226 resultados para Portfolios (Background Materials)

em Indian Institute of Science - Bangalore - Índia


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Several experimental studies have shown that fracture surfaces in brittle metallic glasses (MGs) generally exhibit nanoscale corrugations which may be attributed to the nucleation and coalescence of nanovoids during crack propagation. Recent atomistic simulations suggest that this phenomenon is due to large spatial fluctuations in material properties in a brittle MG, which leads to void nucleation in regions of low atomic density and then catastrophic fracture through void coalescence. To explain this behavior, we propose a model of a heterogeneous solid containing a distribution of weak zones to represent a brittle MG. Plane strain continuum finite element analysis of cavitation in such an elastic-plastic solid is performed with the weak zones idealized as periodically distributed regions having lower yield strength than the background material. It is found that the presence of weak zones can significantly reduce the critical hydrostatic stress for the onset of cavitation which is controlled uniquely by the local yield properties of these zones. Also, the presence of weak zones diminishes the sensitivity of the cavitation stress to the volume fraction of a preexisting void. These results provide plausible explanations for the observations reported in recent atomistic simulations of brittle MGs. An analytical solution for a composite, incompressible elastic-plastic solid with a weak inner core is used to investigate the effect of volume fraction and yield strength of the core on the nature of cavitation bifurcation. It is shown that snap-cavitation may occur, giving rise to sudden formation of voids with finite size, which does not happen in a homogeneous plastic solid. (c) 2012 Elsevier Ltd. All rights reserved.

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Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN high electron mobility transistors (HEMTs) and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance based profiling techniques is challenging due to their fully depleted nature even at zero bias voltages. We provide a simple and effective model to extract carrier concentrations in fully depleted GaN films using capacitance-voltage (C-V) measurements. Extensive mercury probe C-V profiling has been performed on GaN films of differing thicknesses and doping levels in order to validate this model. Carrier concentrations as extracted from both the conventional C-V technique for partially depleted films having the same doping concentration, and Hall measurements show excellent agreement with those predicted by the proposed model thus establishing the utility of this technique. This model can be readily extended to estimate background carrier concentrations from the depletion region capacitances of HEMT structures and fully depleted films of any class of semiconductor materials.

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The characterisation of cracks is usually done using the well known three basic fracture modes, namely opening, shearing and tearing modes. In isotropic materials these modes are uncoupled and provide a convenient way to define the fracture parameters. It is well known that these fracture modes are coupled in anisotropic materials. In the case of orthotropic materials also, coupling exists between the fracture modes, unless the crack plane coincides with one of the axes of orthotropy. The strength of coupling depends upon the orientation of the axes of orthotropy with respect to the crack plane and so the energy release rate components associated with each of the modes vary with crack orientation. The variation, of these energy release rate components with the crack orientation with respect to orthotropic axes, is analyzed in this paper. Results indicate that in addition to the orthotropic planes there exists other planes with reference to which fracture modes are uncoupled.

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The technique of friction stir welding (FSW) puts effective use frictional heat for the purpose of joining metallic materials. In this research article, we present and discuss an experimental method to determine the coefficient of friction during FSW. The experiments were conducted to study the interaction between the FSW tool (a die steel) and the base metal (a high strength aluminum alloy) at various contact pressures (13MPa, 26MPa, and 39MPa) and rotation speeds (200rpm, 600rpm, 1000rpm, and 1400rpm). The experimental results, the microstructure, and the process temperature reveal the experimental setup to be capable of simulating the conditions during FSW. The coefficient of friction was found to vary from 0.15 to 1.4, and the temperature increased to as high as 450C. The coefficient of friction was found to increase with temperature. There exists a critical temperature at which point a steep increase in the coefficient of friction was observed. The critical temperature decreases from 250C at a contact pressure of 26MPa to 200C at contact pressure of 34MPa. Below the critical temperature at a specific contact pressure the maximum coefficient of friction is 0.6, and above the critical temperature it reaches a value as high as 1.4. The steep increase in the coefficient of friction is found to be due to the seizure phenomenon and the contact condition during FSW between the tool and the workpiece (base metal) is found to be sticking.

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In this paper, we study the Einstein relation for the diffusivity to mobility ratio (DMR) in n-channel inversion layers of non-linear optical materials on the basis of a newly formulated electron dispersion relation by considering their special properties within the frame work of k.p formalism. The results for the n-channel inversion layers of III-V, ternary and quaternary materials form a special case of our generalized analysis. The DMR for n-channel inversion layers of II-VI, IV-VI and stressed materials has been investigated by formulating the respective 2D electron dispersion laws. It has been found, taking n-channel inversion layers of CdGeAs2, Cd(3)AS(2), InAs, InSb, Hg1-xCdxTe, In1-xGaxAsyP1-y lattice matched to InP, CdS, PbTe, PbSnTe, Pb1-xSnxSe and stressed InSb as examples, that the DMR increases with the increasing surface electric field with different numerical values and the nature of the variations are totally band structure dependent. The well-known expression of the DMR for wide gap materials has been obtained as a special case under certain limiting conditions and this compatibility is an indirect test for our generalized formalism. Besides, an experimental method of determining the 2D DMR for n-channel inversion layers having arbitrary dispersion laws has been suggested.

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An overview of the synthesis of materials under microwave irradiation has been presented based on the work performed recently. A variety of reactions such as direct combination, carbothermal reduction, carbidation and nitridation have been described. Examples of microwave preparation of glasses are also presented. Great advantages of fast, clean and reduced reaction temperature of microwave methods are emphasized. The example of ZrO2-CeO2 ceramics has been used show the extraordinarily fast and effective sintering which occurs in microwave irradiation.

