Timing the Emergence of Resistance to Anti-HIV Drugs with Large Genetic Barriers

New antiretroviral drugs that offer large genetic barriers to resistance, such as the recently approved inhibitors of HIV-1 protease, tipranavir and darunavir, present promising weapons to avert the failure of current therapies for HIV infection. Optimal treatment strategies with the new drugs, however, are yet to be established. A key limitation is the poor understanding of the process by which HIV surmounts large genetic barriers to resistance. Extant models of HIV dynamics are predicated on the predominance of deterministic forces underlying the emergence of resistant genomes. In contrast, stochastic forces may dominate, especially when the genetic barrier is large, and delay the emergence of resistant genomes. We develop a mathematical model of HIV dynamics under the influence of an antiretroviral drug to predict the waiting time for the emergence of genomes that carry the requisite mutations to overcome the genetic barrier of the drug. We apply our model to describe the development of resistance to tipranavir in in vitro serial passage experiments. Model predictions of the times of emergence of different mutant genomes with increasing resistance to tipranavir are in quantitative agreement with experiments, indicating that our model captures the dynamics of the development of resistance to antiretroviral drugs accurately. Further, model predictions provide insights into the influence of underlying evolutionary processes such as recombination on the development of resistance, and suggest guidelines for drug design: drugs that offer large genetic barriers to resistance with resistance sites tightly localized on the viral genome and exhibiting positive epistatic interactions maximally inhibit the emergence of resistant genomes.

Influence of Bi 3+ ions in enhancing the magnitude of positive temperature coefficients of resistance in n-BaTiO3 ceramics

Bi3+ ions substituting at Ba-sites in a limited concentration range with another donor dopant occupying the Ti-sites in polycrystalline BaTiO3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require normal post sinter annealing or a change to an oxygen atmosphere during annealing. These ceramics had low porosities coupled with better stabilities to large applied electric fields and chemically reducing atmospheres. Bi3+ ions limited the grain growth to less than 8 mum in size, they enhanced the concentration of acceptor-type trap centres at the grain-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.

Multifunctional cryogenic sensors from n-BaTiO3 ceramics having strong negative temperature coefficient of resistance

Donor-doped n-BaTiO3 polycrystalline ceramics show a strong negative temperature coefficient of resistivity below the orthorhombic-rhombohedral phase transition point, from 10(2-3) Omega cm af 190 K to 10(10-13) Omega cm at less than or similar to 50 K, with thermal coefficient of resistance alpha = 20-23% K-1. Stable thermal sensors for low-temperature applications are realized therefrom. The negative temperature coefficient of resistivity region can be modified by substituting isovalent ions in the lattice. Highly nonlinear current-voltage (I-V) curves are observed at low temperatures, with a voltage maximum followed by the negative differential resistance. The I-V curves are sensitive to dissipation so that cryogenic sensors can be fabricated for liquid level control, flow rate monitoring, radiation detection or in-rush voltage limitation.

Time evolution of resistance in response to magnetic field: Evidence of glassy transport in La0.85Sr0.15CoO3

We demonstrate the distinct glassy transport phenomena associated with the phase separated and spin-glass-like phases of La0.85Sr0.15CoO3, prepared under different heat-treatment conditions. The low-temperature annealed (phase-separated) sample, exhibits a small change in resistance, with evolution of time, as compared to the high-temperature annealed (spin glass) one. However, the resistance change as a function of time, in both cases, is well described by a stretched exponential fit, signifying the slow dynamics. Moreover, the ultraviolet spectroscopy study evidences a relatively higher density of states in the vicinity of EF for low-temperature annealed sample and this correctly points to its less semiconducting behavior.

Temperature dependence of resistance and crystallization in amorphous Si15Te85-xGex thin films

Amorphous thin chalcogenide Si15Te85-xGex films (x: 5, 9, 10, 11, 12) are prepared by flash evaporation and the temperature dependence of resistance of these films has been studied in the temperature range 25-250 degrees C. All the compositions show a linear variation of resistance in this temperature range. Apart from the linear variation, a sharp reduction in resistance at one or at two distinct temperatures (T-TR1/T-TR2) is seen. Thin films annealed at these temperatures, when subjected to X-ray diffraction studies suggest that the dominant crystalline phase at T-TR1 and at T-TR2 is the same and the two dips are associated with varying levels of crystallization. This is also reflected in the atomic force microscopic (AFM) study. Further, the resistance of these two phases shows no drift when the films are annealed for varying lengths of time (10 min to 120 min) suggesting the stability of the phases.

