Adsorption of oxygen and reactivity with HCl on a barium-doped lead surface

X.p.s. studies on the adsorption of oxygen on a barium-covered Pb surface have shown the presence of two distinct types of oxygen species: oxidic, O2–, and the peroxo-like O2–2(ads), and the surface has been identified as a composite of PbO and BaPbO3. On a barium pre-covered surface, the sticking probability of oxygen on Pb is increased. The O2–(ads) species preferentially reacts with HCl forming PbCl2(ads)via proton abstraction, whereas O2–2(ads) is not reactive with HCl vapour. On the Pb surface, the PbCl2 overlayer reacts with excess HCl, forming a volatile compound believed to be Pb(ClHCl)2, while in the presence of coadsorbed barium, the stability of PbCl2 is increased and the activation energy for the reaction: PbCl2(ads)+ 2HCl(g) Pb(ClHCl)2(g) is increased. Stronger intermetallic interaction is suggested to be the reason for higher PbCl2 stability.

Synthesis and characterisation of co-evaporated tin sulphide thin films

Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 mu m. The films showed an electrical resistivity of 6.1 Omega cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (> 10(4) cm(-1)) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

Interdiffusion Studies in the Co- Mo System

Study of interdiffusion in the Co-Mo system is important to understand the performance of turbine blades in jet engine applications. Mo is added to superalloys to increase the solid solution strengthening and the creep resistance. In this study, the interdiffusion coefficient in the Co(Mo) solid solution and impurity diffusion coefficient of Mo in Co are determined. Further, the activation energy and pre-exponential factors are calculated, which provide an idea about the atomic mechanism of diffusion.

Study on the Growth of Nb3Sn Superconductor in Cu(Sn)/Nb Diffusion Couple

Nb3Sn growth following the bronze technique, (i.e. by interdiffusion between Cu(Sn) alloy (bronze) and Nb) is one of the important methodologies to produce this superconductor. In this study, we have addressed the confusion over the growth rate of the Nb3Sn phase. Furthermore, a possible explanation for the corrugated layer in the multifilamentary structure is discussed. Kirkendall marker experiments were conducted to study the relative mobilities of the species, which also explained the reason for finding pores in the product phase layer. Based on the parabolic growth constant at different temperatures, the activation energy for the growth is determined. We have further explained the dramatic increase in the growth rate of the prod

Interdiffusion Study in the Fe-Nb System

The diffusion characteristics of the Fe-Nb system were investigated using the diffusion couple technique. The average interdiffusion coefficient was calculated for the Fe2Nb Laves and the FeNb mu phases.The possible diffusion mechanism was predicted by using the calculated values of the activation energy for diffusion. Kirkendall marker experiments were conducted to determine the relative mobilities of the species. Fe was found to have a faster diffusion rate than Nb in both phases.

NO reduction, CO and hydrocarbon oxidation over combustion synthesized Ag/CeO2 catalyst

The combustion technique produces ionically dispersed Ag on a nano-crystalline CeO2 surface. The catalysts thus produced were characterized by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. Catalytic properties towards NO reduction, CO and hydrocarbon oxidation have been investigated using the temperature programmed reaction technique in a packed bed tubular reactor. These results are compared with alpha-Al2O3 supported finely divided Ag metal particles synthesized by the same method. Both oxidation and reduction reactions over Ag/CeO2 have been observed to occur at lower temperatures compared to Ag/Al2O3. The rate and turnover frequency of the NO+CO reaction over 1% Ag/CeO2 are 56.3 mu mol g(-1) s(-1) and 0.97 s(-1) at 225 degrees C respectively. Activation energy (E-a) values are 71 and 67 kJ mol(-1) for CO+O-2 and NO+CO reactions, respectively, over 1% Ag/CeO2 catalyst.

