Effect of Post-Deposition Annealing on the Al2O3/Si(100) Interface Properties

In the present investigation, Al2O3 thin films were deposited onto Si < 100 > substrates by DC reactive magnetron sputtering. The films were annealed in vacuum for one hour at 623, 823 and 1023 K. The composition of the films was quantitatively estimated using X-ray photoelectron spectroscopy (XPS) and the O/Al ratio was found be in the range 1.19 to 1.43. Grazing incidence X-ray diffraction (GIXRD) results revealed that the annealed films are amorphous in nature. Cross sectional transmission electron microscopy (X-TEM) analysis was carried out to study the microstructure and nature of the Al2O3-Si interface as a function of post-deposition annealing. TEM results revealed the presence of nanocrystalline gamma-Al2O3 in the annealed films and an amorphous interface layer was observed at the Al2O3 Si interface. The thickness of the amorphous interface layer was determined from the TEM analysis and the results are discussed.

Substitutional Self-Assembly of Alkanethiol and Selenol SAMs from a Lying-Down Doubly Tethered Butanedithiol SAM on Gold

Substitutional self-assembly of thiol and selenol SAMs from a lying-down phase of butanedithiol (C4DT) (SAM) were investigated using thiols, disulfide, and diselenide molecules. The intent was to address the question if formation of a lying-down dithiol phase is an impediment to formation of standing-up dithiol phases as it has been assumed. It is demonstrated that this is not the case, and the C4DT SAM, where both the sulfur atoms are chemisorbed on gold, is removed and replaced in all cases. Differences in substitution kinetics are observed.