Distribution of phosphorus and oxygen between liquid steel and basic oxygen steelmaking slag

The efficiency of dephosphorisation is governed by the thermodynamic behaviour of phosphorus and oxygen in molten metal, and P2O5 and FeO in slag. The equilibrium distribution of phosphorus and oxygen, for a wide range of chemical compositions simulating the evolution of slag composition during a typical BOF blow, has been experimentally determined. A mathematical model for estimation of the activity coefficients, as a function of the chemical composition, was also attempted.

Studies of phosphazenes. 28. Reactions of pentachloro- and pentafluoro(triphenylphosphazenyl)cyclotriphosphazenes with sodium methoxide. Mechanistic aspects and their implications for nucleophilic displacement at a tetrahedral phosphorus(V) center

Abstract is not available.

A study on the reaction of silicon tetrahalides with phosphorus pentoxide and of alkali metal fluorosilicates with phosphorus pentoxide and sulphur trioxide

Silicon tetrahalides, SiX4 (X=F, Cl, Br) and the fluorosilicates of sodium and potassium react with phosphorus pentoxide above 300°C. The tetrahalides give rise to the corresponding phosphoryl halides and silica, while the fluorosilicates form the corresponding metal fluorophosphates and silicon tetrafluoride. The reaction of the fluorosilicates of sodium and potassium with sulphur trioxide occurs at room temperature to give rise to the corresponding metal fluorosulphates and silicon tetrafluoride.

Phosphorus Partition between Liquid Steel and CaO-SiO2-P2O5-MgO Slag Containing Low FeO

CaO-SiO2-FeOx-P2O5-MgO bearing slags are typical in the basic oxygen steelmaking (BOS) process. The partition ratio of phosphorus between slag and steel is an index of the phosphorus holding capacity of the slag, which determines the phosphorus content achievable in the finished steel. The influences of FeO concentration and basicity on the equilibrium phosphorus partition ratios were experimentally determined at temperatures of 1873 and 1923 K, for conditions of MgO saturation. The partition ratio initially increased with basicity but attained a constant value beyond basicity of 2.5. An increase in FeO concentration up to approximately 13 to 14 mass pet was beneficial for phosphorus partition.

Effect of associating anions on phosphorus retention in soil II. Under variable anion concentration

The results of the present investigation reveal that the presence of anions in the reacting medium greatly modify the reactions between soil and solution P. Associating anions reduce considerably the retention of phosphate in soils. Citrate, tartrate, and silicate are found to be superior to arsenate, oxalate, and fluoride in reducing phosphate retention in soil. The performance of associating anions depends on the pH and P concentration of the reacting medium. The nature and properties of soil also play a highly significant role on the effectiveness of associating anions.

Studies on phosphorus oxychloride and aluminium chloride complex

1. Anhydrous aluminium chloride reacts with phosphorus oxychloride to give a complex with a composition AlCl3.2 POCl3 which can be prepared in the form of a free flowing powder. 2. The phosphorus oxychloride-aluminium chloride complex in nitrobenzene dissociates into AlCl3.POCl3 and POCl3 as indicated by the cryoscopic measurements. 3. The solution of the complex in nitrobenzene has a higher specific conductivity than the corresponding electrical conductivities of individual components. Similar higher electrical conductance is observed when the two components are mixed in nitrobenzene in different proportions. 4.When a solution of anhydrous aluminium chloride in nitrobenzene is titrated conductometrically against a solution of phosphorus oxychloride in nitrobenzene, a limiting value in the conductivity is reached at point corresponding to the molecular composition, the components in the ratio of 1:2 AlCl3: POCl3 in solution. 5. The absorption maxima of the complex in nitrobenzene solution differ from the absorption maximum of the individual components.

Observation of a large coupling of a bound dihydrogen ligand to phosphorus ligands in trans-[(dppe)(2)Ru(eta(2)-H-2) (PF(OMe)(2))][BF4](2) complex

A new dicationic dihydrogen complex of the type trans-[(dppe)(2)Ru(eta (2)-H-2)(PF(OMe)(2))]BF4](2) has been prepared and characterized. A large coupling of about 50 Hz between the H-2 and trans-phosphorus ligand in this complex has been observed.

Neutralization of phosphorus in polycrystalline silicon by hydrogenation

Experimental evidence that phosphorus in silicon is neutralized by hydrogenation is presented by measuring changes in sheet resistance and Hall mobility carrier in heavily phosphorus���doped polycrystalline films.

Thermodynamics of Phosphorus and Sulphur Removal during Basic Oxygen Steelmaking

Removal of impurity elements from hot metal is essential in basic oxygen steelmaking. Oxidation of phosphorus from hot metal has been studied by several authors since the early days of steelmaking. Influence of different parameters on the distribution of phosphorus, seen during the recent work of the authors, differs somewhat from that reported earlier. On the other hand, removal of sulphur during steelmaking has drawn much less attention. This may be due to the magnitude of desulphurisation in oxygen steelmaking being relatively low and desulphurisation during hot metal pre-treatment or in the ladle furnace offering better commercial viability Further, it is normally accepted that sulphur is removed to steelmaking slag in the form of sulphide only However, recent investigations have indicated that a significant amount of sulphur removed during basic oxygen steelmaking can exist in the form of sulphate in the slag under oxidising conditions. The distribution of sulphur during steelmaking becomes more important in the event of carry-over of sulphur-rich blast-furnace slag, which increases sulphur load in the BOF. The chemical nature of sulphur in this slag undergoes a gradual transition from sulphide to sulphate as the oxidative refining progresses.

Chemistry of dihydrogen complexes containing only phosphorus co-ligands

A series of new dicationic dihydrogen complexes of ruthenium of the type cis-[(dppm)(2)Ru(eta(2)-H-2)(L)][BF4](2) (dppm = Ph2PCH2PPh2; L = phosphite) have been prepared by protonating the precursor hydride complexes cis-[(dPPM)(2)Ru(H)(L)][BF4] using HBF4.Et2O. The precursor hydride complexes have been obtained from trans-[(dppm)(2)Ru(H)(L)][BF4][(L = phospfiite) via a rare acid-catalysed isomerization reaction in six coordinate species. The trans-[(dppm)(2)Ru(H)(L)][BF4] complexes (L = phosphine) upon protonation gave the isomerized derivatives, however, further addition of acid resulted in a five-coordinate species, [(dppm)(2)RuCl](+) presumably via an intermediate phosphine dihydrogen complex. The electronic as well as the steric properties of the co-ligands seem to strongly influence the structure-reactivity behaviour of this series of complexes.

Deoxidation of liquid copper: effect of phosphorus on oxygen activity

An analysis of the deoxidation of liquid copper is made by use of an Ellingham-type diagram, which incorporates data now available on interactions between copper and the deoxidant in solution. To make the diagram more quantitative information is required on interactions between oxygen and the deoxidants and the activities of component oxides in slags of interest in copper smelting.

Probing 2D black phosphorus by quantum capacitance measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials, not only for fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in-plane anisotropy makes BP a unique material for making conceptually new types of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here, we report the quantum capacitance measurements together with the conductance measurements on an hBN-protected few-layer BP (similar to six layers) in a dual-gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature dependence conductivity. A large asymmetry is observed between the electron and hole side. This asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in conductance measurements.