Microstructure related influence on the electrical properties of pulsed laser ablated (Ba, Sr)TiO3 thin films

The microstructural dependence of electrical properties of (Ba, Sr)TiO3(BST) thin films were studied from the viewpoint of dc and ac electrical properties. The films were grown using a pulsed laser deposition technique in a temperature range of 300 to 600 degrees C, inducing changes in grain size, structure, and morphology. Consequently, two different types of films were realized, of which type I, was polycrystalline, multigrained, while type II was [100] oriented possessing a densely packed fibrous microstructure. Leakage current measurements were done at elevated temperatures to provide evidence of the conduction mechanism present in these films. The results revealed a contribution from both electronic and ionic conduction. In the case of type I films, two trapping levels were identified with energies around 0.5 and 2.73 eV, which possibly originate from oxygen vacancies V-O and Ti3+ centers, respectively. These levels act as shallow and deep traps and are reflected in the current-voltage characteristics of the BST thin films. The activation energy associated with oxygen vacancy motion in this case was obtained as 1.28 eV. On the contrary, type II films showed no evidence of deep trap energy levels, while the identified activation energy associated with shallow traps was obtained as 0.38 eV. The activation energy obtained for oxygen vacancy motion in type II films was around 1.02 eV. The dc measurement results were further elucidated through ac impedance analysis, which revealed a grain boundary dominated response in type I in comparison to type II films where grain response is highlighted. A comparison of the mean relaxation time of the two films revealed three orders of magnitude higher relaxation time in the case of type I films. Due to smaller grain size in type I films the grains were considered to be completely depleted giving rise to only grain boundary response for the bulk of the film. The activation energy obtained from conductivity plots agree very well with that of dc measurements giving values 1.3 and 1.07 eV for type I and type II films, respectively. Since oxygen vacancy transport have been identified as the origin of resistance degradation in BST thin films, type I films with their higher value of activation energy for oxygen ion mobility explains the improvement in breakdown characteristics under constant high dc field stress. The role of microstructure in controlling the rate of degradation is found useful in this instance to enhance the film properties under high electric field stresses. (C) 2000 American Institute of Physics. [S0021-8979(00)00418-7].

High-pressure studies on Ge-Te glasses. Evidence for a critical composition in IV-VI chalcogenide glassy systems

The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature and pressure. Under high pressure, all the glasses were found to undergo sharp discontinuous transitions from glassy semiconductors to crystalline metal. Several of the observed properties such as the transition pressure, conductivity activation energy and pre-exponential factor, exhibit anomalous trends at a composition x = 20. These results suggest that the x = 20 composition in the Ge-Te system should possess salient structural features. A model based on the unusual stability of structural units is proposed for explaining the anomaly at 20 at.% Ge concentration.

Annealing effect on transport properties of Nd0.67Sr0.33MnO3 thin films

Annealing dependence of the lattice parameter, resistivity, magnetoresistance and thermopower have been studied on Nd0.87Sr0.33MnO3 thin films deposited on LaAlO3 and alumina substrates by pulsed laser ablation. Upon annealing at 800 degrees C and 1000 degrees C the lattice constant of the LaAlO3 film tends toward that of the bulk target due to reduction in oxygen vacancies. This results in a metal-insulator transition at temperatures which increase with progressive annealing along with a decrease in the observed low temperature MR. Using a magnon scattering model we estimate the e(g) bandwidth of the film annealed at 1000 degrees C and show that the magnon contribution to the resistivity is suppressed in a highly oxygen deficient film and gains prominence only upon subsequent annealing. We also show that upon annealing, the polaron concentration and the spin cluster size increases in the paramagnetic phase, using an adiabatic polaron hopping model which takes into account an exchange dependent activation energy above the resistivity peak.

