Tension-compression asymmetry in an extruded Mg alloy AM30: temperature and strain rate effects

The effect of strain rate, (epsilon) over dot, and temperature, T, on the tension-compression asymmetry (TCA) in a dilute and wrought Mg alloy, AM30, over a temperature range that covers both twin accommodated deformation (below 250 degrees C in compression) as well as dislocation-mediated plasticity (above 250 degrees C) has been investigated. For this purpose, uniaxial tension and compression tests were conducted at T ranging from 25 to 400 degrees C with (epsilon) over dot varying between 10(-2) and 10 s(-1). In most of the cases, the stress-strain responses in tension and compression are distinctly different; with compression responses `concaving upward,' due to {10 (1) over bar2} tensile twinning at lower plastic strains followed by slip and strain hardening at higher levels of deformation, for T below 250 degrees C. This results in significant levels of TCA at T < 250 degrees C, reducing substantially at high temperatures. At T=150 and 250 degrees C, high (epsilon) over dot leads to high TCA, in particular at T=250 degrees C and (epsilon) over dot=10 s(-1), suggesting that twin-mediated plastic deformation takes precedence at high rates of loading even at sufficiently high T. TCA becomes negligible at T=350 degrees C; however at T=400 degrees C, as (epsilon) over dot increases TCA gets higher. Microscopy of the deformed samples, carried out by using electron back-scattered diffraction (EBSD), suggests that at T > 250 degrees C dynamic recrystallization begins between accompanied by reduction in the twinned fraction that contributes to the decrease of the TCA.

Nonlinear dielectric response of BaBi4Ti4O15 ceramics

Nonlinear dielectric response of BaBi4Ti4O15 ceramics synthesized via the conventional solid-state reaction route has been monitored over a wide range of electric field strengths (E-0 = 0.5 - 5 kV/cm). Dielectric permittivity was found to increase linearly within the range of applied field. Rayleigh relations were employed to interpret the nonlinear dielectric response and the contribution of irreversible domain wall motion to the macroscopic permittivity was separated. The values of room temperature Rayleigh dielectric coefficient (alpha) and relative initial permittivity (epsilon'(init)) were found to be 2.28 +/- 0.02 cm/kV and 146.10 +/- 0.07, respectively. A reasonable agreement between the simulated and measured polarization-electric field (P-E) hysteresis loops was observed at an applied electric field of 5 kV/cm.

Nanostructured GdxZn1-xO thin films by nebulizer spray pyrolysis technique: Role of doping concentration on the structural and optical properties

Nanostructured GdxZn1-xO thin films with different Gd concentration from 0% to 10% deposited at 400 degrees C using the NSF technique. The films were characterized by structural, surface and optical properties, respectively. X-ray diffraction analysis shows that the Gd doped ZnO films have lattice parameters a = 3.2497 angstrom and c = 5.2018 angstrom with hexagonal structure and preferential orientation along (002) plane. The estimated values compare well with the standard values. When film thickness increases from 222 to 240 nm a high visible region transmittance (>70%) is observed. The optical band gap energy, optical constants (n and k), complex dielectric constants (epsilon(r), and epsilon(i)) and optical conductivities (sigma(r), and sigma(i)) were calculated from optical transmittance data. The optical band gap energy is 3.2 eV for pure ZnO film and 3.6 eV for Gd0.1Zn0.9-O film. The PL studies confirm the presence of a strong UV emission peak at 399 nm. Besides, the UV emission of ZnO films decreases with the increase of Gd doping concentration correspondingly the ultra-violet emission is replaced by blue and green emissions.

Effect of TiO2 on electrical and magnetic properties of Ni0.35Cu0.12Zn0.35Fe2O4 synthesized by the microwave-hydrothermal method

The nanocomposites of xTiO(2)+(1-x)Ni0.53Cu0.12Zn0.35Fe2O4 (where 0 <= x >= 1) were prepared using microwave hydrothermal (M H) method at 165 degrees C/45 min. The as-synthesized powders were characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). The particle size of the powder varies from 18 to 35 nm. The as prepared powders were densified at 500 degrees C/30 min using microwave sintering method. The sintered composites were characterized by XRD and scanning electron microscopy (SEM). The bulk densities of the present composites were increasing with the addition of TiO2. The grain sizes of all the composite vary between 65 nm and 90 nm. The addition of TiO2 to ferrite increased the dielectric properties (epsilon' and epsilon `') also the resonant frequency of all the composites was found to be greater than 1 GHz. The imaginary part of permeability mu `' was found to increase with an increase of TiO2.

