Studies on RF Magnetron Sputtered HfO2 Thin Films for Microelectronic Applications

We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compositional, structural, optical and electrical properties of HfO2 films. We also studied the influence of annealing temperature on the structural and electrical properties of optimized HfO2 films of 25 to 30 nm thick. X-ray photoelectron study reveals that the films deposited at 15 SCCM of oxygen flow rate are stoichiometric and have an optical band gap of 5.86 eV. X-ray diffraction indicates that films without oxygen flow are amorphous, and beyond an oxygen flow rate of 5 SCCM exhibit polycrystalline monoclinic structure. At an annealing temperature of 600 degrees C, tetragonal phase was observed besides the monoclinic phase. The dielectric constant of 11 and low leakage currents of 1 x 10(-7) A/cm(2) were achieved for the stoichiometric films. As-deposited films show significant frequency dispersion due to the presence of defect states at the HfO2/Si interface, and it reduces after annealing.

Dopant-configuration controlled carrier scattering in graphene

Controlling optical and electronic properties of graphene via substitutional doping is central to many fascinating applications. Doping graphene with boron (B) or nitrogen (N) has led to p- or n-type graphene; however, the electron mobility in doped-graphene is severely compromised due to increased electron-defect scattering. Here, we demonstrate through Raman spectroscopy, nonlinear optical and ultrafast spectroscopy, and density functional theory that the graphitic dopant configuration is stable in graphene and does not significantly alter electron-electron or electron-phonon scattering, that is otherwise present in doped graphene, by preserving the crystal coherence length (L-a).

Damage Detection Sensitivity, Specificity and Classification Data Analysis for SHM Systems Design, Verification and Validation

In this paper, we consider applying derived knowledge base regarding the sensitivity and specificity of damage(s) to be detected by an SHM system being designed and qualified. These efforts are necessary toward developing capabilities in SHM system to classify reliably various probable damages through sequence of monitoring, i.e., damage precursor identification, detection of damage and monitoring its progression. We consider the particular problem of visual and ultrasonic NDE based SHM system design requirements, where the damage detection sensitivity and specificity data definitions for a class of structural components are established. Methodologies for SHM system specification creation are discussed in details. Examples are shown to illustrate how the physics of damage detection scheme limits particular damage detection sensitivity and specificity and further how these information can be used in algorithms to combine various different NDE schemes in an SHM system to enhance efficiency and effectiveness. Statistical and data driven models to determine the sensitivity and probability of damage detection (POD) has been demonstrated for plate with varying one-sided line crack using optical and ultrasonic based inspection techniques.