Probing a spin-glass state in SrRuO3 thin films through higher-order statistics of resistance fluctuations

The complex perovskite oxide SrRuO3 shows intriguing transport properties at low temperatures due to the interplay of spin, charge, and orbital degrees of freedom. One of the open questions in this system is regarding the origin and nature of the low-temperature glassy state. In this paper we report on measurements of higher-order statistics of resistance fluctuations performed in epitaxial thin films of SrRuO3 to probe this issue. We observe large low-frequency non-Gaussian resistance fluctuations over a certain temperature range. Our observations are compatible with that of a spin-glass system with properties described by hierarchical dynamics rather than with that of a simple ferromagnet with a large coercivity.

Structural Basis of Drug Resistance by Genetic Variants of HIV Type 1 Clade C Protease from India

Using computer modeling of three-dimensional structures and structural information available on the crystal structures of HIV-1 protease, we investigated the structural effects of mutations, in treatment-naive and treatment-exposed individuals from India and postulated mechanisms of resistance in clade C variants. A large number of models (14) have been generated by computational mutation of the available crystal structures of drug bound proteases. Localized energy minimization was carried out in and around the sites of mutation in order to optimize the geometry of interactions present. Most of the mutations result in structural differences at the flap that favors the semiopen state of the enzyme. Some of the mutations were also found to confer resistance by affecting the geometry of the active site. The E35D mutation affects the flap structure in clade B strains and E35N and E35K mutation, seen in our modeled strains, have a more profound effect. Common polymorphisms at positions 36 and 63 in clade C also affected flap structure. Apart from a few other residues Gln-58, Asn-83, Asn-88, and Gln-92 and their interactions are important for the transition from the closed to the open state. Development of protease inhibitors by structure-based design requires investigation of mechanisms operative for clade C to improve the efficacy of therapy.

Transduction of Isoniazid Susceptibility-Resistance and Streptomycin Resistance in Mycobacteria

Transduction of resistance to isoniazid and streptomycin as well as susceptibility to isoniazid in Mycobacterium smegmatis SN2 has been demonstrated. A method has been described for the selection of isoniazid-susceptible variants after transduction of susceptibility.

The two-step positive temperature coefficient in resistance characteristics of n-(Ba,Pb)TiO3 ceramics created through inclusion of grain boundary modifier additives

Donor-doped n-(Ba,Pb)TiO3 polycrystalline ceramics exhibit distinctly two-step positive temperature coefficient of resistance (PTCR) characteristics when formulated with suitable combinations of B2O3 and Al2O3 as grain boundary modifiers by heterogeneous addition. B2O3 or Al2O3 when added singularly resulted in either steep or broad PTCR jumps respectively across the phase transition. The two-step PTCR is attributed to the activation of the acceptor states, created through B2O3 and Al2O3, for various temperature regimes above the Curie point (T-c). The changing pattern of trap states is evident from the presence of Ti4+-O--Al3+ type hole centres in the grain boundary layer regions, identified in the electron paramagnetic resonance (EPR) spectra. That charge redistribution occurs among the inter-band gap defect states on crossing the Curie temperature is substantiated by the temperature coefficient in the EPR results. Capacitance-voltage results clearly show that there is an increase in the density of trap states with the addition of B2O3 and Al2O3. The spread in energy values of these trap states is evident from the large change in barrier height (phi similar or equal to 0.25-0.6 eV) between 500 and 650 K.

Quantum-Ohmic Resistance Fluctuation In Disordered Conductors - An Invariant Imbedding Approach

It is now well known that in extreme quantum limit, dominated by the elastic impurity scattering and the concomitant quantum interference, the zero-temperature d.c. resistance of a strictly one-dimensional disordered system is non-additive and non-self-averaging. While these statistical fluctuations may persist in the case of a physically thin wire, they are implicitly and questionably ignored in higher dimensions. In this work, we have re-examined this question. Following an invariant imbedding formulation, we first derive a stochastic differential equation for the complex amplitude reflection coefficient and hence obtain a Fokker-Planck equation for the full probability distribution of resistance for a one-dimensional continuum with a Gaussian white-noise random potential. We then employ the Migdal-Kadanoff type bond moving procedure and derive the d-dimensional generalization of the above probability distribution, or rather the associated cumulant function –‘the free energy’. For d=3, our analysis shows that the dispersion dominates the mobilitly edge phenomena in that (i) a one-parameter B-function depending on the mean conductance only does not exist, (ii) an approximate treatment gives a diffusion-correction involving the second cumulant. It is, however, not clear whether the fluctuations can render the transition at the mobility edge ‘first-order’. We also report some analytical results for the case of the one dimensional system in the presence of a finite electric fiekl. We find a cross-over from the exponential to the power-low length dependence of resistance as the field increases from zero. Also, the distribution of resistance saturates asymptotically to a poissonian form. Most of our analytical results are supported by the recent numerical simulation work reported by some authors.

