Thermal activation parameters for low temperature deformation of alpha-hafnium

Abstract is not available.

Growth of hafnium and zirconium suicides by reactive diffusion

Diffusion controlled growth of the phases in Hf-Si and Zr-Si systems are studied by bulk diffusion couple technique. Only two phases grow in the interdiffusion zone, although several phases are present in both the systems. The location of the Kirkendall marker plane, detected based on the grain morphology, indicates that disilicides grow by the diffusion of Si. Diffusion of the metal species in these phases is negligible. This indicates that vacancies are present mainly on the Si sublattice. The activation energies for integrated diffusion coefficients in the HfSi2 and ZrSi2 are estimated as 394 +/- 37 and 346 +/- 34 kJ mol(-1), respectively. The same is calculated for the HfSi phase as 485 +/- 42 kJ mol(-1). The activation energies for Si tracer diffusion in the HfSi2 and ZrSi2 phases are estimated as 430 +/- 36 and 348 +/- 34 kJ mol(-1), respectively. (C) 2013 Elsevier B.V. All rights reserved.

Growth of hafnium and zirconium suicides by reactive diffusion

Diffusion controlled growth of the phases in Hf-Si and Zr-Si systems are studied by bulk diffusion couple technique. Only two phases grow in the interdiffusion zone, although several phases are present in both the systems. The location of the Kirkendall marker plane, detected based on the grain morphology, indicates that disilicides grow by the diffusion of Si. Diffusion of the metal species in these phases is negligible. This indicates that vacancies are present mainly on the Si sublattice. The activation energies for integrated diffusion coefficients in the HfSi2 and ZrSi2 are estimated as 394 +/- 37 and 346 +/- 34 kJ mol(-1), respectively. The same is calculated for the HfSi phase as 485 +/- 42 kJ mol(-1). The activation energies for Si tracer diffusion in the HfSi2 and ZrSi2 phases are estimated as 430 +/- 36 and 348 +/- 34 kJ mol(-1), respectively. (C) 2013 Elsevier B.V. All rights reserved.

Theoretical Studies on the Structure and Bonding of Metallacyclocumulenes, -cyclopentynes, and -cycloallenes

In this paper, we compare the electronic structure of the hafnacycloallene complex Cp(2)HfC(4)Rr'(2)R `' (5Hf), which was previously described by Erker et al., with those of the titanium, zirconium, and hafnium complexes Cp(2)M(eta(4)-RHC(4)HR) (3M; i.e. metallacyclopent-2,3,4-trienes, metallacyclocumulenes) and Cp(2)M(eta(2)-R(2)C(4)R(2)) (4M; i.e. 1-metallacyclopent-3-ynes) using density functional theory (BP86/LANL2DZ) calculations. Moreover, the eta(3)-phenylallenyl zirconocene complex 7Zr, which was synthesized by Wojcicki et al., is included for the comparison. These calculations and extended Huckel calculations show that the bonding in complex 5Hf is remarkably similar to that of complexes 4M and 7Zr. An analysis of the structural parameters and bonding reveals that the unique interaction of the internal carbon atoms along with the terminal carbon atoms with the bent-metallocene moiety is the reason for the unusual stability of these metallacycles. The molecular orbital analysis further suggests that complex 5Hf can react with another metal fragment to give the bimetallic complexes 9 and 10. The electronic structures of complexes 3M, 4M, 5Hf, and 7Zr have been comparatively studied to get a general understanding of the bonding in these metallacycles.

Evolution of microstructure and texture in Ni49.4Ti38.6Hf12 shape memory alloy during hot rolling

This paper deals with the evolution of microstructure and texture during hot rolling of hafnium containing NiTi based shape memory alloy Ni49.4Ti38.6Hf12. The formation of the R-phase has been associated with the precipitation of (Ti,Hf)(2)Ni phase. The crystallographic texture of the parent phase B2 as well as the product phases R and B19' have been determined. It has been found that the variant selection during the B2 -> R phase transformation is quite strong compared to the case of the B2 -> B19' transformation. During deformation, the texture of the austenite phase evolves with strong Goss and Bs components. After transformation to martensitic structure, it gives rise to a 011]parallel to RD fiber. Microstructure and texture studies reveal the occurrence of partial dynamic recrystallization during hot rolling. Large strain heterogeneities that occur surrounding (Ti,Hf)(2)Ni precipitates are relieved through extended dynamic recovery instead of particle stimulated nucleation.

Optimization of HfO2 films for high transconductance back gated graphene transistors

Hafnium dioxide (HfO2) films, deposited using electron beam evaporation, are optimized for high performance back-gated graphene transistors. Bilayer graphene is identified on HfO2/Si substrate using optical microscope and subsequently confirmed with Raman spectroscopy. Back-gated graphene transistor, with 32 nm thick HfO2 gate dielectric, has been fabricated with very high transconductance value of 60 mu S. From the hysteresis of the current-voltage characteristics, we estimate the trap density in HfO2 to be in the mid 10(11)/cm(2) range, comparable to SiO2.