Topochemically controlled hydrogen reduction of scheelite-related rare-earth metal molybdates

Scheelite-related -Ln2Mo3O12(Ln = La, Pr, Nd, Sm, Gd, Tb, or Dy) oxides are reduced by hydrogen at 780–870 K yielding molybdenum (IV) oxides of formula Ln2Mo3O9. The latter crystallize in a tetragonal scheelite (ABO4) type structure where one third of the A sites and a quarter of the anion sites are vacant: Ln2/3(cat)1/3MoO3(an). The reaction Ln2Mo3O12+ 3H2 Ln2Mo3O9(an)3+ 3H2O may be regarded as topochemically controlled, since both the parent and the product phases have scheelite-related structures. Infrared spectra and electrical and magnetic properties of these metastable defect scheelite phases are reported.

Studies in crystal engineering: structure�reactivity correlations of substituted styrylcoumarins and related systems

The solid state photochemical behaviour of 7-hydroxy-4-styrylcoumarin 1 and several of its derivatives and analogues has been investigated. All the compounds with the exception of 7-methoxy-4-styrylcoumarin 2 are photolabile and yield anti-HT dimers. It has been observed that chloro substitution in the systems studied does not lead to the expected beta-packing mode. The photobehaviour of 1 and 2 has been correlated with their crystal structures. Reasons for alpha-packing have been examined. The systematics in the arrangement of the carbonyl group and phenyl group of the close neighbours in the crystals of 1, 2 and a few other cases are presented.

Aza-heterocyclic ligand assisted assembly of new cobalt MOFs with pcu and graphite related structures

A hydrothermal reaction of a mixture of cobalt salt, 5-nitro isophthalic acid and triazole (compound I), 3-aminotriazole (3-AT) (compound II) and 3,5-diaminotriazole (compound III) at 220 degrees C for a day resulted in the isolation of three different, but related, compounds containing cobalt clusters. The three-dimensional compounds have Co-5 (compound-I) and Co-4 (compound-II and compound-III) clusters connected through the carboxylate and triazolate forming structures with pcu net (compound-I and compound-II) and a graphite-related net (compound-III). The water molecules (coordinated and lattice) can be readily re-adsorbed by the structure of compound-I, whereas the removal of the water molecule leads to a collapse of the structures of compound-II and compound-III. The TGA studies suggest the possibility of an intermediate structure for compound-1, which was investigated using in situ single crystal to single crystal (SCSC) transformations. The identification of an intermediate structure during the dehydration/hydration cycle in compound-I is important and provides important pointers about the dynamics of the water molecules in these compounds. Compound-I was also investigated in detail using a variety of spectroscopic techniques such as IR, UV-Vis spectroscopy etc. Magnetic studies on the synthesized compounds indicate anti-ferromagnetic behavior.

Ordering transformation in icosahedral quasicrystals and related crystalline phases

Arcs of diffuse intensity appear in various shapes and positions in the diffraction patterns from the icosahedral phase, violating the parity rule for simple icosahedral (SI) symmetry. In the process of annealing treatment, the diffuse spots also evolve in the centre of the arcs and become sharp. These extra diffuse spots change the symmetry of the quasilattice from P-type to F-type. The ordered and disordered structures in quasicrystal have been linked to the ordered and disordered structures present in the crystalline alpha (Al-Mn-Si) and alpha (Al-Fe-Si) alloys.

Giant Magnetoresistance and Related Properties of Rare Earth Manganates and Other Oxide Systems

Giant magnetoresistance (GMR), which was until recently confined to magnetic layered and granular materials, as well as doped magnetic semiconductors, occurs in manganate perovskites of the general formula Ln(1-x)A(x)MnO(3) (Ln = rare earth; A = divalent ion). These manganates are ferromagnetic at or above a certain value of x (or Mn4+ content) and become metallic at temperatures below the curie temperature, T-c. GMR is generally a maximum close to T-c or the insulator-metal (I-M) transition temperature, T-im. The T-c and %MR are markedly affected by the size of the A site cation, [r(A)], thereby affording a useful electronic phase diagram when T-c or T-im is plotted against [r(A)]. We discuss GMR and related properties of manganates in polycrystalline, thin-film, and single-crystal forms and point out certain commonalities and correlations. We also examine some unusual features in the electron-transport properties of manganates, in particular charge-ordering effects. Charge ordering is crucially dependent on [r(A)] or the e(g) band width, and the charge-ordered insulating state transforms to a metallic ferromagnetic state on the application of a magnetic field.