A comparative study of tbe regulation of cytochrome P-450 and glutathione transferase gene expression in rat liver

A cDNA clone for the Ya subunit of glutathione transferase from rat liver was constructed in E.coli. The clone hybridized to Ya and Yc subunit messenger RNAs. On the basis of experiments involving cell-free translation and hybridization to the cloned probe, it was shown that prototype inducers of cytochrome P-450 such as phenobarbitone and 3-methylcholanthrene as well as inhibitors such as CoCl2 and 3-amino-l,2,4-triazole enhanced the glutathione transferase (Ya+Yc) messenger RNA contents in rat liver. A comparative study with the induction of cytochrome P-450 (b+e) by phenobarbitone revealed that the drug manifested a striking increase in the nuclear pre-messenger RNAs for the cytochrome at 12 hr, but did not significantly affect the same in the case of glutathione transferase (Ya+Yc). 3-Amino-l, 2,4-tnazole and CoCl- blocked the phenobarbitone mediated increase in cytochrome P-450 (b+e) nuclear pre-messenger RNAs. These compounds did not significantly affect the glutathione transferase (Ya+Yc) nuclear pre-messenger RNA levels. The polysomal, poly (A)- containing messenger RNAs for cytochrome P-450 (b+e) increased by 12–15 fold after phenobarbitone administration, reached a maximum around 16hr and then decreased sharply. In comparison, the increase in the case of glutathione transferase (Ya+Yc) mesenger RNAs was sluggish and steady and a value of 3–4 fold was reached around 24 hr. Run-off transcription rates for cytochrome P-450 (b+e) increased by nearly 15 fold in 4 hr after phenobarbitone administration, whereas the increase for glutathione transferase (Ya+Yc) was only 2.0 fold. At 12 hr after the drug administration, the glutathione transferase (Ya+Yc) transcription rates were near normal. Administration of 3-amino-l,2,4-triazole and CoCl2 blocked the phenobarbitone-mediated increase in the transcription of cytochrome P-450 (b+e) messenger RNAs. These compounds at best had only marginal effects on the transcription of glutathione transferase (Ya+Yc) messenger RNAs. The half-life of cytochrome P-450 (b+e) messenger RNA was estimated to be 3–4 hr, whereas that for glutathione transferase (Ya+Yc) was found to be 8-9 hr. Administration of phenobarbitone enhanced the half-life of glutathione transferase (Ya+Yc) messenger RNA by nearly two fold. It is suggested that while transcription activation may play a primary role in the induction of cytochrome P-450 (b+e), the induction of glutathione transferase (Ya+Yc) may essentially involve stabilization of the messenger RNAs.

Resistance fluctuation at the mobility edge

Following a Migdal-Kadanoff-type bond moving procedure, we derive the renormalisation-group equations for the characteristic function of the full probability distribution of resistance (conductance) of a three-dimensional disordered system. The resulting recursion relations for the first two cumulants, K, the mean resistance and K ~ t,he meansquare deviation of resistance exhibit a mobility edge dominated by large dispersion, i.e., K $ ’/ K=, 1, suggesting inadequacy of the one-parameter scaling ansatz.

Infrared and Mössbauer spectroscopic study of the metal-insulator transition in some oxides of perovskite structure

The IR spectra of some LaNi1−xBxO3 (B = Cr, Fe, and Co) compounds having perovskite structure have been studied in the range 1000−300 cm−1. An investigation of the changes in the metal-oxygen stretching frequency as x → xc from the insulating side has been carried out. An important feature is that as x → xc the vibrational features in the infrared spectra disappear when the resistivity is not, vert, similar10−1 Ω cm which is of two orders of magnitude more than the value of varrho0 at which the temperature coefficient of resistance changes sign. Mössbauer studies on Fe-containing samples with various conductivities show that the isomer shift decreases as conductivity increases which is indicative of larger Fe---O overlap.

Possible application of carbon nanotube bundles for low temperature sensing

We report on the R-T measurement of carbon nanotube bundles from room temperature down to 1 K. The resistance at a particular temperature depends on the diameter of the bundle. The larger the bundle diameter is, the lower the value of the resistance. The resistance increases with the decrease in temperature as in the case of carbon, carbon glass resistance thermometer, and carbon nanotubes reported in the literature. The rate of the variation of resistance depends on the resistance of the bundle at room temperature which can be explored for the low temperature thermometry. Overall, the resistance and the sensitivity of the bundle depend on the bundle diameter which can be monitored easily.