62 resultados para Marine Current Energy

em Indian Institute of Science - Bangalore - Índia


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Low-voltage and high-current switching delay characteristics of a simple triggered vacuum gap (TVG) are described using lead zirconate titanate as the dielectric material in the auxiliary gap. This TVG has superior performance at high currents (up to 14 kA was studied) with regard to delay, reliable firing and extended life as compared to the one using either supramica or silicon carbide. The total delay consists of three intervals: to break down the auxiliary gap, to propagate the trigger plasma and to break down the main gap. The data on the influence of the various parameters like the trigger voltage, current, energy and the main circuit energy are given. It has been found that the delay due to the first two intervals is small compared to the third.

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Microalgae are the most sought after sources for biofuel production due to their capacity to utilize carbon and synthesize it into high density liquid. Current energy crisis have put microalgae under scanner for economical production of biodiesel. Modifications like physiological stress and genetic variation is done to increase the lipid yield of the microalgae. A study was conducted using a microalgal consortium for a period of 15 days to evaluate the feasibility of algal biomass from laboratory as well as outdoor culture conditions. Native algal strains were isolated from a tropical freshwater lake. Preliminary growth studies indicated the relationship between the nitrates and phosphates to the community structure through the days. The lipid profile done using Gas chromatography – Mass spectrometry, revealed the profile of the algal community. Resource competition led to isolation of algae, aided in the lipid profile of a single alga. However, further studies on the application of the mixed population are required to make this consortium approach economically viable for producing algae biofuels.

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The current-biased single electron transistor (SET) (CBS) is an integral part of almost all hybrid CMOS SET circuits. In this paper, for the first time, the effects of energy quantization on the performance of CBS-based circuits are studied through analytical modeling and Monte Carlo simulations. It is demonstrated that energy quantization has no impact on the gain of the CBS characteristics, although it changes the output voltage levels and oscillation periodicity. The effects of energy quantization are further studied for two circuits: negative differential resistance (NDR) and neuron cell, which use the CBS. A new model for the conductance of NDR characteristics is also formulated that includes the energy quantization term.

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Possible integration of Single Electron Transistor (SET) with CMOS technology is making the study of semiconductor SET more important than the metallic SET and consequently, the study of energy quantization effects on semiconductor SET devices and circuits is gaining significance. In this paper, for the first time, the effects of energy quantization on SET inverter performance are examined through analytical modeling and Monte Carlo simulations. It is observed that the primary effect of energy quantization is to change the Coulomb Blockade region and drain current of SET devices and as a result affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. It is shown that SET inverter designed with CT : CG = 1/3 (where CT and CG are tunnel junction and gate capacitances respectively) offers maximum robustness against energy quantization.

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Correlators of singlet and octet axial currents, as well as anomaly and pseudoscalar densities have been studied using QCD sum rules. Several of these sum rules are used to determine the couplings f(eta)(8),f(eta)(0), f(eta)('8) and f(eta)('0). We find mutually consistent values which are also in agreement with phenomenological values obtained from data on various decay and production rates. While most of the sum rules studied by us are independent of the contributions of direct instantons and screening correction, the singlet-singlet current correlator and the anomaly-anomaly correlator improve by their inclusion.

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In this paper, for the first time, the effects of energy quantization on single electron transistor (SET) inverter performance are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantization mainly changes the Coulomb blockade region and drain current of SET devices and thus affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new analytical model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. A compact expression is developed for a novel parameter quantization threshold which is introduced for the first time in this paper. Quantization threshold explicitly defines the maximum energy quantization that an SET inverter logic circuit can withstand before its noise margin falls below a specified tolerance level. It is found that SET inverter designed with CT:CG=1/3 (where CT and CG are tunnel junction and gate capacitances, respectively) offers maximum robustness against energy quantization.

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We use the Lippman-Schwinger scattering theory to study nonequilibrium electron transport through an interacting open quantum dot. The two-particle current is evaluated exactly while we use perturbation theory to calculate the current when the leads are Fermi liquids at different chemical potentials. We find an interesting two-particle resonance induced by the interaction and obtain criteria to observe it when a small bias is applied across the dot. Finally, for a system without spatial inversion symmetry, we find that the two-particle current is quite different depending on whether the electrons are incident from the left or the right lead.

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The Shifman-Vainshtein-Zakharov method of determining the eigenvalues and coupling strengths, from the operator product expansion, for the current correlation functions is studied in the nonrelativistic context, using the semiclassical expansion. The relationship between the low-lying eigenvalues, and the leading corrections to the imaginary-time Green function is elucidated by comparing systems which have almost identical spectra. In the case of an anharmonic oscillator it is found that with the procedure stated in the paper, that inclusion of more terms to the asymptotic expansion does not show any simple trend towards convergence to the exact values. Generalization to higher partial waves is given. In particular for the P-level of the oscillator, the procedure gives poorer results than for the S-level, although the ratio of the two comes out much better.

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The lead based ferroelectric PbZr0.53Ti0.47O3 (PZT), (Pb0.90La0.10)TiO3 (PLT10) and (Pb0.80La0.20)TiO3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C- V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 degrees C for 10 min. The phase transition temperature [T-c] of PLT20 increased from 115 degrees C to 120 degrees C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 degrees C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation. (C) 2007 Elsevier B.V. All rights reserved.