Thermopower and nature of the hole-doped states in LaMnO3 and related systems showing giant magnetoresistance

We have measured the thermopower (S) of hole-doped LaMnO3 systems in order to see its dependence on the Mn4+ content as well as to investigate other crucial factors that determine S. We have carried out hole doping (creation of Mn4+ by two distinct means, namely, by the substitution of La by divalent cations such as Ca and Sr and by self-doping without aliovalent substitution). The thermopower is sensitive not only to the hole concentration but also to the process employed for hole doping, which we explain as arising from the differences in the nature of the hole-doped states. We also point out a general trend in the dependence of S on hole concentration at high temperatures (T> T-c), similar to that found in the normal-state thermopower of the cuprates.

Einstein Relation in n-Channel Inversion Layers of Nonlinear Optical, Optoelectronic and Related Materials: Simplified Theory, Relative Comparison and Suggestion for an Experimental Determination

In this paper, we study the Einstein relation for the diffusivity to mobility ratio (DMR) in n-channel inversion layers of non-linear optical materials on the basis of a newly formulated electron dispersion relation by considering their special properties within the frame work of k.p formalism. The results for the n-channel inversion layers of III-V, ternary and quaternary materials form a special case of our generalized analysis. The DMR for n-channel inversion layers of II-VI, IV-VI and stressed materials has been investigated by formulating the respective 2D electron dispersion laws. It has been found, taking n-channel inversion layers of CdGeAs2, Cd(3)AS(2), InAs, InSb, Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS, PbTe, PbSnTe, Pb1-xSnxSe and stressed InSb as examples, that the DMR increases with the increasing surface electric field with different numerical values and the nature of the variations are totally band structure dependent. The well-known expression of the DMR for wide gap materials has been obtained as a special case under certain limiting conditions and this compatibility is an indirect test for our generalized formalism. Besides, an experimental method of determining the 2D DMR for n-channel inversion layers having arbitrary dispersion laws has been suggested.

Certain Aspects Related To Computation By Modified Crack Closure Integral(MCCI)

This paper presents the proper computational approach for the estimation of strain energy release rates by modified crack closure integral (MCCI). In particular, in the estimation of consistent nodal force vectors used in the MCCI expressions for quarter-point singular elements (wherein all the nodal force vectors participate in computation of strain energy release rates by MCCI). The numerical example of a centre crack tension specimen under uniform loading is presented to illustrate the approach.

Identification of the nature of platinum related midgap state in silicon by deep level transient spectroscopy

In this article, we present the detailed investigations on platinum related midgap state corresponding to E-c -0.52 eV probed by deep level transient spectroscopy. By irradiating the platinum doped samples with high-energy (1.1 MeV) gamma rays, we observed that the concentration of the midgap state increases and follows a square dependence with irradiation dose. However, the concentration of the acceptor corresponding to E-c -20.28 eV remained constant. Furthermore, from the studies on passivation by atomic hydrogen and thermal reactivation, we noticed that the E-c -0.52 eV level reappears in the samples annealed at high temperatures after hydrogenation. The interaction of platinum with various defects and the qualitative arguments based on the law of mass action suggest that the platinum related midgap defect might possibly correspond to the interstitial platinum-divacancy complex (V-Pt-V).

The first observation of a Na2TiS2 related structure in a 2-D anionic manganese trimesate intercalated by cationic imidazole

A hydrothermal reaction of Mn(OAc)2·4H2O, trimesic acid, imidazole, KOH and water at 75 °C for 24 h gave rise to a 2-D compound, [HImd][Mn(BTC)(H2O)] (Imd = imidazole; BTC = trimesate), with protonated imidazole molecules occupying the inter-lamellar space, and the structure resembles the classic inorganic compound, the sodium intercalated TiS2 (Na2TiS2).