Implications of Higgs boson to diphoton decay rate in the bilinear R-parity violating supersymmetric model

The Large Hadron Collider has recently discovered a Higgs-like particle having a mass around 125 GeVand also indicated that there is an enhancement in the Higgs to diphoton decay rate as compared to that in the standard model. We have studied implications of these discoveries in the bilinear R-parity violating supersymmetric model, whose main motivation is to explain the nonzero masses for neutrinos. The R-parity violating parameters in this model are epsilon and b(epsilon), and these parameters determine the scale of neutrino masses. If the enhancement in the Higgs to diphoton decay rate is true, then we have found epsilon greater than or similar to 0.01 GeV and b epsilon similar to 1 GeV2 in order to be compatible with the neutrino oscillation data. Also, in the above mentioned analysis, we can determine the soft masses of sleptons (m(L)) and CP-odd Higgs boson mass (mA). We have estimated that m(L) greater than or similar to 300 GeV and m(A) greater than or similar to 700 GeV. We have also commented on the allowed values of epsilon and b(epsilon), in case there is no enhancement in the Higgs to diphoton decay rate. Finally, we present a model to explain the smallness of epsilon and b(epsilon).

Tensile flow and work hardening behavior of hot cross-rolled AA7010 aluminum alloy sheets

The present work describes the tensile flow and work hardening behavior of a high strength 7010 aluminum alloy by constitutive relations. The alloy has been hot rolled by three different cross-rolling schedules. Room temperature tensile properties have been evaluated as a function of tensile axis orientation in the as-hot rolled as well as peak aged conditions. It is found that both the Ludwigson and a generalized Voce-Bergstrom relation adequately describe the tensile flow behavior of the present alloy in all conditions compared to the Hollomon relation. The variation in the Ludwigson fitting parameter could be correlated well with the microstructural features and anisotropic contribution of strengthening precipitates in the as-rolled and peak aged conditions, respectively. The hardening rate and the saturation stress of the first Voce-Bergstrom parameter, on the other hand, depend mainly on the crystallographic texture of the specimens. It is further shown that for the peak aged specimens the uniform elongation (epsilon(u)) derived from the Ludwigson relation matches well with the measured epsilon(u) irrespective of processing and loading directions. However, the Ludwigson fit overestimates the epsilon(u) in case of the as-rolled specimens. The Hollomon fit, on the other hand, predicts well the measured epsilon(u), of the as-rolled specimens but severely underestimates the epsilon(u), for the peak aged specimens. Contrarily, both the relations significantly overestimate the UTS of the as-rolled and the peak aged specimens. The Voce-Bergstrom parameters define the slope of e Theta-sigma plots in the stage-III regime when the specimens show a classical linear decrease in hardening rate in stage-III. Further analysis of work hardening behavior throws some light on the effect of texture on the dislocation storage and dynamic recovery.

Exact internal controllability for a hyperbolic problem in a domain with highly oscillating boundary

In this paper, by using the Hilbert Uniqueness Method (HUM), we study the exact controllability problem described by the wave equation in a three-dimensional horizontal domain bounded at the bottom by a smooth wall and at the top by a rough wall. The latter is assumed to consist in a plane wall covered with periodically distributed asperities whose size depends on a small parameter epsilon > 0, and with a fixed height. Our aim is to obtain the exact controllability for the homogenized equation. In the process, we study the asymptotic analysis of wave equation in two setups, namely solution by standard weak formulation and solution by transposition method.

Asymptotic expansions for the structural wavenumbers of isotropic and orthotropic fluid-filled circular cylindrical shells in the intermediate frequency range

We consider wavenumbers in in vacuo and fluid-filled isotropic and orthotropic shells. Using the Donnell-Mushtari (DM) theory we find compact and elegant asymptotic expansions for the wavenumbers in the intermediate frequency range, i.e., around the ring frequency. This frequency range corresponds to the frequencies where there is a rapid change in the values of bending wavenumbers and is found to exist in isotropic and orthotropic shells (in vacua and fluid-filled) for low circumferential orders n only. The same is first identified using the n=0 mode of an orthotropic shell. Following this, using the expression for the intermediate frequency, asymptotic expansions are found for other cases. Here, in order to get compact expansions we consider slight orthotropy (epsilon << 1) and light fluid loading (mu << 1). Thus, the orthotropy parameter epsilon and the fluid loading parameter mu are used as asymptotic parameters along with the non-dimensional thickness parameter beta. The methodology can be extended to any order of epsilon, only the expansions become unwieldy. The expansions are matched with the numerical solutions of the corresponding dispersion relation. The match is found to be good.

