A Novel Cache Architecture and Placement Framework for Packet Forwarding Engines

Packet forwarding is a memory-intensive application requiring multiple accesses through a trie structure. With the requirement to process packets at line rates, high-performance routers need to forward millions of packets every second with each packet needing up to seven memory accesses. Earlier work shows that a single cache for the nodes of a trie can reduce the number of external memory accesses. It is observed that the locality characteristics of the level-one nodes of a trie are significantly different from those of lower level nodes. Hence, we propose a heterogeneously segmented cache architecture (HSCA) which uses separate caches for level-one and lower level nodes, each with carefully chosen sizes. Besides reducing misses, segmenting the cache allows us to focus on optimizing the more frequently accessed level-one node segment. We find that due to the nonuniform distribution of nodes among cache sets, the level-one nodes cache is susceptible t high conflict misses. We reduce conflict misses by introducing a novel two-level mapping-based cache placement framework. We also propose an elegant way to fit the modified placement function into the cache organization with minimal increase in access time. Further, we propose an attribute preserving trace generation methodology which emulates real traces and can generate traces with varying locality. Performanc results reveal that our HSCA scheme results in a 32 percent speedup in average memory access time over a unified nodes cache. Also, HSC outperforms IHARC, a cache for lookup results, with as high as a 10-fold speedup in average memory access time. Two-level mappin further enhances the performance of the base HSCA by up to 13 percent leading to an overall improvement of up to 40 percent over the unified scheme.

The physics and technology of gallium antimonide: An emerging optoelectronic material

Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 mu m. The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication. (C) 1997 American Institute of Physics.

Training Young Minds for Nanoscience and Technology: Issues and Challenges

This article explores issues and challenges in the field of education in nanoscience and technology with special emphasis with respect to India, where an expanding programme of research in nano science and technology is in place. The article does not concentrate on actual curricula that are needed in nano science and technology education course. Rather it focuses on the desirability of nanoscience and technology education at different levels of education and future prospect of students venturing into this within the economic and cultural milieu of India. We argue that care is needed in developing the education programme in India. However, the risk is worth taking as the education on nanoscience and technology can bridge the man power gap not only in this area of technology but also related technologies of hardware and micro electronics for which the country is a promising destination at global level. This will also unlock the demographical advantage that India will enjoy in the next five decades.

Perspectives on Titanium Science and Technology

The basic framework and - conceptual understanding of the metallurgy of Ti alloys is strong and this has enabled the use of titanium and its alloys in safety-critical structures such as those in aircraft and aircraft engines. Nevertheless, a focus on cost-effectiveness and the compression of product development time by effectively integrating design with manufacturing in these applications, as well as those emerging in bioengineering, has driven research in recent decades towards a greater predictive capability through the use of computational materials engineering tools. Therefore this paper focuses on the complexity and variety of fundamental phenomena in this material system with a focus on phase transformations and mechanical behaviour in order to delineate the challenges that lie ahead in achieving these goals. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Making consistent contacts to graphene: effect of architecture and growth induced defects

The effects of contact architecture, graphene defect density and metal-semiconductor work function difference on the resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to yield resistivities that are lower, by a factor of four, and most consistent as compared to metal on top of graphene. Growth defects in graphene film were found to further reduce resistivity by a factor of two. Using a combination of method and metal used, the contact resistivity of graphene has been decreased by a factor of 10 to 1200. +/-. 250 Omega mu m using palladium as the contact metal. While the improved consistency is due to the metal being able to contact uncontaminated graphene in the metal on the bottom architecture, lower contact resistivities observed on defective graphene with the same metal are attributed to the increased number of modes of quantum transport in the channel.