Deterministic schemes for key distribution in wireless sensor networks

In this paper, we propose a new security metric for measuring resilience of a symmetric key distribution scheme in wireless sensor network. A polynomial-based and a novel complete connectivity schemes are proposed and an analytical comparison, in terms of security and connectivity, between the schemes is shown. Motivated by the schemes, we derive general expressions for security and connectivity. A number of conclusions are made using these general expressions.

Mobile node authentication using key distribution scheme in wireless sensor networks

We consider the problem of secure communication in mobile Wireless Sensor Networks (WSNs). Achieving security in WSNs requires robust encryption and authentication standards among the sensor nodes. Severe resources constraints in typical Wireless Sensor nodes hinder them in achieving key agreements. It is proved from past studies that many notable key management schemes do not work well in sensor networks due to their limited capacities. The idea of key predistribution is not feasible considering the fact that the network could scale to millions. We prove a novel algorithm that provides robust and secure communication channel in WSNs. Our Double Encryption with Validation Time (DEV) using Key Management Protocol algorithm works on the basis of timed sessions within which a secure secret key remains valid. A mobile node is used to bootstrap and exchange secure keys among communicating pairs of nodes. Analysis and simulation results show that the performance of the DEV using Key Management Protocol Algorithm is better than the SEV scheme and other related work.

Efficient Key Management and Distribution for MANET

Ad hoc networks are being used in applications ranging from disaster recovery to distributed collaborative entertainment applications. Ad hoc networks have become one of the most attractive solution for rapid deployment of interconnecting large number of mobile personal devices. The user community of mobile personal devices are demanding a variety of value added multimedia entertainment services. The popularity of peer group is increasing and one or some members of the peer group need to send data to some or all members of the peer group. The increasing demand for group oriented value added services is driving for efficient multicast service over ad hoc networks. Access control mechanisms need to be deployed to provide guarantee that the unauthorized users cannot access the multicast content. In this paper, we present a topology aware key management and distribution scheme for secure overlay multicast over MANET to address node mobility related issues for multicast key management. We use overlay approach for key distribution and our objective is to keep communication overhead low for key management and distribution. We also incorporate reliability using explicit acknowledgments with the key distribution scheme. Through simulations we show that the proposed key management scheme has low communication overhead for rekeying and improves the reliability of key distribution.

Secure Routing with an Integrated Localized Key Management Protocol in MANETs

A routing protocol in a mobile ad hoc network (MANET) should be secure against both the outside attackers which do not hold valid security credentials and the inside attackers which are the compromised nodes in the network. The outside attackers can be prevented with the help of an efficient key management protocol and cryptography. However, to prevent inside attackers, it should be accompanied with an intrusion detection system (IDS). In this paper, we propose a novel secure routing with an integrated localized key management (SR-LKM) protocol, which is aimed to prevent both inside and outside attackers. The localized key management mechanism is not dependent on any routing protocol. Thus, unlike many other existing schemes, the protocol does not suffer from the key management - secure routing interdependency problem. The key management mechanism is lightweight as it optimizes the use of public key cryptography with the help of a novel neighbor based handshaking and Least Common Multiple (LCM) based broadcast key distribution mechanism. The protocol is storage scalable and its efficiency is confirmed by the results obtained from simulation experiments.

Association Rule Sharing Model for Privacy Preservation and Collaborative Data Mining Efficiency

The disclosure of information and its misuse in Privacy Preserving Data Mining (PPDM) systems is a concern to the parties involved. In PPDM systems data is available amongst multiple parties collaborating to achieve cumulative mining accuracy. The vertically partitioned data available with the parties involved cannot provide accurate mining results when compared to the collaborative mining results. To overcome the privacy issue in data disclosure this paper describes a Key Distribution-Less Privacy Preserving Data Mining (KDLPPDM) system in which the publication of local association rules generated by the parties is published. The association rules are securely combined to form the combined rule set using the Commutative RSA algorithm. The combined rule sets established are used to classify or mine the data. The results discussed in this paper compare the accuracy of the rules generated using the C4. 5 based KDLPPDM system and the CS. 0 based KDLPPDM system using receiver operating characteristics curves (ROC).

