The mobility of oxygen ions in CaF2

The a.c. conductivity of CaF2 samples containing a fine dispersion of CaO particles has been measured in the temperature range 630 to 1100 K. The conductivity of the dispersed solid electrolyte is two orders of magnitude higher than that for pure polycrystalline CaF2 in the middle of the temperature range. Transport measurements on pure single crystals of CaF2 and polycrystalline samples, with and without CaO dispersion, using Fe+FeO and pure Fe as electrodes, clearly indicate that fluorine ions are the only migrating ionic species with a transport number of almost unity, contrary to the suggestion of Chou and Rapp [1, 2]. The enhanced conductivity of the dispersed solid electrolyte probably arises from two effects. A small solubility of oxygen in CaF2 results in an increase in the fluorine vacancy concentration and conductivity. Adsorption of fluorine ions on the surface of the dispersed particles of CaO results in a space charge region around each particle with enhanced conductivity. Measurements on a galvanic cell incorporating CaF2 as the solid electrolyte and oxide electrodes show that the e.m.f. is a function of the activity of CaO at the electrode/electrolyte interface. The response to an oxygen potential gradient is, therefore, through an exchange reaction, which establishes an equivalent fluorine potential at the electrode/electrolyte interface.

Gibbs energy of formation of nickel orthosilicate (Ni2SiO4)

Two solid state galvanic cells:Pt, Ni + Ni2Si04 + Si02/(Y203)Zr02/Ni + + NiO, Pt (1) and Pt, Ni + NizSiOj + Si02/CaF2/Ni + + NiO, Pt (11) have been employed for the determination of the Gibbs' energy of formation of nickel orthosilicate(Ni2Si04) from nickel oxide and quartz. The emf of cell (I) was reversible and reproducible in the temperature range 925 to 1375K whereas emf of cell (11) drifted with time and changed polarity. From the results of cell (I), the Gibbs' energy of formation of nickel silicate is obtained as,2Ni0 (r.s.) + Si02 (quartz) + Ni2Si04 (olivine)Gibbs' energy of formation of the spinel form of Ni2Si04 is obtained by combining the data for olivine obtained in this study with high pressure data on olivine to spinel transition reported in the literature. The complex time dependence of the emf of cell (11) can be rationalised on the basis of formation of calcium silicates from calcium oxide, generally present as an impurity in the calcium fluoride electrolyte, and silica. The emf of cell (11) is shown to be the function of the activity of calcium oxide at the electrolyte/ electrode interface. The results provide strong evidence against the recent suggestion of mixed anionic conduction in calcium fluoride.

Vermicompost reduces the invasiveness of the earthworm species Dichogaster bolaui compared to the use of compost in a degraded tropical soil in Northern Vietnam

In Northern Vietnam, organic fertilization programmes are being tested to restore soil fertility and reduce soil erosion. However, the amendment of organic matter in soil is also associated with the development of the invasive earthworm species Dichogaster bolaui. The objective of this study was to investigate the influence of organic matter amendment quality (compost vs. vermicompost) on D. bolaui. Our study confirmed D. bolaui development in organic patches in the field. However, we also observed that the flat-backed millipede Asiomorpha coarctata proliferated in these organic patches. Native to Asia, this millipede species is also considered as invasive in America. Both D. bolaui and A. coarctata more rapidly colonized compost than vermicompost patches. A laboratory experiment confirmed this trend and showed the limited development of D. bolaui in vermicompost. This is probably because of the decreased palatability of this substrate to soil fauna. In conclusion, any restoration practice that aims to increase the organic stocks in soils degraded by erosion should consider the quality of the organic amendment. In Northern Vietnam, vermicompost may be the preferred substrate for restoring soils while limiting the spread of D. bolaui. (C) 2014 Elsevier Masson SAS. All rights reserved.