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This paper deals with a new form of nonlinear Raman spectroscopy called `ultrafast Raman loss spectroscopy (URLS)'. URLS is analogous to stimulated Raman spectroscopy (SRS) but is much more sensitive than SRS. The signals are background (noise) free unlike in coherent anti-Stokes Raman spectroscopy (CARS) and it provides natural fluorescence rejection, which is a major problem in Raman spectroscopy. In addition, being a self-phase matching process, the URLS experiment is much easier than CARS, which requires specific phase matching of the laser pulses. URLS is expected to be alternative if not competitive to CARS microscopy, which has become a popular technique in applications to materials, biology and medicine.

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In a search for inorganic oxide materials showing second-order nonlinear optical (NLO) susceptibility, we investigated several berates, silicates, and a phosphate containing trans-connected MO6, octahedral chains or MO5 square pyramids, where, M = d(0): Ti(IV), Nb(V), or Ta(V), Our investigations identified two new NLO structures: batisite, Na2Ba(TiO)(2)Si4O12, containing trans-connected TiO5 octahedral chains, and fresnoite, Ba2TiOSi2O7, containing square-pyramidal TiO5. Investigation of two other materials containing square-pyramidal TiO5 viz,, Cs2TiOP2O7 and Na4Ti2Si8O22. 4H(2)O, revealed that isolated TiO5, square pyramids alone do not cause a second harmonic generation (SHG) response; rather, the orientation of TiO5 units to produce -Ti-O-Ti-O- chains with alternating long and short Ti-O distances in the fresnoite structure is most likely the origin of a strong SHG response in fresnoite,

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The interface between toluene and water has been employed to prepare ultrathin Janus nanocrystalline films of metal oxides, metal chalcogenides and gold, wherein the surface on the organic-side is hydrophobic and the aqueous-side is hydrophilic. We have changed the nature of the metal precursor or capping agent in the organic layer to increase the hydrophobicity. The strategy employed for this purpose is to increase the length of the alkane chain in the precursor or use a perfluroalkane derivative as precursor or as a capping agent. The hydrophobicity and hydrophilicity of the Janus films have been determined by contact angle measurements. The morphology of hydrophobic and hydrophilic sides of the film have been examined by field emission scanning electron microscopy.

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Composite materials exhibiting different moduli in tension and in compression, commonly called as bimodular composites are being used in many engineering fields. A finite element analysis is carried out for small deflection static behavior of laminated curved beams of bi modulus materials for both solid and hollow circular cross-sections using an iterative procedure. The finite element has 16 d.o.f. and uses the displacement field in terms of first order Hermite in terpolation polynomials. The neutral surface, i.e. the locus of points having zero axial strain is found to vary drastically depending on the loading, lay up schemes and radius of curvature. As il lustrations, plots of the cross-sections of the ruled neutral-surface are presented for some of the investigated cases. Using this element a few problems of curved laminated beams of bimodulus materials are solved for both solid and hollow circular cross-sections.

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C 19Ha4N203.~xH 2 O, Mr= 347.5, monoclinic, C2, a = 15.473 (3), b = 6.963 (2), c = 20.708 (4) ]1, //=108.2(2) ° , V=2119(2)A 3, Z=4, Ox= 1.089 Mg m -3, ,~(Cu Ktx) = 1.5418 ]1, p = 0.523 mm -~, F(000) = 760.0, T= 293 K, R = 0.068 for 1967 unique reflections. The C=C bond length is 1-447 (6)]1, significantly longer than in ethylene, 1.336 (2)]1. The crystal structure is stabilized by O-H...O hydrogen bonding. Explanation for the observed low second-harmonic-generation efficiency (0.5 times that of urea) is provided.

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CIoH15NO282, Mr=245"0, orthorhombic, P21212 ~, a = 6.639 (2), b = 8.205 (2), c = 22.528(6)A, V= I227.2(6)A 3, z=4, Dm= 1.315, Dx= 1.326gem -3, MoKa, 2=0.7107A, 12= 3.63 cm -1, F(000) = 520, T= 293 K, R = 0.037 for 1115 significant reflections. The second-harmonicgeneration (SHG) efficiency of this compound is only 1/10th of the urea standard. The observed low second-order nonlinear response may be attributed to the unfavourable packing of the molecules in the crystal lattice.

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Analyses of diffusion and dislocation creep in nanocrystals needs to take into account the generally utilized low temperatures, high stresses and very fine grain sizes. In nanocrystals, diffusion creep may be associated with a nonlinear stress dependence and dislocation creep may involve a grain size dependence.

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The extragalactic diffuse emission at gamma-ray energies has interesting cosmological implications since these photons suffer little or no attenuation during their propagation from the site of origin. The emission could originate from either truly diffuse processes or from unresolved point sources such as AGNs, normal galaxies and starburst galaxies. Here, we examine the unresolved point source origin of the extragalactic gamma-ray background emission from normal galaxies and starburst galaxies. gamma-ray emission from normal galaxies is primarily coming from cosmic-ray interactions with interstellar matter and radiation (similar to 90%) along with a small contribution from discrete point sources (similar to 10%). Starburst galaxies are expected to have enhanced supernovae activity which leads to higher cosmic-ray densities, making starburst galaxies sufficiently luminous at gamma-ray energies to be detected by the current gamma-ray mission(Fermi Gamma-ray Space Telescope).

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The coefficients of thermal expansion reported by Worlton et al. [6] in the case of zircon are given in Table II along with the present data. Although Oql > or• in both cases, the anisotropy is more marked in the case of DyV04. From Table II, it is clear that the coefficient of volume expansion (,6) is almost the same for both compounds.