Effect of tolerance on the propagation characteristic of a superconducting thin film microstrip delay line

The propagation constant of a superconducting microstrip transmission delay line is evaluated using the spectral domain immitance approach, modelling the superconductor as a surface current having an equivalent surface impedance found through the complex resistive boundary condition. The sensitivity approach is used to study the beta variations with substrate parameters and film characteristics. Results show that the surface impedance does not have much influence on beta sensitivities with respect to epsilon r, W and h. However, it can be observed that the surface impedance plays a crucial role in determining the optimum design.

Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition

Substantial amount of fixed charge present in most of the alternative gate dielectrics gives rise to large shifts in the flat-band voltage (VFB) and charge trapping and de-trapping causes hysterectic changes on voltage cycling. Both phenomena affect stable and reliable transistor operation. In this paper we have studied for the first time the effect of post-metallization hydrogen annealing on the C-V curve of MOS capacitors employing zirconia, one of the most promising gate dielectric. Samples were annealed in hydrogen ambient for up to 30 minutes at different temperatures ranging from room temperature to 400°C. C-V measurements were done after annealing at each temperature and the hysteresis width was calculated from the C-V curves. A minimum hysteresis width of ∼35 mV was observed on annealing the sample at 200°C confirming the excellent suitability of this dielectric

Experimental investigation of die wear in small-batch hammer-forging under unlubricated conditions

Wear of dies is a serious problem in the forging industry. The materials used for the dies are generally expensive steel alloys and the dies require costly heat treatment and surface finishing operations. Degeneration of the die profile implies rejection of forged components and necessitates resinking or replacement of the die. Measures which reduce wear of the die can therefore aid in the reduction of production costs. The work reported here is the first phase of a study of the causes of die wear in forging production where the batch size is small and the machine employed is a light hammer. This is a problem characteristic of the medium and small scale area of the forging industry where the cost of dies is a significant proportion of the total capital investment. For the same energy input and under unlubricated conditions, die wear has been found to be sensitive to forging temperature; in cold forging the yield strength of the die material is the prime factor governing the degeneration of the die profile, whilst in hot forging the wear resistance of the die material is the main factor which determines the rate of die wear. At an intermediate temperature, such as that characteristic of warm forging, the die wear is found to be less than that in both cold and hot forging. This preliminary study therefore points to the fact that the forging temperature must be taken into account in the selection of die material. Further, the forging industry must take serious note of the warm forging process, as it not only provides good surface finish, as claimed by many authors, but also has an inherent tendency to minimize die wear.

Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis

We demonstrate a top-gated field effect transistor made of a reduced graphene oxide (RGO) monolayer (graphene) by dielectrophoresis. The Raman spectrum of RGO flakes of typical size of 5 mu m x 5 mu m shows a single 2D band at 2687 cm(-1), characteristic of single-layer graphene.The two-probe current-voltage measurements of RGO flakes, deposited in between the patterned electrodes with a gap of 2.5 mu m using ac dielectrophoresis, show ohmic behavior with a resistance of similar to 37 k Omega. The temperature dependence of the resistance (R) of RGO measured between 305 K and 393 K yields a temperature coefficient of resistance [dR/dT]/R similar to -9.5 x 10(-4)/K, the same as that of mechanically exfoliated single-layer graphene. The field-effect transistor action was obtained by electrochemical top-gating using a solid polymer electrolyte (PEO + LiClO4) and Pt wire. The ambipolar nature of graphene flakes is observed up to a doping level of similar to 6 x 10(12)/cm(2) and carrier mobility of similar to 50 cm(2)/V s. The source-drain current characteristics show a tendency of current saturation at high source-drain voltage which is analyzed quantitatively by a diffusive transport model. (C) 2010 Elsevier Ltd. All rights reserved.

A critical re-examination and a revised phase diagram of La1-xSrxCoO3

We report the results of a comprehensive study on dc magnetization, ac susceptibility, and the magnetotransport properties of the La1-xSrxCoO3(0 <= x <= 0.5) system. At higher Sr doping (x >= 0.18), the system exhibits Brillouin-like field cooled magnetization (M-FC). However, for x < 0.18, the system exhibits a kink in the M-FC, a peak at the intermediate field in the thermoremnant magnetization and a non-saturating tendency in the M-H plot that all point towards the characteristic of spin glass behavior. More interestingly, dc magnetization studies for x < 0.18 do not suggest the existence of ferromagnetic correlation that can give rise to an irreversible line in the spin glass regime. The ac susceptibility study for x > 0.2 exhibits apparently no frequency dependent peak shift around the ferromagnetic transition region. However, a feeble signature of glassiness is verified by studying the frequency dependent shoulder position in chi `' (T) and the memory effect below the Curie temperature. But, for x < 0.18, the ac susceptibility study exhibits a considerable frequency dependent peak shift, time dependent memory effect, and the characteristic spin relaxation time scale tau(0) similar to 10(-13) s. The reciprocal susceptibility versus temperature plot adheres to Curie-Weiss behavior and does not provide any signature of preformed ferromagnetic clusters well above the Curie temperature. The magnetotransport study reveals a cross over from metallic to semiconducting-like behavior for x <= 0.18. On the semiconducting side, the system exhibits a large value of magnetoresistance (upto 75%) towards low temperature and it is strongly connected to the spin dependent part of the random potential distribution in the spin glass phase. Based on the above observations, we have reconstructed a new magnetic phase diagram and characterized each phase with associated properties.

Determination of surge-diverter voltage/current characteristic

A mathematical model has been proposed to determine the voltage/current characteristic of the surge diverter for a wide range of currents of short duration of 8/20 and 4/10ÿs waveshapes. Experimental data agree well with the proposed model.