed for open-end winding induction motor (IM) drives, by cascading only two conventional two-level and three-level inverters, with the elimination of the common mode voltage over the entire modulation range. The DC link power supply requirement is also optimized by means of DC link capacitor voltage balancing, with PWM control., using only inverter switching state redundancies. The proposed power circuit gives a simple power bits structure.

Future switching technology: bacterial protein-based programmable all-optical switch for integrated optics applications?

We report on the bacterial protein-based all-optical switches which operate at low laser power, high speed and fulfil most of the requirements to be an ideal all-optical switch without any moving parts involved. This consists of conventional optical waveguides coated with bacteriorhodopsin films at switching locations. The principle of operation of the switch is based on the light-induced refractive index change of bacteriorhodopsin. This approach opens the possibility of realizing proteinbased all-optical switches for communication network, integrated optics and optical computers.

Nonlinear conduction and electrical switching in one-dimensional conductors

Many one-dimensional conductors show pronounced nonlinear electrical conduction. Some of them show very interesting electrical switching from a low conducting state to a high conducting state. Such electrical switching is often associated with memory. These are discussed with particular emphasis on charge transfer complexestmbine-tcnq, tmpd-tcnq, Cs2(tcnq)3,tea-(tcnq) 2 ando-tolidine-iodine.

Complexity Reduction In A Telephone Switching-System

This paper review the some of the recent developments in Complexity theory as applied to telephone-switching. Some of these techniques are suitable for practical implementation in India.

An apparatus for the study of switching characteristics in ferroelectrics

A circuit capable of producing bipolar square pulses of voltages up to +or-400 V, employing an integrated circuit timer and two mercury wetted relays is described. The frequency of the pulses can be varied from a cycle min-1 to 2 kHz. A variable temperature sample chamber and the temperature control and measurement circuits are also described. The performance of the circuit is evaluated using samples of TGS and NaNO2.

Switching Process in Ferroelectric Triglycine Selenate

Triglycine selenate (TGSe) is isomorphous with Triglycine sulphate and is ferroelectric below 22°C. It is interesting to study the switching process in TGSe in the ferro-state with a view to comparing the results with TSG. The switching process was studied by applying electrical square pulses to produce fields up to 5 kV/cm on the sample, and measuring the parameters characterizing the transient current flowing in the sample, according to the Merz method. The temperature range in which the process was studied was 15°C to -20°C. The results were analysed by applying the Pulvari-Kuebler theory and the parameters α the activation field and µ the mobility of the domains were evaluated. It is found that µ varies with temperature in TGSe in a manner similar to TGS. µ is lesser for TGSe than for TGS for the same shift of temperature from Tc. The switching behaviour of γ-irradiated TGSe is qualitatively similar to that of unirradiated crystal eventhougth the process gets slowed down as a result of irradiation.

Switching transients in ferroelectric dicalcium strontium propionate (DSP) and azoxybenzene

The switching transients in dicalcium strontium propionate and azoxybenzene were studied by the use of the Merz method. It was observed that the switching time depends linearly on the applied electric field. Under similar electric fields, the switching processes in DSP and azoxybenzene are slower than in triglycine sulphate (TGS) at 27°C.

The formation of a p-n junction in a polymer electrolyte top-gated bilayer graphene transistor

We show simultaneous p- and n-type carrier injection in a bilayer graphene channel by varying the longitudinal bias across the channel and the top-gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is measured to be 1.5 microF cm(-2), a value about 125 times higher than the conventional SiO(2) back-gate capacitance. Unlike the single-layer graphene, the drain-source current does not saturate on varying the drain-source bias voltage. The energy gap opened between the valence and conduction bands using top- and back-gate geometry is estimated.

Switching transients in ferroelectric dicalcium strontium propionate (DSP) and Azoxybenzene

The ferroelectric polarization switching was studied in DSP single crystal and Azoxybenzene liquid film using the method described by Merz (1954). The DSP single crystal samples were in the form of plates 0.5 mm - 1.0 mm thick. The Azoxybenzene liquid film samples had a thickness from 0.025 mm - 0.125 mm. Switching in DSP was observed in the temperature range +7°C to -30°C, while in Azoxybenzene it was observed from 30°C to 70°C.

Non-ohmic conduction and electrical switching under pressure of the charge transfer complexo-tolidine-iodine

The current voltage characteristics ofo-tolidine-iodine, with stoichiometry 1:1 grown from benzene, have been studied under high pressures upto 6 GPa atT=300 K andT=77 K. The characteristics show a pronounced deviation from ohmicity beyond a certain current for all pressures studied. At room temperature, beyond a threshold field the system switches from a low conductingOFF state to a high conductingON state with σON/σOFF ∼ 103. TheOFF state can be restored by the application of an a.c. pulse of low frequency. The temperature dependence of the two states studied indicates that theOFF state is semiconducting while theON state, beyond a certain applied pressure is metallic. The characteristics atT=77 K do not show any switching.