24 resultados para 249903 Instruments and Techniques

em Indian Institute of Science - Bangalore - Índia


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It is well known that the use of a series of resistors, connected between the equipotential rings of a Van de Graaff generator, improves the axial voltage grading of the generator. The work reported in this paper shows how the resistor chain also improves the radial voltage gradient. The electrolytic field mapping technique was adopted in the present work.

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A brief review on the design aspects of the structural, optical and thermal subsystems of parabolic trough concentrators is given. Existing methods of performance evaluation and techniques to improve their performance are also discussed.

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The basic concepts and techniques involved in the development and analysis of mathematical models for individual neurons and networks of neurons are reviewed. Some of the interesting results obtained from recent work in this field are described. The current status of research in this field in India is discussed

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Role of swift heavy ion irradiation on the modification of transport and structural properties of high temperature superconductors is studied. Good quality YBCO thin films prepared by high pressure oxygen sputtering and laser ablation were used in this investigation. Resistivity and atomic force microscopy (AFM) were mainly used to probe superconducting and microstructural modifications resulted from the irradiation of high energy and heavy ions like 100 MeV oxygen and 200 MeV silver. Radiation induced sputtering or erosion is likely to be a major disastrous component of such high energy irradiation that could be powerful in masking phase coherence effects, atleast in grain boundaries. The extent of damage/nature of defects other than columnar defects produced by swift heavy ions is discussed in the light of AFM measurements. The effect of high energy oxygen ion irradiation is anomalous. A clear annealing effect at higher doses is seen. (C) 1999 Elsevier Science B.V. All rights reserved.

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A systematic study of Ar ion implantation in cupric oxide films has been reported. Oriented CuO films were deposited by pulsed excimer laser ablation technique on (1 0 0) YSZ substrates. X-ray diffraction (XRD) spectra showed the highly oriented nature of the deposited CuO films. The films were subjected to ion bombardment for studies of damage formation, Implantations were carried out using 100 keV Arf over a dose range between 5 x 10(12) and 5 x 10(15) ions/cm(2). The as-deposited and ion beam processed samples were characterized by XRD technique and resistance versus temperature (R-T) measurements. The activation energies for electrical conduction were found from In [R] versus 1/T curves. Defects play an important role in the conduction mechanism in the implanted samples. The conductivity of the film increases, and the corresponding activation energy decreases with respect to the dose value.

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The dispersion characteristics of the dominant and higher order modes in unilateral firdines on uniaxially anisotropic substrates have been obtained. The solution has been obtained by applying the equivalent transmission-line concept in the spectral domain and by using Galerkhr’s method. Numericaf results for the propagation constant as a function of the slot-width ratio and freqnency are presented.

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The lead based ferroelectric PbZr0.53Ti0.47O3 (PZT), (Pb0.90La0.10)TiO3 (PLT10) and (Pb0.80La0.20)TiO3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C- V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 degrees C for 10 min. The phase transition temperature [T-c] of PLT20 increased from 115 degrees C to 120 degrees C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 degrees C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation. (C) 2007 Elsevier B.V. All rights reserved.

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The dispersion and impedance characteristics of an inverted slot-mode (ISM) slow-wave structure computed by three different techniques, i.e., an analytical model based on a periodic quasi-TEM approach, an equivalent-circuit model, and 3-D electromagnetic simulation are obtained and compared. The comparison was carried out for three different slot-mode structures at S-, C-, and X-bands. The approach was also validated with experimental measurements on a practical X-band ISM traveling-wave tube. The design of ferruleless ISM slow-wave structures, both in circular and rectangular formats, has also been proposed and the predicted dispersion characteristics for these two geometries are compared with 3-D simulation and cold-test measurements. The impedance characteristics for all three designs are also compared.

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The ferroelectric Pb(Zr0.48Ti0.52)O-3 (PZT) thin films prepared by the pulsed laser deposition technique were studied for their response to high energy lithium ion irradiation through impedance spectroscopy. The Debye peaks, observed in the impedance and modulus plots of irradiatedfilms, shifts towards higher frequencies compared to those of unirradiated films. This is equivalent to the trend observed with increase in temperature in the unirradiated films due to the dielectric relaxation. The irradiated films showed a decrease in the grain resistance compared to the unirradiated films. The activation energy of dielectric relaxation increases from 1.25 eV of unirradiated film to 1.62 eV of irradiated film. The observed modifications in the irradiated film were ascribed to the modifications in the grain structure due to the high value of electronic energy loss.

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Counting-rate meters normally used for finding pulse frequencies are sluggish in their response to any rapid change in the pulse repetition frequency (P.R.F.). An instrument is described which measures each pulse interval and provides immediately afterwards an output voltage proportional to the reciprocal of interval duration. A response to a change in the P.R.F. as rapidly as is physically possible is obtained. The instrument has wide application in low level radiation detection and in several other fields especially for rapidly varying counting-rates.