Segmental relaxations and crystallization-induced phase separation in PVDF/PMMA blends in the presence of surface-functionalized multiwall carbon nanotubes

Crystallization-induced phase separation and segmental relaxations in poly(vinylidene fluoride)/poly(methyl methacrylate) (PVDF/PMMA) blends was systematically investigated by melt-rheology and broadband dielectric spectroscopy in the presence of multiwall carbon nanotubes (MWNTs). Different functionalized MWNTs (amine, -NH2; acid, -COOH) were incorporated in the blends by melt-mixing above the melting temperature of PVDF, where the blends are miscible, and the crystallization induced phase separation was probed in situ by shear rheology. Interestingly, only -NH2 functionalized MWNTs (a-MWNTs) aided in the formation of beta-phase (trans-trans) crystals in PVDF, whereas both the neat blends and the blends with -COOH functionalized MWNTs (c-MWNTs) showed only alpha-phase (trans-gauche-trans-gauche') crystals as inferred from wide-angle X-ray diffraction (WXRD) and Fourier transform infrared (FTIR). Furthermore, blends with only a-MWNTs facilitated in heterogeneous nucleation in the blends manifesting in an increase in the calorimetric crystallization temperature and hence, augmented the theologically determined crystallintion induced phase separation temperature. The dielectric relaxations associated with the crystalline phase of PVDF (alpha(c)) was completely absent in the blends with a-MWNTs in contrast to neat blends and the blends with c-MWNTs in the dielectric loss spectra. The relaxations in the blends investigated here appeared to follow Havriliak-Negami (HN) empirical equations, and, more interestingly, the dynamic heterogeneity in the system could be mapped by an extra relaxation at higher frequency at the crystallization-induced phase separation temperature. The mean relaxation time (tau(HN)) was evaluated and observed to be delayed in the presence of MWNTs in the blends, more prominently in the case of blends with a-MWNTs. The latter also showed a significant increase in the dielectric relaxation strength (Delta epsilon). Electron microscopy and selective etching was used to confirm the localization of MWNTs in the amorphous phases of the interspherulitic regions as observed from scanning electron microscopy (SEM). The evolved crystalline morphology, during crystallization-induced phase separation, was observed to have a strong influence on the charge transport processes in the blends. These observations were further supported by the specific interactions (like dipole induced dipole interaction) between a-MWNTs and PVDF, as inferred from FTIR, and the differences in the crystalline morphology as observed from WXRD and polarized optical microscopy (POM).

Comparative study on optical properties of Se-Zn-In and Se-Zn-Te-In chalcogenide glasses

In contemporary world optoelectronics materials are used in daily life owing to its verity of applications. Utility of these materials makes them attractive for investigations. Specifically study regarding optical properties of recent developed materials is worth for technical uses. Therefore, this work demonstrates a comparative study of extinction coefficient (K), real dielectric (epsilon') and imaginary dielectric (epsilon `') constants, refractive index (n) and optical energy band gap (E-g) with structural unit < r > for Se98-xZn2Inx (0 <= X-In <= 10) and Se93-yZn2Te5Iny (0 <= Y-In <= 10) chalcogenide glasses. Fixed amount of Te with increasing In concentration as cost of Se is largely influence the optical parameters of the materials. Values of optical parameters are obtained higher and lower respectively at thresholds structural units values. This comparative study demonstrates that enhanced values of optical parameters have been obtained for Te containing Se-Zn-In glasses.

Simultaneous measurement of mechanical and electrical contact resistances during nanoindentation of NiTi shape memory alloys

