18 resultados para Electro-optic effect

em Indian Institute of Science - Bangalore - Índia


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A study of the linear electro?optic effect in single crystals of the organic compound, 4?nitro�4??methylbenzylidene aniline is reported. The reduced half?wave voltages have been found to have values 2.8, 1.3, and 1.1 kV at 632.8, 514.5, and 488.0 nm, respectively and the corresponding values of the largest linear electro?optic coefficient have been calculated. The thermal variation of the birefringence has also been investigated and the temperature variation of the refractive index difference is found to have the value, d?n/dT = 15.8 × 10?5 K?1.

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The variation of the linear electro-optic effect in (-)-2-(alpha-methylbenzylamino)-5-nitropyridine with the wavelength of the incident light at room temperature has been measured. The reduced half-wave voltages have been found to have the values 2.1, 2.8, and 6.0 kV at 488, 514.5, and 632.8 nm respectively and the corresponding values of the linear electro-optic coefficient have been evaluated.;The interpretation of the results in terms of the structures of the molecule and the crystal is discussed. The thermal variation of the birefringence has also been investigated and the coefficient for the temperature variation of the refractive index difference is found to have the value (d Delta n/dT)=9.3X10(-5) K-1.

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We propose and demonstrate a technique for electrical detection of polarized spins in semiconductors in zero applied magnetic fields. Spin polarization is generated by optical injection using circularly polarized light which is modulated rapidly using an electro-optic cell. The modulated spin polarization generates a weak time-varying magnetic field which is detected by a sensitive radio-frequency coil. Using a calibrated pickup coil and amplification electronics, clear signals were obtained for bulk GaAs and Ge samples from which an optical spin orientation efficiency of 4.8% could be determined for Ge at 1342 nm excitation wavelength. In the presence of a small external magnetic field, the signal decayed according to the Hanle effect, from which a spin lifetime of 4.6 +/- 1.0 ns for electrons in bulk Ge at 127 K was extracted.

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Quadrature phase shift keying (QPSK) is one of the most popular modulation schemes in coherent optical communication systems for data rates in excess of 40 Gbps because of its high spectral efficiency. This paper proposes a simple method of implementing a QPSK modulator in integrated optic (IO) domain. The QPSK modulator is realized using standard IO components, such as Y-branches and electro-optic modulators (EOMs). Design optimization of EOM is carried out considering the fabrication constraints, miniaturization aspects, and simplicity. Also, the interdependency between electrode length, operating voltage, and electrode gap of an EOM has been captured in the form of a family of curves. These plots enable designing of EOMs for custom requirements. An innovative approach has been adopted in demonstrating the operation of IO QPSK modulator in terms of phase data extracted from beam propagation model. The results obtained by this approach have been verified using the conventional interferometric approach. The operation of the proposed IO QPSK modulator is experimentally demonstrated. The design of IO QPSK modulator is taken up as a part of a broader scheme that aims at generation of QPSK modulated microwave signal based on optical heterodyning. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)

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Organic polymeric electro-optic (E-O) materials have attracted significant attention because of their potential use as fast and efficient components of integrated photonic devices (1,2). However, the practical application of these materials in optical devices is somewhat limited by the stringent material requirements imposed by the device design, fabrication processes and operating environments. Among the various material requirements, the most notable ones are large electro-optic coefficients (r(33)) and high thermal stability (3). The design of poled polymeric materials with high electro-optic activity (r(33)) involves the optimization of the percent incorporation of efficient (large beta mu) second order nonlinear optical (NLO) chromophores into the polymer matrices and the effective creation of poling-induced non-centrosymmetric structures. The factors that affect the material stability are a) the inherent thermal stability of the NLO chromophores, b) the chemical stability of the NLO chromophores during the polymer processing conditions, and c) the long-term dipolar alignment stability at high temperatures. Although considerable progress has been made in achieving these properties (4), organic polymeric materials suitable for practical E-O device applications are yet to be developed. This chapter highlights some of our approaches in the optimization of molecular and material nonlinear optical and thermal properties.