BCS-BEC crossover induced by a synthetic non-Abelian gauge field

We investigate the ground state of interacting spin-1/2 fermions in three dimensions at a finite density (rho similar to k(F)(3)) in the presence of a uniform non-Abelian gauge field. The gauge-field configuration (GFC) described by a vector lambda equivalent to (lambda(x),lambda(y),lambda(z)), whose magnitude lambda determines the gauge coupling strength, generates a generalized Rashba spin-orbit interaction. For a weak attractive interaction in the singlet channel described by a small negative scattering length (k(F)vertical bar a(s)vertical bar less than or similar to 1), the ground state in the absence of the gauge field (lambda = 0) is a BCS (Bardeen-Cooper-Schrieffer) superfluid with large overlapping pairs. With increasing gauge-coupling strength, a non-Abelian gauge field engenders a crossover of this BCS ground state to a BEC (Bose-Einstein condensate) of bosons even with a weak attractive interaction that fails to produce a two-body bound state in free vacuum (lambda = 0). For large gauge couplings (lambda/k(F) >> 1), the BEC attained is a condensate of bosons whose properties are solely determined by the Rashba gauge field (and not by the scattering length so long as it is nonzero)-we call these bosons ``rashbons.'' In the absence of interactions (a(s) = 0(-)), the shape of the Fermi surface of the system undergoes a topological transition at a critical gauge coupling lambda(T). For high-symmetry GFCs we show that the crossover from the BCS superfluid to the rashbon BEC occurs in the regime of lambda near lambda(T). In the context of cold atomic systems, these results make an interesting suggestion of obtaining BCS-BEC crossover through a route other than tuning the interaction between the fermions.

Einstein Relation in n-Channel Inversion Layers of Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory, Relative Comparison and Suggestion for an Experimental Determination

In this paper, we study the Einstein relation for the diffusivity to mobility ratio (DMR) in n-channel inversion layers of non-linear optical materials on the basis of a newly formulated electron dispersion relation by considering their special properties within the frame work of k.p formalism. The results for the n-channel inversion layers of III-V, ternary and quaternary materials form a special case of our generalized analysis. The DMR for n-channel inversion layers of II-VI, IV-VI and stressed materials has been investigated by formulating the respective 2D electron dispersion laws. It has been found, taking n-channel inversion layers of CdGeAs2, Cd(3)AS(2), InAs, InSb, Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS, PbTe, PbSnTe, Pb1-xSnxSe and stressed InSb as examples, that the DMR increases with the increasing surface electric field with different numerical values and the nature of the variations are totally band structure dependent. The well-known expression of the DMR for wide gap materials has been obtained as a special case under certain limiting conditions and this compatibility is an indirect test for our generalized formalism. Besides, an experimental method of determining the 2D DMR for n-channel inversion layers having arbitrary dispersion laws has been suggested.

Influence of crossed electric and quantizing magnetic fields on the Einstein relation in nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestion for experimental determination

An attempt is made to study the Einstein relation for the diffusivity-to-mobility ratio (DMR) under crossed fields' configuration in nonlinear optical materials on the basis of a newly formulated electron dispersion law by incorporating the crystal field in the Hamiltonian and including the anisotropies of the effective electron mass and the spin-orbit splitting constants within the framework of kp formalisms. The corresponding results for III-V, ternary and quaternary compounds form a special case of our generalized analysis. The DMR has also been investigated for II-VI and stressed materials on the basis of various appropriate dispersion relations. We have considered n-CdGeAs2, n-Hg1-xCdxTe, n-In1-xGaxAsyP1-y lattice matched to InP, p-CdS and stressed n-InSb materials as examples. The DMR also increases with increasing electric field and the natures of oscillations are totally band structure dependent with different numerical values. It has been observed that the DMR exhibits oscillatory dependences with inverse quantizing magnetic field and carrier degeneracy due to the Subhnikov-de Haas effect. An experimental method of determining the DMR for degenerate materials in the present case has been suggested. (C) 2010 Elsevier B.V. All rights reserved.