Mossbauer-Effect Study Of The Thermal-Decomposition In Hydrogen Of Homogeneously Mixed Ferrous Nickel Oxalates With Different Iron To Nickel Ratios

Mossbauer effect and X-ray measurements are carried out on product samples of the thermogravimetric analysis (TGA) and isothermal decomposition in hydrogen of homogeneously mixed ferrous nickel oxalates with different iron to nickel ratios. The formation of Fe-Ni alloy is obtained at considerably lower temperatures (z 300 "C) in each case. The Fe-Ni alloys obtained shift from iron-rich to nickel-rich composition as the nickel ratio in the mixed metal oxalates is increased. The formation of Pe-Ni Invar from mixed metal oxalate with Fe:Ni = 1:l is indicated in the early stages but not from those with Fe:Ni = 2: 1 or 64:36. An Produktproben von homogen verteilten Eisen-Nickeloxalaten mit unterschiedlichem Eisen- Nickel-Verhaltnis nach thermogravimetrischer Analyse (TGA) und isothermem Zerfall in Wasserst off werden Mollbauereffekt- und Rontgenmessnngen durchgefuhrt. In allen Fiillen wird die Bildung der Fe-Ni-Legierung bei betriichtlich niedrigeren Temperaturen (= 300 "C) erhalten. Die erhaltenen Fe-Ni-Legierungen verschieben sich von der eisenreichen zur nickelreichen Zusrtmmensetzung, wenn das Nickelverhaltnis in dem BIetall-Mischoxalat erhoht wird. Die Bildung der Fe-Ni-lnvar-Legierung aus dem Metall-Mischoxalat mit Fe:Ni = 1 : 1 wird in fruhen Zu Zustanden beobachtet, iedoch nicht aus Oxalaten mit Fe:Ni = 2:1 oder 64:36.

Mossbauer Effect Study of the Thermal Decomposition in Hydrogen of Homogeneously Mixed Ferrous Nickel Oxalates with Different Iron to Nickel Ratios

Mossbauer effect and X-ray measurements are carried out on product samples of the thermogravimetric analysis (TGA) and isothermal decomposition in hydrogen of homogeneously mixed ferrous nickel oxalates with different iron to nickel ratios. The formation of Fe-Ni alloy is obtained at considerably lower temperatures (z 300 "C) in each case. The Fe-Ni alloys obtained shift from iron-rich to nickel-rich composition as the nickel ratio in the mixed metal oxalates is increased. The formation of Pe-Ni Invar from mixed metal oxalate with Fe:Ni = 1:l is indicated in the early stages but not from those with Fe:Ni = 2: 1 or 64:36. An Produktproben von homogen verteilten Eisen-Nickeloxalaten mit unterschiedlichem Eisen- Nickel-Verhaltnis nach thermogravimetrischer Analyse (TGA) und isothermem Zerfall in Wasserstoff werden Mollbauereffekt- und Rontgenmessnngen durchgefuhrt. In allen Fiillen wird die Bildung der Fe-Ni-Legierung bei betriichtlich niedrigeren Temperaturen (= 300 "C) erhalten. Die erhaltenen Fe-Ni-Legierungen verschieben sich von der eisenreichen zur nickelreichen Zusrtmmensetzung, wenn das Nickelverhaltnis in dem BIetall-Mischoxalat erhoht wird. Die Bildung der Fe-Ni-lnvar-Legierung aus dem Metall-Mischoxalat mit Fe:Ni = 1 : 1 wird in fruhen Zustanden beobachtet, iedoch nicht aus Oxalaten mit Fe:Ni = 2:1 oder 64:36.

Recent Advances in Low CTE and High Density System-on-a-Package (SOP) Substrate with Thin Film Component Integration

The Packaging Research Center has been developing next generation system-on-a-package (SOP) technology with digital, RF, optical, and sensor functions integrated in a single package/module. The goal of this effort is to develop a platform substrate technology providing very high wiring density and embedded thin film passive and active components using PWB compatible materials and processes. The latest SOP baseline process test vehicle has been fabricated on novel Si-matched CTE, high modulus C-SiC composite core substrates using 10mum thick BCB dielectric films with loss tangent of 0.0008 and dielectric constant of 2.65. A semi-additive plating process has been developed for multilayer microvia build-up using BCB without the use of any vacuum deposition or polishing/CMP processes. PWB and package substrate compatible processes such as plasma surface treatment/desmear and electroless/electrolytic pulse reverse plating was used. The smallest line width and space demonstrated in this paper is 6mum with microvia diameters in the 15-30mum range. This build-up process has also been developed on medium CTE organic laminates including MCL-E-679F from Hitachi Chemical and PTFE laminates with Cu-Invar-Cu core. Embedded decoupling capacitors with capacitance density of >500nF/cm2 have been integrated into the build-up layers using sol-gel synthesized BaTiO3 thin films (200-300nm film thickness) deposited on copper foils and integrated using vacuum lamination and subtractive etch processes. Thin metal alloy resistor films have been integrated into the SOP substrate using two methods: (a) NiCrAlSi thin films (25ohms per square) deposited on copper foils (Gould Electronics) laminated on the build-up layers and two step etch process for resistor definition, and (b) electroless plated Ni-W-P thin films (70 ohms to few Kohms per square) on the BCB dielectric by plasma surface treatment and activation. The electrical design and build-up layer structure along- - with key materials and processes used in the fabrication of the SOP4 test vehicle were presented in this paper. Initial results from the high density wiring and embedded thin film components were also presented. The focus of this paper is on integration of materials, processes and structures in a single package substrate for system-on-a-package (SOP) implementation