A general geomorphological recession flow model for river basins

Recession flows in a basin are controlled by the temporal evolution of its active drainage network (ADN). The geomorphological recession flow model (GRFM) assumes that both the rate of flow generation per unit ADN length (q) and the speed at which ADN heads move downstream (c) remain constant during a recession event. Thereby, it connects the power law exponent of -dQ/dt versus Q (discharge at the outlet at time t) curve, , with the structure of the drainage network, a fixed entity. In this study, we first reformulate the GRFM for Horton-Strahler networks and show that the geomorphic ((g)) is equal to D/(D-1), where D is the fractal dimension of the drainage network. We then propose a more general recession flow model by expressing both q and c as functions of Horton-Strahler stream order. We show that it is possible to have = (g) for a recession event even when q and c do not remain constant. The modified GRFM suggests that is controlled by the spatial distribution of subsurface storage within the basin. By analyzing streamflow data from 39 U.S. Geological Survey basins, we show that is having a power law relationship with recession curve peak, which indicates that the spatial distribution of subsurface storage varies across recession events. Key Points The GRFM is reformulated for Horton-Strahler networks. The GRFM is modified by allowing its parameters to vary along streams. Sub-surface storage distribution controls recession flow characteristics.

A Simple Hysteretic Energy Harvesting Method for Nonneutral AC Switches in Load Automation

This paper presents a simple hysteretic method to obtain the energy required to operate the gate-drive, sensors, and other circuits within nonneutral ac switches intended for use in load automated buildings. The proposed method features a switch-mode low part-count self-powered MOSFET ac switch that achieves efficiency and load current THD figures comparable to those of an externally gate-driven switch built using similar MOSFETS. The fundamental operation of the method is explained in detail, followed by the modifications required for practical implementation. Certain design rules that allow the method to accommodate a wide range of single-phase loads from 10 VA to 1 kVA are discussed, along with an efficiency enhancement feature based on inherent MOSFET characteristics. The limitations and side effects of the method are also mentioned according to their levels of severity. Finally, experimental results obtained using a prototype sensor switch are presented, along with a performance comparison of the prototype with an externally gate-driven MOSFET switch.