Pressure Dependence of Glass Transition in As2Te3 Glass

Amorphous solids prepared from their melt state exhibit glass transition phenomenon upon heating. Viscosity, specific heat, and thermal expansion coefficient of the amorphous solids show rapid changes at the glass transition temperature (T-g). Generally, application of high pressure increases the T-g and this increase (a positive dT(g)/dP) has been understood adequately with free volume and entropy models which are purely thermodynamic in origin. In this study, the electrical resistivity of semiconducting As2Te3 glass at high pressures as a function of temperature has been measured in a Bridgman anvil apparatus. Electrical resistivity showed a pronounced change at T-g. The T-g estimated from the slope change in the resistivity-temperature plot shows a decreasing trend (negative dT(g)/dP). The dT(g)/dP was found to be -2.36 degrees C/kbar for a linear fit and -2.99 degrees C/kbar for a polynomial fit in the pressure range 1 bar to 9 kbar. Chalcogenide glasses like Se, As2Se3, and As30Se30Te40 show a positive dT(g)/dP which is very well understood in terms of the thermodynamic models. The negative dT(g)/dP (which is generally uncommon in liquids) observed for As2Te3 glass is against the predictions of the thermodynamic models. The Adam-Gibbs model of viscosity suggests a direct relationship between the isothermal pressure derivative of viscosity and the relaxational expansion coefficient. When the sign of the thermal expansion coefficient is negative, dT(g)/dP = Delta k/Delta alpha will be less than zero, which can result in a negative dT(g)/dP. In general, chalcogenides rich in tellurium show a negative thermal expansion coefficient (NTE) in the supercooled and stable liquid states. Hence, the negative dT(g)/dP observed in this study can be understood on the basis of the Adams-Gibbs model. An electronic model proposed by deNeufville and Rockstad finds a linear relation between T-g and the optical band gap (E-g for covalent semiconducting glasses when they are grouped according to their average coordination number. The electrical band gap (Delta E) of As2Te3 glass decreases with pressure. The optical and electrical band gaps are related as Delta E-g = 2 Delta E; thus, a negative dT(g)/dP is expected when As2Te3 glass is subjected to high pressures. In this sense, As2Te3 is a unique glass where its variation of T-g with pressure can be understood by both electronic and thermodynamic models.

EXAFS studies of arsenic chalcogenide glasses

An EXAFS study at the AsK edge of the ternary glasses As2(S, Se)3 and As2(Se, Te)3 and the binary As2S3, As2Se3 and As2Te3 glasses has been carried out. Radial structure functions show that the environment of As in glasses of intermediate compositions is quite different from that in the binary glasses. In the As2(S, Se)3 system, this might arise from chemical disorder in the network while in the As2(Se, Te)3 system increased ionicity could be the cause of this behaviour. Glasses where the constituent atoms are of similar size seem to exhibit fewer peaks in the radial structure function.

Study of As2(Se,Te)3 glasses by X-ray absorption and photoelectron spectroscopy

Arsenic selenide-telluride glasses have been investigated by X-ray absorption and photoelectron spectroscopy. The core electron energy shifts and chemical shifts in K-absorption edge measurements associated with the glass-crystal transitions of pure As2Se3 and As2Te3 have been studied. The effect of composition on the core level energy and valence bands of As2(Se,Te)3 glasses, has been discussed. Mixed-composition glasses are found to be considerably ionic.