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In this paper, we report a systematic study of low frequency 1∕fα resistance fluctuation in thin metal films (Ag on Si) at different stages of damage process when the film is subjected to high current stressing. The resistance fluctuation (noise) measurement was carried out in situ using a small ac bias that has been mixed with the dc stressing current. The experiment has been carried out as a function of temperature in the range of 150–350 K. The experiment establishes that the current stressed film, as it undergoes damage due to various migration forces, develops an additional low-frequency noise spectral power that does not have the usual 1∕f spectral shape. The magnitude of extra term has an activated temperature dependence (activation energy of ≈0.1 eV) and has a 1∕f1.5 spectral dependence. The activation energy is the same as seen from the temperature dependence of the lifetime of the film. The extra 1∕f1.5 spectral power changes the spectral shape of the noise power as the damage process progress. The extra term likely arising from diffusion starts in the early stage of the migration process during current stressing and is noticeable much before any change can be detected in simultaneous resistance measurements. The experiment carried out over a large temperature range establish a strong correlation between the evolution of the migration process in a current stressed film and the low-frequency noise component that is not a 1∕f noise.

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In this paper, the effects of energy quantization on different single-electron transistor (SET) circuits (logic inverter, current-biased circuits, and hybrid MOS-SET circuits) are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantizationmainly increases the Coulomb blockade area and Coulomb blockade oscillation periodicity, and thus, affects the SET circuit performance. A new model for the noise margin of the SET inverter is proposed, which includes the energy quantization effects. Using the noise margin as a metric, the robustness of the SET inverter is studied against the effects of energy quantization. An analytical expression is developed, which explicitly defines the maximum energy quantization (termed as ``quantization threshold'') that an SET inverter can withstand before its noise margin falls below a specified tolerance level. The effects of energy quantization are further studiedfor the current-biased negative differential resistance (NDR) circuitand hybrid SETMOS circuit. A new model for the conductance of NDR characteristics is also formulated that explains the energy quantization effects.

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An examination of the data available at 22 meteorological stations in Karnataka State shows that wind velocities in the State as a whole are neither spectacularly high nor negligibly low. The highest winds (annual mean of around 13 km/hr) are experienced in parts of the northern maidan region of the State (Gulbarga, Raichur and Bidar districts) and in Bangalore. The winds are strongly seasonal: typically, the five monsoon months May-September account for about 80% of the annual wind energy flux. Although the data available are inadequate to make precise estimates, they indicate that the total wind energy potential of the State is about an order of magnitude higher than the current electrical energy consumption. The possible exploitation of wind energy for applications in rural areas therefore requires serious consideration, but it is argued that to be successful it is essential to formulate an integrated and carefully planned programme. The output of current windpumps needs to be increased; a doubling should be feasible by the design of suitable load-matching devices. The first cost has to be reduced by careful design, by the use of local materials and skills and by employing a labour-intensive technology. A consideration of the agricultural factors in the northern maidan region of the State shows that there is likely to be a strong need for mechanical assistance in supplemental and life-saving irrigation for the dry crops characteristic of the area. A technological target for a windmill that could find applications in this area would be one with a rotor diameter of about 10 m that can lift about 10,000 litres of water per hour in winds of 10 km/hr (2.8 m/s) hourly average speed and costs less than about Rs 10,000. Although no such windmills exist as of today, the authors believe that achievement of this target is feasible. An examination of various possible scenarios for the use of windmills in this area suggests that with a windpump costing about Rs 12,000, a three hectare farm growing two dry crops a year can expect an annual return of about 150% from an initial investment of about Rs 15,000. It is concluded that it should be highly worthwhile to undertake a coordinated programme for wind energy development that will include more detailed wind surveys in the northern maidan area (as well as some others, such as the Western Ghats), the development of suitable windmill designs and a study of their applications to agriculture as well as to other fields.

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For the first time, the impact of energy quantisation in single electron transistor (SET) island on the performance of hybrid complementary metal oxide semiconductor (CMOS)-SET transistor circuits has been studied. It has been shown through simple analytical models that energy quantisation primarily increases the Coulomb Blockade area and Coulomb Blockade oscillation periodicity of the SET device and thus influences the performance of hybrid CMOS-SET circuits. A novel computer aided design (CAD) framework has been developed for hybrid CMOS-SET co-simulation, which uses Monte Carlo (MC) simulator for SET devices along with conventional SPICE for metal oxide semiconductor devices. Using this co-simulation framework, the effects of energy quantisation have been studied for some hybrid circuits, namely, SETMOS, multiband voltage filter and multiple valued logic circuits. Although energy quantisation immensely deteriorates the performance of the hybrid circuits, it has been shown that the performance degradation because of energy quantisation can be compensated by properly tuning the bias current of the current-biased SET devices within the hybrid CMOS-SET circuits. Although this study is primarily done by exhaustive MC simulation, effort has also been put to develop first-order compact model for SET that includes energy quantisation effects. Finally, it has been demonstrated that one can predict the SET behaviour under energy quantisation with reasonable accuracy by slightly modifying the existing SET compact models that are valid for metallic devices having continuous energy states.

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The resistivities of zinc borate glasses containing Fe2O3, V2O5, and Fe2O3 + V2O5 have been measured as a function of composition and temperature. The values of resistivity and activation energy decrease as the transition metal oxide content is increased. The conductivities of the glasses containing Fe2O3 + V2O5 are more than the sum of those of the glasses containing only Fe2O3 or V2O5 (i.e. the activation energies are less than the sum of those in the glasses containing only Fe2O3 or V2O5). The results are discussed in terms of existing theories.