Transport properties of phosphomolybdate and phosphotungstate glasses

The d.c. conductivity of phosphomolybdate and phosphotungstate glasses is discussed. The conductivity of these glasses is due to the hopping of electrons between two valence states (Mo5+ to Mo6+ or W5+ W6+). In some of the glasses, the activation energy itself is found to be a function of temperature. This appears to be due to thermally activated and variable-range hopping mechanisms operating in different temperature regimes. The relation between conductivity and the [M5+]/[Mtotal](M ≡ Mo, W) ratio does not show any systematic variation. This anomaly can be understood using the structural models of these glasses. In contrast, Mott's theory and the Triberis and Friedman model have been used to obtain conductivity parameters such as the percolation distance Rij and 2agrRij (agr is the tunnelling probability). The conductivity parameter 2agrRij is quite useful to resolve the controversy regarding the tunnelling term exp(2agrRij) existing in the literature. For low values of 2agrRij, it is shown that the exp (2agrRij) term is very significant.

Kinetics and mechanism of thermal decomposition of tetramethylammonium nitrate

The mechanism of thermal decomposition of tetramethylammonium nitrate has been investigated by thermogravimetry and mass spectrometry. The activation energy for the decomposition has been determined by isothermal decomposition technique using thermogravimetry and by monitoring mass spectrometrically the formation of trimethylamine. The activation energies determined in both the cases compare well, suggesting that the decomposition proceeds via dissociation of tetramethylammonium nitrate into trimethylamine and methylnitrate.

High-temperature dielectric response in pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films

Cubic pyrochlore Bi1.5Zn1.0Nb1.5O7 thin films were deposited by pulsed laser ablation on Pt(200)/SiO2/Si at 500, 550, 600, and 650 degrees C. The thin films with (222) preferred orientation were found to grow at 650 degrees C with better crystallinity which was established by the lowest full-width half maxima of similar to 0.38. The dielectric response of the thin films grown at 650 degrees C have been characterized within a temperature range of 270-650 K and a frequency window of 0.1-100 kHz. The dielectric dispersion in the thin films shows a Maxwell-Wagner type relaxation with two different kinds of response confirmed by temperature dependent Nyquist plots. The ac conduction of the films showed a varied behavior in two different frequency regions. The power law exponent values of more than 1 at high frequency are explained by a jump-relaxation-model. The possibility of grain boundary related large polaronic hopping, due to two different power law exponents and transformation of double to single response in Nyquist plots at high temperature, has been excluded. The ``attempt jump frequency'' obtained from temperature dependent tangent loss and real part of dielectric constants, has been found to lie in the range of their lattice vibronic frequencies (10(12)-10(13) Hz). The activation energy arising from a large polaronic hopping due to trapped charge at low frequency region has been calculated from the ac conduction behavior. The range of activation energies (0.26-0.59. eV) suggests that the polaronic hopping at low frequency is mostly due to oxygen vacancies. (C) 2010 American Institute of Physics. doi:10.106311.3457335]

Electron field emission from sp (2)-induced insulating to metallic behaviour of amorphous carbon (a-C) films

The influence of concentration and size of sp (2) cluster on the transport properties and electron field emissions of amorphous carbon films have been investigated. The observed insulating to metallic behaviour from reduced activation energy derived from transport measurement and threshold field for electron emission of a-C films can be explained in terms of improvements in the connectivity between sp (2) clusters. The connectivity is resulted by the cluster concentration and size. The concentration and size of sp (2) content cluster is regulated by the coalescence of carbon globules into clusters, which evolves with deposition conditions.

Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be similar to 28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.

Interdiffusion study in binary gold-tin system

Solid state reactive diffusion in binary Au-Sn system has been studied using the diffusion couple consisting of pure elements Au and Sn annealed in the temperature range of 180-100 degrees C for 25 h Interdiffusion zone consists of four intermetallic phases Au5Sn, AuSn, AuSn2, and AuSn4 Activation energy for parabolic growth constant and integrated diffusivity for each phase has been calculated to indicate about the possible mechanism for diffusion controlled growth process Parabolic growth constant of individual phases has also been compared Kirkendall marker plane position has been indicated in the interdiffusion zone and furthermore the ratio of intrinsic diffusivities of species has also been determined. (C) 2010 Elsevier Ltd. All rights reserved.