Synthesis of nanoparticles of the giant dielectric material, CaCu3Ti4O12 from a precursor route

A complex oxalate precursor, CaCu3(TiO)(4)(C2O4)(8)center dot 9H(2)O, (CCT-OX), was synthesized and the precipitate that obtained was confirmed to be monophasic by the wet chemical analyses, X-ray diffraction, FTIR absorption and TG/DTA analyses. The thermal decomposition of this oxalate precursor led to the formation of phase-pure calcium copper titanate, CaCu3Ti4O12, (CCTO) at a parts per thousand yen680A degrees C. The bright-field TEM micrographs revealed that the size of the as synthesized crystallites to be in the 30-80 nm range. The powders so obtained had excellent sinterability resulting in high density ceramics which exhibited giant dielectric constants upto 40000 (1 kHz) at 25A degrees C, accompanied by low dielectric losses.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

State Transition Based Embedding in Cepstrum Domain for Audio Copyright Protection

In this paper, we propose a new state transition based embedding (STBE) technique for audio watermarking with high fidelity. Furthermore, we propose a new correlation based encoding (CBE) scheme for binary logo image in order to enhance the payload capacity. The result of CBE is also compared with standard run-length encoding (RLE) compression and Huffman schemes. Most of the watermarking algorithms are based on modulating selected transform domain feature of an audio segment in order to embed given watermark bit. In the proposed STBE method instead of modulating feature of each and every segment to embed data, our aim is to retain the default value of this feature for most of the segments. Thus, a high quality of watermarked audio is maintained. Here, the difference between the mean values (Mdiff) of insignificant complex cepstrum transform (CCT) coefficients of down-sampled subsets is selected as a robust feature for embedding. Mdiff values of the frames are changed only when certain conditions are met. Hence, almost 50% of the times, segments are not changed and still STBE can convey watermark information at receiver side. STBE also exhibits a partial restoration feature by which the watermarked audio can be restored partially after extraction of the watermark at detector side. The psychoacoustic model analysis showed that the noise-masking ratio (NMR) of our system is less than -10dB. As amplitude scaling in time domain does not affect selected insignificant CCT coefficients, strong invariance towards amplitude scaling attacks is also proved theoretically. Experimental results reveal that the proposed watermarking scheme maintains high audio quality and are simultaneously robust to general attacks like MP3 compression, amplitude scaling, additive noise, re-quantization, etc.

One pot auto-ignition based synthesis of novel Sr2CeO4: Ho3+ nanophosphor for photoluminescent applications

Ho3+ (0.25-7 mol%) doped Sr2CeO4 nanophosphors were synthesized by solution combustion method using urea as fuel. The structural properties of the nanophosphors were investigated by powder X-ray diffraction studies (PXRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. UV-Visible and photoluminescence (PL) spectroscopic techniques were used for analysing the optical properties of the nanoparticles. PXRD and TEM results revealed the formation of Sr2CeO4: Ho3+ nanocrystalline particles with orthorhombic crystal structure. From the UV-Vis studies the optical band gap energy found to decrease from 5.9 to 5.74 eV with increase in dopant concentration. The PL spectra exhibit the broad excitation band from 200 to 400 nm which concurs well with the commercial near UV LED. The PL spectra vary with the dopant content due to energy transfer from the host to the activator. In this present work we demonstrate that color tuning of phosphor can be achieved by merely varying the Ho3+ ions concentration. The CIE and CCT chromaticity coordinates suggests Sr2CeO4: Ho3+ nanophosphors may be potentially applicable as promising single - phased phosphors for lighting applications. (C) 2015 Elsevier B.V. All rights reserved.

Experimental characterisation and performance evaluation of a coaxial current transformer for measurement of insulated gate bipolar transistor switching current

Measurement of device current during switching characterisation of an insulated gate bipolar transistor (IGBT) requires a current sensor with low insertion impedance and high bandwidth. This study presents an experimental procedure for evaluating the performance of a coaxial current transformer (CCT), designed for the above purpose. A prototype CCT, which can be mounted directly on a power terminal of a 1200 V/50 A half-bridge IGBT module, is characterised experimentally. The measured characteristics include insertion impedance, gain and phase of the CCT at different frequencies. The bounds of linearity within which the CCT can operate without saturation are determined theoretically, and are also verified experimentally. The experimental study on linearity of the CCT requires a high-amplitude current source. A proportional-resonant (PR) controller-based current-controlled half-bridge inverter is developed for this purpose. A systematic procedure for selection of PR controller parameters is also reported in this study. This set-up is helpful to determine the limit of linearity and also to measure the frequency response of the CCT at realistic amplitudes of current in the low-frequency range.