Fuzzy data envelopment analysis for performance evaluation of an irrigation system

Sixteen irrigation subsystems of the Mahi Bajaj Sagar Project, Rajasthan, India, are evaluated and selection of the most suitable/best is made using data envelopment analysis (DEA) in both deterministic and fuzzy environments. Seven performance-related indicators, namely, land development works (LDW), timely supply of inputs (TSI), conjunctive use of water resources (CUW), participation of farmers (PF), environmental conservation (EC), economic impact (EI) and crop productivity (CPR) are considered. Of the seven, LDW, TSI, CUW, PF and EC are considered inputs, whereas CPR and EI are considered outputs for DEA modelling purposes. Spearman rank correlation coefficient values are also computed for various scenarios. It is concluded that DEA in both deterministic and fuzzy environments is useful for the present problem. However, the outcome of fuzzy DEA may be explored for further analysis due to its simple, effective data and discrimination handling procedure. It is inferred that the present study can be explored for similar situations with suitable modifications.

Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors

We theoretically analyze the performance of transition metal dichalcogenide (MX2) single wall nanotube (SWNT) surround gate MOSFET, in the 10 nm technology node. We consider semiconducting armchair (n, n) SWNT of MoS2, MoSe2, WS2, and WSe2 for our study. The material properties of the nanotubes are evaluated from the density functional theory, and the ballistic device characteristics are obtained by self-consistently solving the Poisson-Schrodinger equation under the non-equilibrium Green's function formalism. Simulated ON currents are in the range of 61-76 mu A for 4.5 nm diameter MX2 tubes, with peak transconductance similar to 175-218 mu S and ON/OFF ratio similar to 0.6 x 10(5)-0.8 x 10(5). The subthreshold slope is similar to 62.22 mV/decade and a nominal drain induced barrier lowering of similar to 12-15 mV/V is observed for the devices. The tungsten dichalcogenide nanotubes offer superior device output characteristics compared to the molybdenum dichalcogenide nanotubes, with WSe2 showing the best performance. Studying SWNT diameters of 2.5-5 nm, it is found that increase in diameter provides smaller carrier effective mass and 4%-6% higher ON currents. Using mean free path calculation to project the quasi-ballistic currents, 62%-75% reduction from ballistic values in drain current in long channel lengths of 100, 200 nm is observed.