126 resultados para extractable boron


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The present study elucidates the effects of nanoscale boron nitride particles addition on the microstructural and mechanical characteristics of monolithic magnesium. Novel light-weight Mg nanocomposites containing 0.3, 0.6 and 1.2vol% nano-size boron nitride particulates were synthesized using the disintegrated melt deposition method followed by hot extrusion. Microstructural characterization of developed Mg/x-boron nitride composites revealed significant grain refinement due to the uniform distribution of nano-boron nitride particulates. Texture analysis of selected Mg-1.2 boron nitride nanocomposite showed an increase in the intensity of fiber texture alongside enhanced localized recrystallization when compared to monolithic Mg. Mechanical properties evaluation under indentation, tension and compression loading indicated superior response of Mg/x-boron nitride composites in comparison to pure Mg. The uniform distribution of nanoscale boron nitride particles and the modified crystallographic texture achieved due to the nano-boron nitride addition attributes to the superior mechanical characteristics of Mg/boron nitride nanocomposites.

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The addition of small amount of boron to Ti and it alloys refines the as-cast microstructure and enhances the mechanical properties. In this paper, we employ nanoindentation on each of the constituent phases in the microstructure and `rule-of-mixture' type analysis to examine their relative contributions to the strength enhancement in a Ti-6Al-4V alloy modified with 0.3 wt% B. Our results indicate to two main contributors to the relatively higher flow strength of B-modified alloy vis-a-vis the base alloy: (a) strengthening of alpha phase due to the reduction in the effective slip length that occurs as a result of the microstructural refinement that occurs upon B addition, and (b) composite strengthening caused by the TiB whiskers present in the alloy. (C) 2015 Elsevier B.V. All rights reserved.

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Three new triarylborane conjugated dicyanovinyl chromophores (Mes(2)B-pi-donor-DCV); donor: N-methyldiphenylamine (1) and triphenylamine (2 and 3 with two BMes(2) substitutions]) of type A-D-A (acceptor-donor- acceptor) are reported. Compounds 1-3 exhibit intense charge transfer (CT) absorption bands in the visible region. These absorption peaks are combination CT bands of the amine donor to both the BMes(2) and DCV units. This inference was supported by theoretical studies. Compound 1 shows weak fluorescence compared to 2 and 3. The discrimination of fluoride and cyanide ions is essential in the case of triarylborane (TAB) based anion sensors as a similar response is given towards both the anions. Anion binding studies of 1, 2 and 3 showed that fluoride ions bind selectively to the boron centre and block the corresponding CT transition (donor to BMes(2)) leaving the other CT transition to be red shifted. On the other hand, cyanide ions bind with both the receptor sites and stop both the CT transition processes and hence a different colorimetric response was noted. The binding of F-/CN- induces colour changes in the visible region of the electronic spectra of 2 and 3, which allows for the naked-eye detection of F- and CN- ions. The anion binding mechanisms are established using NMR titration experiments.

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The emergence of multiple Dirac cones in hexagonal boron nitride (hBN)-graphene heterostructures is particularly attractive because it offers potentially better landscape for higher and versatile transport properties than the primary Dirac cone. However, the transport coefficients of the cloned Dirac cones is yet not fully characterized and many open questions, including the evolution of charge dynamics and impurity scattering responsible for them, have remained unexplored. Noise measurements, having the potential to address these questions, have not been performed to date in dual-gated hBN graphene hBN devices. Here, we present the low frequency 1/f noise measurements at multiple Dirac cones in hBN encapsulated single and bilayer graphene in dual-gated geometry. Our results reveal that the low-frequency noise in graphene can be tuned by more than two-orders of magnitude by changing carrier concentration as well as by modifying the band structure in bilayer graphene. We find that the noise is surprisingly suppressed at the cloned Dirac cone compared to the primary Dirac cone in single layer graphene device, while it is strongly enhanced for the bilayer graphene with band gap opening. The results are explained with the calculation of dielectric function using tight-binding model. Our results also indicate that the 1/f noise indeed follows the Hooge's empirical formula in hBN-protected devices in dual-gated geometry. We also present for the first time the noise data in bipolar regime of a graphene device.

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We report on the fabrication and observation of emergent opto-electronic phenomena in three dimensional, micron-sized van der Waals heterostructures self-assembled from atomic layers of graphene and hexagonal boron nitride in varying ratios.

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The design and synthesis of two structurally close and complementarily fluorescent boron based molecular siblings 2 and 3 are reported. The luminescence properties of individual triads are modulated to complement each other by controlling the intramolecular energy transfer in 2 and 3. The binary mixture of 2 and 3 emits white-light.