Design of a high sensitivity FET integrated MEMS microphone

FET based MEMS microphones comprise of a flexible diaphragm that works as the moving gate of the transistor. The integrated electromechanical transducer can be made more sensitive to external sound pressure either by increasing the mechanical or the electrical sensitivities. We propose a method of increasing the overall sensitivity of the microphone by increasing its electrical sensitivity. The proposed microphone uses the transistor biased in the sub-threshold region where the drain current depends exponentially on the difference between the gate-to-source voltage and the threshold voltage. The device is made more sensitive without adding any complexity in the mechanical design of the diaphragm.