Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

Titanium dioxide thin films were deposited by RF reactive magnetron sputtering technique on p-type silicon(100) substrates held at temperatures in the range 303-673 K. The influence of substrate temperature on the core level binding energies, chemical bonding configuration, crystallographic structure and dielectric properties was investigated. X-ray photoelectron spectroscopy studies and Fourier transform infrared transmittance data confirmed the formation of stoichiometric films with anatase phase at a substrate temperature of 673 K. The films formed at 303 K were nanocrystalline with amorphous matrix while those deposited at 673 K were transformed in to crystalline phase and growth of grains in pyramidal like structure as confirmed by X-ray diffraction and atomic force microscopy respectively. Metal-oxide-semiconductor capacitors were fabricated with the configuration of Al/TiO2/Si structures. The current voltage, capacitance voltage and conductance voltage characteristics were studied to understand the electrical conduction and dielectric properties of the MOS devices. The leakage current density (at gate voltage of 2 V) decreased from 2.2 x 10(-6) to 1.7 x 10(-7) A/cm(2), the interface trap density decreased from 1.2 x 10(13) to 2.1 x 10(12) cm(-2) eV(-1) and the dielectric constant increased from 14 to 36 with increase of substrate temperature from 303 to 673 K.

Phase Inversion of Agitated Liquid-Liquid Dispersions in the Presence of Micrometer-Sized Particles

We have investigated the impact of partially wetting particles of tens of micrometers on inversion instability of agitated liquid liquid dispersions. Particles of this size can be easily separated from the exit streams to avoid downstream processing-related issues. The results show that the presence of hydrophilic particles in small quantities (volume fraction range of 2 X 10(-4) to 1.25 x 10(-2)) significantly decreases the dispersed phase fraction at which water-in-oil (w/o) dispersions invert but leaves the inversion of oil-in-water (o/w) dispersions nearly unaffected. The addition of the same particles after they are hydrophobized decreases the dispersed phase fraction at which o/w dispersions invert but leaves the inversion of w/o dispersions unaffected. These findings suggest an increased rate of coalescence of drops when particles wet drops preferentially and a marginal decrease when they wet the continuous phase preferentially. High-speed conductivity measurements on w/o dispersion show transient conduction of a few hundred milliseconds duration through voltage pulses. Close to the inversion point, voltage pulses appear at high frequency for even 7 cm separation between the electrodes. The presence of hydrophilic particles produces a nearly identical signal at a significantly lower dispersed phase fraction itself, close to the new lowered inversion point in the presence of particles. We propose formation of elongated domains of the conducting dispersed phase through a rapid coalescence-deformation-breakup process to explain the new observations. The voltage signal appears as a forerunner of inversion instability.

Amine Functionalized polyaniline grafted to exfoliated graphite oxide: Synthesis, characterization and multi-element sensor studies

An amine functionalized polyaniline (AMPANI) derivative has been grafted onto exfoliated graphite oxide (EGO). The synthesis involved the in-situ chemical oxidative polymerization of functionalized aniline monomer in the presence of EGO with diaminobenzene acting as a bridging ligand to yield EGAMPANI. The synthesized compound was characterized by FT-IR and FT-Raman spectroscopy as well as thermogravimetric and X-ray diffraction analysis. The EGAMPANI was then used to modify a carbon paste electrode (CPE), which was applied for multi-elemental sensing of Pb2+, Cd2+ and Hg2+ ions using differential pulse anodic stripping voltammetty. The limits of detection achieved using the EGAMPANI modified CPE were 22 x 10(-6) M for Hg2+ ion, 1.2 x 10(-6) M for Cd2+ ion and 9.8 x 10(-7) M for Pb2+ ion. (C) 2015 Elsevier B.V. All rights reserved.

Solution processible Cu2SnS3 thin films for cost effective photovoltaics: Characterization

Thin films of Cu2SnS3 (CTS) were deposited by the facile solution processed sol-gel route followed by a low-temperature annealing. The Cu-Sn-thiourea complex formation was analysed using Fourier Transform Infrared spectrophotometer (FTIR). The various phase transformations and the deposition temperature range for the initial precursor solution was determined using Thermogravimetric analysis (TGA) and Differential Scanning Calorimetry (DSC). X-Ray Diffraction (XRD) studies revealed the tetragonal phase formation of the CTS annealed films. Raman spectroscopy studies further confirmed the tetragonal phase formation and the absence of any deterioratory secondary phases. The morphological investigations and compositional analysis of the films were determined using Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS) respectively. Atomic Force Microscopy (AFM) was used to estimate the surface roughness of 1.3 nm. The absorption coefficient was found to be 10(4) cm(-1) and bandgap 1.3 eV which qualifies CTS to be a potential candidate for photovoltaic applications. The refractive index, extinction coefficient and relative permittivity of the film were measured by Spectroscopic ellipsometry. Hall effect measurements, indicated the p type nature of the films with a hole concentration of 2 x 10(18) cm(-3), electrical conductivity of 9 S/cm and a hole mobility of 29 cm(2)/V. The properties of CTS as deduced from the current study, present CTS as a potential absorber layer material for thin film solar cells. (C) 2015 Elsevier B.V. All rights reserved.