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Recently, there has been growing interest in Ca modified BaTiO3 structures due to their larger electro-optic coefficients for their use in optical storage of information over conventional BaTiO3 crystals. Barium Calcium Titanate (BCT) shows promising applications in advanced laser systems, optical interconnects and optical storage devices. BaTiO3 thin films of varied Ca (3 at. % - 15 at. %) doping were deposited using pulsed laser ablation (KrF excimer laser) technique over Pt/Si substrates. The stoichiometric and the compositional analysis were carried out using EDAX and SIMS. The dielectric studies were done at the frequency regime of 40 Hz to 100 kHz at different ambient temperatures from 200 K to 600 K. The BCT thin films exhibited diffuse phase transition, which was of a typical non lead relaxor behavior and had high dielectric constant and low dielectric loss. The phase transition for the different compositions of BCT thin films was near the room temperature, showing a marked departure from the bulk phase transition. The C - V and the hysteresis behavior confirmed the ferroelectric nature below the phase transition and paraelectric at the room temperature.

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We demonstrate the effect of mechanical strain on the electrostrictive behavior of catalytically grown cellular structure of carbon nanotube (CNT). In the small strain regime, where the stress-strain behavior of the material is linear, application of an electric-field along the mechanical loading direction induces an instantaneous increase in the stress and causes an increase in the apparent Young's modulus. The instantaneous increase in the stress shows a cubic-polynomial dependence on the electric-field, which is attributed to the non-linear coupling of the mechanical strain and the electric-field induced polarization of the CNT. The electrostriction induced actuation becomes >100 times larger if the CNT sample is pre-deformed to a small strain. However, in the non-linear stress-strain regime, although a sharp increase in the apparent Young's modulus is observed upon application of an electric-field, no instantaneous increase in the stress occurs. This characteristic suggests that the softening due to the buckling of individual CNT compensates for any instantaneous rise in the electrostriction induced stress at the higher strains. We also present an analytical model to elucidate the experimental observations. (C) 2013 Elsevier Ltd. All rights reserved.

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Pt-supported La1-xSrxCoO3 and Pt-doped La1-xSrxCoO3 are synthesized using chemical reduction and solution combustion method, respectively. Chemical reduction is carried out using formaldehyde as a reducing agent giving Pt-supported La1-xSrxCoO3. Solution combustion method is used to prepare Pt-doped La1-xSrxCoO3. Detailed characterization using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET) surface area measurement, and transmission electron microscopy (TEM) is carried out to distinguish the Pt-supported and Pt-doped compounds in terms of their morphology and Pt oxidations states. TEM results indeed show the differences in their morphology. Further, electrochemical measurements are performed in neutral medium to differentiate their electrochemical activity. Cyclic voltammetry (CV) shows noticeable differences between Pt-supported La1-xSrxCoO3 and Pt-doped La1-xSrxCoO3. Importantly, our results show that Pt4+ in doped compound has poor to zero electrocatalytic activity toward formic acid and methanol electro-oxidation in comparison to Pt-0 in supported compound. This study shows that metallic Pt in zero oxidation state is a superior catalyst to Pt in +4 oxidation state.

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The optimum conditions for the electrode position of cobalt were arrived at, from a study of the effect or variables on the planning characteristics of cobalt flu borate solutions.

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Calcium-calcium fluoride melt was used to remove phosphorus from the ferro-chrome alloy (64.5 wt% Cr, 0.15 wt% P) during electro slag refining process. The effect of atmosphere and deoxidisers, viz. Al, Fe–Mo and misch metal were also studied during dephosphorisation reaction. The thermodynamic properties of Ca–CaF2 melt is calculated from a known phase diagram and these results are discussed in relation with the dephosphorisation reaction.

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Bulk As-Te-Tl glasses belonging to the As30Te70-xTlx (4 <= x <= 22) and As40Te60-xTlx (5 <= x <= 20) composition tie lines are studied for their I-V characteristics. Unlike other As-Te-III glasses such as As-Te-Al and As-Te-In, which exhibit threshold behavior, the present samples show memory switching. The composition dependence of switching voltages (V-t) of As-Te-Tl glasses is also different from that of As-Te-Al and As-Te-In glasses, and it is found that V-t decreases with the addition of Tl. Both the type of switching exhibited by As-Te-Tl glasses and the composition dependence of V-t, seems to be intimately connected with the nature of bonding of Tl atoms and the resultant structural network. Furthermore, the temperature and thickness dependence of switching voltages of As-Te-Tl glasses suggest an electro thermal mechanism for switching in these samples.