Wigner distribution for angle coordinates in quantum mechanics

The method of Wigner distribution functions, and the Weyl correspondence between quantum and classical variables, are extended from the usual kind of canonically conjugate position and momentum operators to the case of an angle and angular momentum operator pair. The sense in which one has a description of quantum mechanics using classical phase‐space language is much clarified by this extension.

NMR relaxation study of disorder in the mixed system BP x GPI(1-x) and the low temperature transition from classical to quantum rotation

1H NMR spin-lattice relaxation time (T1) studies have been carried out in the temperature range 100 K to 4 K, at two Larmor frequencies 11.4 and 23.3 MHz, in the mixed system of betaine phosphate and glycine phosphite (BPxGPI(1-x)), to study the effects of disorder on the proton group dynamics. Analysis of T1 data indicates the presence of a number of inequivalent methyl groups and a gradual transition from classical reorientations to quantum tunneling rotations. At lower temperatures, microstructural disorder in the local environments of the methyl groups, result in a distribution in the activation energy (Ea) and the torsional energy gap (E01). For certain values of x, the magnetisation recovery shows biexponential behaviour at lower temperatures.

Quantum-Ohmic Resistance Fluctuation In Disordered Conductors - An Invariant Imbedding Approach

It is now well known that in extreme quantum limit, dominated by the elastic impurity scattering and the concomitant quantum interference, the zero-temperature d.c. resistance of a strictly one-dimensional disordered system is non-additive and non-self-averaging. While these statistical fluctuations may persist in the case of a physically thin wire, they are implicitly and questionably ignored in higher dimensions. In this work, we have re-examined this question. Following an invariant imbedding formulation, we first derive a stochastic differential equation for the complex amplitude reflection coefficient and hence obtain a Fokker-Planck equation for the full probability distribution of resistance for a one-dimensional continuum with a Gaussian white-noise random potential. We then employ the Migdal-Kadanoff type bond moving procedure and derive the d-dimensional generalization of the above probability distribution, or rather the associated cumulant function –‘the free energy’. For d=3, our analysis shows that the dispersion dominates the mobilitly edge phenomena in that (i) a one-parameter B-function depending on the mean conductance only does not exist, (ii) an approximate treatment gives a diffusion-correction involving the second cumulant. It is, however, not clear whether the fluctuations can render the transition at the mobility edge ‘first-order’. We also report some analytical results for the case of the one dimensional system in the presence of a finite electric fiekl. We find a cross-over from the exponential to the power-low length dependence of resistance as the field increases from zero. Also, the distribution of resistance saturates asymptotically to a poissonian form. Most of our analytical results are supported by the recent numerical simulation work reported by some authors.

Strong-coupling expansion for the momentum distribution of the Bose-Hubbard model with benchmarking against exact numerical results

A strong-coupling expansion for the Green's functions, self-energies, and correlation functions of the Bose-Hubbard model is developed. We illustrate the general formalism, which includes all possible (normal-phase) inhomogeneous effects in the formalism, such as disorder or a trap potential, as well as effects of thermal excitations. The expansion is then employed to calculate the momentum distribution of the bosons in the Mott phase for an infinite homogeneous periodic system at zero temperature through third order in the hopping. By using scaling theory for the critical behavior at zero momentum and at the critical value of the hopping for the Mott insulator–to–superfluid transition along with a generalization of the random-phase-approximation-like form for the momentum distribution, we are able to extrapolate the series to infinite order and produce very accurate quantitative results for the momentum distribution in a simple functional form for one, two, and three dimensions. The accuracy is better in higher dimensions and is on the order of a few percent relative error everywhere except close to the critical value of the hopping divided by the on-site repulsion. In addition, we find simple phenomenological expressions for the Mott-phase lobes in two and three dimensions which are much more accurate than the truncated strong-coupling expansions and any other analytic approximation we are aware of. The strong-coupling expansions and scaling-theory results are benchmarked against numerically exact quantum Monte Carlo simulations in two and three dimensions and against density-matrix renormalization-group calculations in one dimension. These analytic expressions will be useful for quick comparison of experimental results to theory and in many cases can bypass the need for expensive numerical simulations.

Quantum kinematics of Fermi-Dirac vacuum-plus-one-electron problem

Following Weisskopf, the kinematics of quantum mechanics is shown to lead to a modified charge distribution for a test electron embedded in the Fermi-Dirac vacuum with interesting consequences.