Grain boundary strengthening in strongly textured magnesium produced by hot rolling

The grain size dependence of the yield stress in hot rolled 99.87 pct magnesium sheets and rods was measured in the temperature range 77 K to 420 K. Hot rolling produced strong basal textures and, for a given grain size, the hot rolled material has a higher strength than extruded material. The yield strength-grain size relation in the above temperature range follows the Hall-Petch equation, and the temperature dependencies of the Hall-Petch constants σ0 and k are in support of the theory of Armstrong for hcp metals that the intercept σ0 is related to the critical resolved shear stress (CRSS) for basal slip (easy slip) and the slope k is related to the CRSS for prismatic slip (difficult slip) occurring near the grain boundaries. In the hot rolled magnesium, σ0 is larger and k is smaller than in extruded material, observations which are shown to result from strong unfavorable basal and favorable 1010 textures, respectively. Texture affects the Hall-Petch constants through its effect on the orientation factors relating them to the CRSS for the individual slip systems controlling them.

LIII absorption edge studies of mixed valent cerium intermetallics and related systems

LIII absorption edge measurements clearly delineate 3+ and 4+ states of Ce. Absorption edges of 3+ compounds show a single peak, while those of 4+ compounds show two peaks, both appearing at higher energies than the characteristic peaks of 3+ compounds. In systems where there is interconfigurational fluctuation, features due to both 3+ and 4+ states are distinctly seen.

Electronic-structures of h2o.bf3 and related n-v addition-compounds - a combined eels-ups study in vapor-phase

The detailed electronic structure of the n-v addition compound H2O·BF3 has been investigated for the first time by a combined use of electron energy loss spectroscopy (EELS) and UV photoelectron spectroscopy (UPS) augmented by MO calculations. The calculated molecular orbital energies of H2O·BF3 agree well with the UPS results and have been used to assign the electronic transitions obtained from EELS and to construct an orbital correlation diagram. The Journal of Chemical Physics is copyrighted by The American Institute of Physics.

The crystal structure of the amino-terminal pentapeptide of suzukacillin. Occurrence of a four-fold peptide helix

The monohydrate of the protected amino-terminal pentapeptide of suzukacillin, t-butoxycarbonyl--aminoisobutyryl-L-prolyl-L-valyl--aminoisobutyryl-L-valine methyl ester, C29H51N5O8, crystallizes in the orthorhombic space group P212121 with a= 10.192, b= 10.440, c= 32.959 Å, and Z= 4. The structure has been solved by direct methods and refined to an R value of 0.101 for 1 827 observed reflections. The molecule exists as a four-fold helix with a pitch of 5.58 Å. The helix is stabilised by N–H O hydrogen bonds, two of the 51 type (corresponding to the -helix) and the third of the 41 type (310 helix). The carbonyl oxygen of the amino-protecting group accepts two hydrogen bonds, one each from the amide NH groups of the third (41) and fourth (51) residues. The remaining 51 hydrogen bond is between the two terminal residues. The lone water molecule in the structure is hydrogen bonded to carbonyl oxygens of the prolyl residue in one molecule and the non-terminal valyl residue in a symmetry-related molecule.

Modeling of dynamic material behavior in hot deformation: Forging of Ti-6242

A new method of modeling material behavior which accounts for the dynamic metallurgical processes occurring during hot deformation is presented. The approach in this method is to consider the workpiece as a dissipator of power in the total processing system and to evaluate the dissipated power co-contentJ = ∫o σ ε ⋅dσ from the constitutive equation relating the strain rate (ε) to the flow stress (σ). The optimum processing conditions of temperature and strain rate are those corresponding to the maximum or peak inJ. It is shown thatJ is related to the strain-rate sensitivity (m) of the material and reaches a maximum value(J max) whenm = 1. The efficiency of the power dissipation(J/J max) through metallurgical processes is shown to be an index of the dynamic behavior of the material and is useful in obtaining a unique combination of temperature and strain rate for processing and also in delineating the regions of internal fracture. In this method of modeling, noa priori knowledge or evaluation of the atomistic mechanisms is required, and the method is effective even when more than one dissipation process occurs, which is particularly advantageous in the hot processing of commercial alloys having complex microstructures. This method has been applied to modeling of the behavior of Ti-6242 during hot forging. The behavior of α+ β andβ preform microstructures has been exam-ined, and the results show that the optimum condition for hot forging of these preforms is obtained at 927 °C (1200 K) and a strain rate of 1CT•3 s•1. Variations in the efficiency of dissipation with temperature and strain rate are correlated with the dynamic microstructural changes occurring in the material.