Upper bound on cubicity in terms of boxicity for graphs of low chromatic number

The boxicity (respectively cubicity) of a graph G is the least integer k such that G can be represented as an intersection graph of axis-parallel k-dimensional boxes (respectively k-dimensional unit cubes) and is denoted by box(G) (respectively cub(G)). It was shown by Adiga and Chandran (2010) that for any graph G, cub(G) <= box(G) log(2) alpha(G], where alpha(G) is the maximum size of an independent set in G. In this note we show that cub(G) <= 2 log(2) X (G)] box(G) + X (G) log(2) alpha(G)], where x (G) is the chromatic number of G. This result can provide a much better upper bound than that of Adiga and Chandran for graph classes with bounded chromatic number. For example, for bipartite graphs we obtain cub(G) <= 2(box(G) + log(2) alpha(G)] Moreover, we show that for every positive integer k, there exist graphs with chromatic number k such that for every epsilon > 0, the value given by our upper bound is at most (1 + epsilon) times their cubicity. Thus, our upper bound is almost tight. (c) 2015 Elsevier B.V. All rights reserved.

Simple crystallizations of 4-manifolds

Minimal crystallizations of simply connected PL 4-manifolds are very natural objects. Many of their topological features are reflected in their combinatorial structure which, in addition, is preserved under the connected sum operation. We present a minimal crystallization of the standard PL K3 surface. In combination with known results this yields minimal crystallizations of all simply connected PL 4-manifolds of ``standard'' type, that is, all connected sums of CP2, S-2 x S-2, and the K3 surface. In particular, we obtain minimal crystallizations of a pair of homeomorphic but non-PL-homeomorphic 4-manifolds. In addition, we give an elementary proof that the minimal 8-vertex crystallization of CP2 is unique and its associated pseudotriangulation is related to the 9-vertex combinatorial triangulation of CP2 by the minimum of four edge contractions.

Experimental solubilities of two lipid derivatives in supercritical carbon dioxide and new correlations based on activity coefficient models

The solubilities of two lipid derivatives, geranyl butyrate and 10-undecen-1-ol, in SCCO2 (supercritical carbon dioxide) were measured at different operating conditions of temperature (308.15 to 333.15 K) and pressure (10 to 18 MPa). The solubilities (in mole fraction) ranged from 2.1 x 10(-3) to 23.2 x 10(-3) for geranyl butyrate and 2.2 x 10(-3) to 25.0 x 10(-3) for 10-undecen-1-ol, respectively. The solubility data showed a retrograde behavior in the pressure and temperature range investigated. Various combinations of association and solution theory along with different activity coefficient models were developed. The experimental data for the solubilities of 21 liquid solutes along with geranyl butyrate and 10-undecen-1-ol were correlated using both the newly derived models and the existing models. The average deviation of the correlation of the new models was below 15%.

Low temperature solution processed high-kappa ZrO2 gate dielectrics for nanoelectonics

The high-kappa gate dielectrics, specifically amorphous films offer salient features such as exceptional mechanical flexibility, smooth surfaces and better uniformity associated with low leakage current density. In this work, similar to 35 nm thick amorphous ZrO2 films were deposited on silicon substrate at low temperature (300 degrees C, 1 h) from facile spin-coating method and characterized by various analytical techniques. The X-ray diffraction and X-ray photoelectron spectroscopy reveal the formation of amorphous phase ZrO2, while ellipsometry analysis together with the Atomic Force Microscope suggest the formation of dense film with surface roughness of 1.5 angstrom, respectively. The fabricated films were integrated in metal-oxide-semiconductor (MOS) structures to check the electrical capabilities. The oxide capacitance (C-ox), flat band capacitance (C-FB), flat band voltage (V-FB), dielectric constant (kappa) and oxide trapped charges (Q(ot)) extracted from high frequency (1 MHz) C-V curve are 186 pF, 104 pF, 0.37V, 15 and 2 x 10(-11) C, respectively. The small flat band voltage 0.37V, narrow hysteresis and very little frequency dispersion between 10 kHz-1 MHz suggest an excellent a-ZrO2/Si interface with very less trapped charges in the oxide. The films exhibit a low leakage current density 4.7 x 10(-9)A/cm(2) at 1V. In addition, the charge transport mechanism across the MOSC is analyzed and found to have a strong bias dependence. The space charge limited conduction mechanism is dominant in the high electric field region (1.3-5 V) due to the presence of traps, while the trap-supported tunneling is prevailed in the intermediate region (0.35-1.3 V). Low temperature solution processed ZrO2 thin films obtained are of high quality and find their importance as a potential dielectric layer on Si and polymer based flexible electronics. (C) 2016 Published by Elsevier B.V.

Long-period modulated structure and electric-field-induced structural transformation in Na0.5Bi0.5TiO3-based lead-free piezoelectrics

Na0.5Bi0.5TiO3- based lead-free piezoelectrics exhibiting giant piezostrain are technologically interesting materials for actuator applications. The lack of clarity with regard to the structure of the nonpolar phase of this system has hindered the understanding of the structural mechanism associated with the giant piezostrain and other related phenomena. In this paper, we have investigated the structure and field-induced phase transformation behavior of a model system (0.94 - x) Na0.5Bi0.5TiO3-0.06BaTiO(3)-xK(0.5)Na(0.5)NbO(3) (0.0 <= x <= 0.025). A detailed structural analysis using neutron powder diffraction revealed that the nonpolar phase is neither cubic nor a mixture of rhombohedral (R3c) and tetragonal (P4bm) phases as commonly reported in literature but exhibits a long-period modulated structure, which is most probably of the type root 2 x root 2 x n with n = 16. Our results suggest that the giant piezoelectric strain is associated with a field-induced phase transformation of the long-period modulated structure to rhombohedral R3c structure above a critical field. We also demonstrate that the giant piezostrain is lost if the system retains a fraction of the field-induced R3c phase. A possible correlation among depolarization temperature, giant piezostrain, and its electrical fatigue behavior has also been indicated.