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Large-area PVDF thin films have been prepared and characterized for quasi-static and high frequency dynamic strain sensing applications. These films are prepared using hot press method and the piezoelectric phase (beta-phase) has been achieved by thermo-mechanical treatment and poling under DC field. The fabricated films have been characterized for quasi-static strain sensing and the linear strain-voltage relationship obtained is promising. In order to evaluate the ultrasonic sensing properties, a PZT wafer has been used to launch Lamb waves in a metal beam on which the PVDF film sensor is bonded at a distance. The voltage signals obtained from the PVDF films have been compared with another PZT wafer sensor placed on the opposite surface of the beam as a reference signal. Due to higher stiffness and higher thickness of the PZT wafer sensors, certain resonance patterns significantly degrade the sensor sensitivity curves. Whereas, the present results show that the large-area PVDF sensors can be superior with the signal amplitude comparable to that of PZT sensors and with no resonance-induced effect, which is due to low mechanical impedance, smaller thickness and larger area of the PVDF film. Moreover, the developed PVDF sensors are able to capture both A(0) and S-0 modes of Lamb wave, whereas the PZT sensors captures only A(0) mode in the same scale of voltage output. This shows promises in using large-area PVDF films with various surface patterns on structures for distributed sensing and structural health monitoring under quasi-static, vibration and ultrasonic situations. (C) 2010 Elsevier B.V. All rights reserved.

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It is pointed out that the change in refractive index with temperature of a crystal is different from what is calculated from the accompanying change in volume and the piezo-optic coefficients. The difference, which is a pure temperature effect, is explained as being due to the change in polarizability of the atoms produced by a change in the amplitude of vibration. The polarizability (α) can be expanded as a Taylor series in the changes of the distance (r) between the atoms and it is found that while the piezo-optic coefficient depends only on ∂α/∂r, the pure temperature effect is a function of ∂ 2 a/∂r 2. Making use of the experimental data, the values of a and its first two derivatives can be determined. These values are foundto be of the same order as those deduced from the intensities of Rayleigh and Raman scattering of light. The theory predicts that dn/dT should vary as the coefficient of cubical expansion at different temperatures and this is verified to be true. Finally, calculations are made of the thermo- and piezo-optic coefficients, considering the electrostatic interaction between the atoms. These do not adequately explain the observed facts, since no provision is made for the distortion of electron atmospheres around the atoms and the consequent changes in polarizability.

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Polycrystalline Ni-Zn ferrites with a well-defined composition of Ni0.4Zn0.6Fe2-xSbxO4 synthesized using sol-gel method. Morphological characterizations on the prepared samples were performed by high resolution transmission electron and field emission scanning electron microscopy. The powders were densified using microwave sintering method. The room temperature complex permittivity (epsilon' and epsilon aEuro(3)) and permeability (mu' and mu aEuro(3)) were measured over a wide frequency range from 1 MHz-1.8 GHz. The real part of permittivity varies as `x' concentration increases and the resonance frequency was observed at much higher frequencies and there is a significant decrease in the loss factor (tan delta). The electrical resistivity and permeability of NiZn ferrites increased with an increase of Sb content. As the concentration of `x' increases from 0 to 0.08 the saturation magnetisation decreases. The saturation magnetization (M-s) a parts per thousand aEuro parts per thousand 52.211 A.m(2)/Kg for x = 0 at room temperature. The room temperature electro paramagnetic resonance (EPR) were studied.

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A simple method to study the air bubble dynamics and to burst the air bubbles formed on the electrode– electrolyte interface in a parallel gate electrode fluidic channel is demonstrated. Upon application of a voltage across the electrodes,volume of water contained between them begins to electrolyzing depending on the conductivity, as well as it boils due to heating effect. This results in bubble formation within. These bubbles grow in radius with higher potential difference applied across the electrodes. As an approach towards removing these bubbles, an alternating current is applied at low potential difference of a 5 volts and high frequency at few megahertz. The alternating electric field had a heating effect on the bubbles where the energy input due to current heats up water and bursts the bubble. The bubbles of size up to 480μm were burst at 2500 V/m using this approach.