Topological analysis off charge density distribution in concomitant polymorphs of 3-acetylcoumarin, a case off packing polymorphism

Detailed investigation of the charge density distribution in concomitant polymorphs of 3-acetylcoumarin in terms of experimental and theoretical densities shows significant differences in the intermolecular features when analyzed based on the topological properties via the quantum theory of atoms in molecules. The two forms, triclinic and monoclinic (Form A and Form B), pack in the crystal lattice via weak C-H---O and C-H---pi interactions. Form A results in a head-to-head molecular stack, while Form B generates a head-to-tail stack. Form A crystallizes in PI (Z' = 2) and Form B crystallizes in P2(1)/n (Z = 1). The electron density maps of the polymorphs demonstrate the differences in the nature of the charge density distribution in general. The charges derived from experimental and theoretical analysis show significant differences with respect to the polymorphic forms. The molecular dipole moments differ significantly for the two forms. The lattice energies evaluated at the HF and DFT (B3LYP) methods with 6-31G** basis set for the two forms clearly suggest that Form A is the thermodynamically stable form as compared to Form B. Mapping of electrostatic potential over the molecular surface shows dominant variations in the electronegative region, which bring out the differences between the two forms.

Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit

In this paper, we focus on the performance of a nanowire field-effect transistor in the ultimate quantum capacitance limit (UQCL) (where only one subband is occupied) in the presence of interface traps (D-it), parasitic capacitance (C-L), and source/drain series resistance (R-s,R-d), using a ballistic transport model and compare the performance with its classical capacitance limit (CCL) counterpart. We discuss four different aspects relevant to the present scenario, namely: 1) gate capacitance; 2) drain-current saturation; 3) subthreshold slope; and 4) scaling performance. To gain physical insights into these effects, we also develop a set of semianalytical equations. The key observations are as follows: 1) A strongly energy-quantized nanowire shows nonmonotonic multiple-peak C-V characteristics due to discrete contributions from individual subbands; 2) the ballistic drain current saturates better in the UQCL than in the CCL, both in the presence and absence of D-it and R-s,R-d; 3) the subthreshold slope does not suffer any relative degradation in the UQCL compared to the CCL, even with Dit and R-s,R-d; 4) the UQCL scaling outperforms the CCL in the ideal condition; and 5) the UQCL scaling is more immune to R-s,R-d, but the presence of D-it and C-L significantly degrades the scaling advantages in the UQCL.

Scaling theory of quantum resistance distributions in disordered systems

We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered one-dimensional conductor. We show that in the thermodynamic limit this distribution is characterized by two independent parameters for strong disorder, leading to a two-parameter scaling theory of localization. Only in the limit of weak disorder we recover single parameter scaling, consistent with existing theoretical treatments.

E. C. G. Sudarshan and Symmetry in Classical Dynamics, Optics and Quantum Mechanics

We review work initiated and inspired by Sudarshan in relativistic dynamics, beam optics, partial coherence theory, Wigner distribution methods, multimode quantum optical squeezing, and geometric phases. The 1963 No Interaction Theorem using Dirac's instant form and particle World Line Conditions is recalled. Later attempts to overcome this result exploiting constrained Hamiltonian theory, reformulation of the World Line Conditions and extending Dirac's formalism, are reviewed. Dirac's front form leads to a formulation of Fourier Optics for the Maxwell field, determining the actions of First Order Systems (corresponding to matrices of Sp(2,R) and Sp(4,R)) on polarization in a consistent manner. These groups also help characterize properties and propagation of partially coherent Gaussian Schell Model beams, leading to invariant quality parameters and the new Twist phase. The higher dimensional groups Sp(2n,R) appear in the theory of Wigner distributions and in quantum optics. Elegant criteria for a Gaussian phase space function to be a Wigner distribution, expressions for multimode uncertainty principles and squeezing are described. In geometric phase theory we highlight the use of invariance properties that lead to a kinematical formulation and the important role of Bargmann invariants. Special features of these phases arising from unitary Lie group representations, and a new formulation based on the idea of Null Phase Curves, are presented.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (similar to 8%), the dots formed from the Strannski-Krastanow (S-K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.