The nanoindentation technique can be employed in shape memory alloys (SMAs) to discern the transformation temperatures as well as to characterize their mechanical behavior. In this paper, we use it with simultaneous measurements of the mechanical and the electrical contact resistances (ECR) at room temperature to probe two SMAs: austenite (RTA) and martensite (RTM). Two different types of indenter tips - Berkovich and spherical - are employed to examine the SMAs' indentation responses as a function of the representative strain, epsilon(R). In Berkovich indentation, because of the sharp nature of the tip, and in consequence the high levels of strain imposed, discerning the two SMAs on the basis of the indentation response alone is difficult. In the case of the spherical tip, epsilon(R) is systematically varied and its effect on the depth recovery ratio, eta(d), is examined. Results indicate that RTA has higher eta(d) than RTM, but the difference decreases with increasing epsilon(R) such that eta(d) values for both the alloys would be similar in the fully plastic regime. The experimental trends in eta(d) vs. epsilon(R) for both the alloys could be described well with a eta(d) proportional to (epsilon(R))(-1) type equation, which is developed on the basis of a phenomenological model. This fit, in turn, directs us to the maximum epsilon(R), below which plasticity underneath the indenter would not mask the differences in the two SMAs. It was demonstrated that the ECR measurements complement the mechanical measurements in demarcating the reverse transformation from martensite to austenite during unloading of RTA, wherein a marked increase in the voltage was noted. A correlation between recovery due to reverse transformation during unloading and increase in voltage (and hence the electrical resistance) was found. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Performance Analysis of Strained Monolayer MoS2 MOSFET

We present a computational study on the impact of tensile/compressive uniaxial (epsilon(xx)) and biaxial (epsilon(xx) = epsilon(yy)) strain on monolayer MoS2, n-, and p-MOSFETs. The material properties like band structure, carrier effective mass, and the multiband Hamiltonian of the channel are evaluated using the density functional theory. Using these parameters, self-consistent Poisson-Schrodinger solution under the nonequilibrium Green's function formalism is carried out to simulate the MOS device characteristics. 1.75% uniaxial tensile strain is found to provide a minor (6%) ON current improvement for the n-MOSFET, whereas same amount of biaxial tensile strain is found to considerably improve the p-MOSFET ON currents by 2-3 times. Compressive strain, however, degrades both n-MOS and p-MOS devices performance. It is also observed that the improvement in p-MOSFET can be attained only when the channel material becomes indirect gap in nature. We further study the performance degradation in the quasi-ballistic long-channel regime using a projected current method.

Strain-controlled fatigue in B-modified Ti-6Al-4V alloys

The strain-controlled fatigue behaviour of Ti-6Al-4V alloy with up to 0.11 wt.% B addition was investigated. Results show significant softening when the strain amplitudes, Delta epsilon(T)/2, are >= 0.75%. B addition was found to improve the fatigue life for Delta epsilon(T)/2 <= 0.75% as it corresponds to the elastic regime and hence is strength dominated. At Delta epsilon(T)/2 = 1%, in contrast, the base alloy exhibits higher fatigue life as TiB particle cracking due to strain incompatibility causes easy crack nucleation in the B-modified alloys. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

EXTENSIONS OF VECTOR BUNDLES WITH APPLICATION TO NOETHER-LEFSCHETZ THEOREMS

Given a smooth, projective variety Y over an algebraically closed field of characteristic zero, and a smooth, ample hyperplane section X subset of Y, we study the question of when a bundle E on X, extends to a bundle epsilon on a Zariski open set U subset of Y containing X. The main ingredients used are explicit descriptions of various obstruction classes in the deformation theory of bundles, together with Grothendieck-Lefschetz theory. As a consequence, we prove a Noether-Lefschetz theorem for higher rank bundles, which recovers and unifies the Noether-Lefschetz theorems of Joshi and Ravindra-Srinivas.

The effect of Sb on the electrical and magnetic properties of Ni-Zn ferrites prepared by sol-gel autocombustion method

Polycrystalline Ni-Zn ferrites with a well-defined composition of Ni0.4Zn0.6Fe2-xSbxO4 synthesized using sol-gel method. Morphological characterizations on the prepared samples were performed by high resolution transmission electron and field emission scanning electron microscopy. The powders were densified using microwave sintering method. The room temperature complex permittivity (epsilon' and epsilon aEuro(3)) and permeability (mu' and mu aEuro(3)) were measured over a wide frequency range from 1 MHz-1.8 GHz. The real part of permittivity varies as `x' concentration increases and the resonance frequency was observed at much higher frequencies and there is a significant decrease in the loss factor (tan delta). The electrical resistivity and permeability of NiZn ferrites increased with an increase of Sb content. As the concentration of `x' increases from 0 to 0.08 the saturation magnetisation decreases. The saturation magnetization (M-s) a parts per thousand aEuro parts per thousand 52.211 A.m(2)/Kg for x = 0 at room temperature. The room temperature electro paramagnetic resonance (EPR) were studied.