High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE

Studies on the optical properties of InGaN alloy of relatively higher indium content are of potential interest to understand the effect of indium content on the optical band gap of epitaxial InGaN. We report the growth of self assembled non-polar high indium clusters of In0.55Ga0.45N over non-polar (11-20) a-plane In0.17Ga0.83N epilayer grown on a-plane (11-20) GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE). Such structures are potential candidates for high brightness LEDs emitting in longer wavelengths. The high resolution X-ray diffraction studies revealed the formation of two distinct compositions of InxGa1-xN alloys, which were further confirmed by photoluminescence studies. A possible mechanism for the formation of such structure was postulated which was supported with the results obtained by energy dispersive X-ray analysis. The structure hence grown when investigated for photo-detecting properties, showed sensitivity to both infrared and ultraviolet radiations due to the different composition of InGaN region. (C) 2015 Author(s).

Microstructure and Crystallographic Texture Evolution During the Friction-Stir Processing of a Precipitation-Hardenable Aluminum Alloy

Friction-stir processing (FSP) has been proven as a successful method for the grain refinement of high-strength aluminum alloys. The most important attributes of this process are the fine-grain microstructure and characteristic texture, which impart suitable properties in the as-processed material. In the current work, FSP of the precipitation-hardenable aluminum alloy 2219 has been carried out and the consequent evolution of microstructure and texture has been studied. The as-processed materials were characterized using electron back-scattered diffraction, x-ray diffraction, and electron probe microanalysis. Onion-ring formation was observed in the nugget zone, which has been found to be related to the precipitation response and crystallographic texture of the alloy. Texture development in the alloy has been attributed to the combined effect of shear deformation and dynamic recrystallization. The texture was found heterogeneous even within the nugget zone. A microtexture analysis revealed the dominance of shear texture components, with C component at the top of nugget zone and the B and A(2)* components in the middle and bottom. The bulk texture measurement in the nugget zone revealed a dominant C component. The development of a weaker texture along with the presence of some large particles in the nugget zone indicates particle-stimulated nucleation as the dominant nucleation mechanism during FSP. Grain growth follows the Burke and Turnbull mechanism and geometrical coalescence.

Restoration Mechanisms During the Friction Stir Processing of Aluminum Alloys

In the current study, correlation of microstructure evolution with bulk crystallographic texture formation during friction stir processing (FSP) of commercial aluminum alloys has been attempted. Electron back-scattered diffraction and X-ray diffraction techniques were employed for characterizing the nugget zone of optimum friction stir processed samples. Volume fraction of measured texture components revealed that the texture formation in aluminum alloys is similar irrespective of the alloy composition. Recrystallization behavior during FSP was more of a composition dependent phenomenon.

High-Temperature Workability of Thixocast A356 Aluminum Alloy

The present work highlights the role of globular microstructure on the workability of A356 aluminum alloy at elevated temperature. The hot deformation behavior was studied by isothermal hot compression tests in the temperature range 573 K to 773 K (300 A degrees C to 500 A degrees C) and strain rate range of 0.001 to 10 s(-1). The flow stress data obtained from the tests were used to estimate the strain rate sensitivity and strain rate hardening. Flow stress analysis of the alloy shows that the effect of temperature on strain hardening is more significant at lower strain levels and strain rate sensitivity is independent of strain. The results also reveal that the flowability of conventionally cast alloy increases after changing the dendritic microstructure into a globular structure through semisolid processing route. Thixocast alloy exhibits lower yield strength and higher elongation at elevated temperature in comparisons to conventionally cast values. This property has an important implication toward thixo-forming at an elevated temperature. (C) The Minerals, Metals & Materials Society and ASM International 2015

Numerical study of solidification of A356 aluminum alloy flowing on an oblique plate with experimental validation

Molten A356 aluminum alloy flowing on an oblique plate is water cooled from underneath. The melt partially solidifies on plate wall with continuous formation of columnar dendrites. These dendrites are continuously sheared off into equiaxed/fragmented grains and carried away with the melt by producing semisolid slurry collected at plate exit. Melt pouring temperature provides required solidification whereas plate inclination enables necessary shear for producing slurry of desired solid fraction. A numerical model concerning transport equations of mass, momentum, energy and species is developed for predicting velocity, temperature, macrosegregation and solid fraction. The model uses FVM with phase change algorithm, VOF and variable viscosity. The model introduces solid phase movement with gravity effect as well. Effects of melt pouring temperature and plate inclination on hydrodynamic and thermo-solutal behaviors are studied subsequently. Slurry solid fractions at plate exit are 27%, 22%, 16%, and 10% for pouring temperatures of 620 degrees C, 625 degrees C, 630 degrees C, and 635 degrees C, respectively. And, are 27%, 25%, 22%, and 18% for plate inclinations of 30, 45, 60, and 75, respectively. Melt pouring temperature of 625 degrees C with plate inclination of 60 generates appropriate quality of slurry and is the optimum. Both numerical and experimental results are in good agreement with each other. (C) 2015 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.

On the ultrafast charge migration and subsequent charge directed reactivity in Cl center dot center dot center dot N halogen-bonded clusters following vertical ionization

In this article, we have presented ultrafast charge transfer dynamics through halogen bonds following vertical ionization of representative halogen bonded clusters. Subsequent hole directed reactivity of the radical cations of halogen bonded clusters is also discussed. Furthermore, we have examined effect of the halogen bond strength on the electron-electron correlation-and relaxation-driven charge migration in halogen bonded complexes. For this study, we have selected A-Cl (A represents F, OH, CN, NH2, CF3, and COOH substituents) molecules paired with NH3 (referred as ACl:NH3 complex): these complexes exhibit halogen bonds. To the best of our knowledge, this is the first report on purely electron correlation-and relaxation-driven ultrafast (attosecond) charge migration dynamics through halogen bonds. Both density functional theory and complete active space self-consistent field theory with 6-31+G(d, p) basis set are employed for this work. Upon vertical ionization of NCCl center dot center dot center dot NH3 complex, the hole is predicted to migrate from the NH3-end to the ClCN-end of the NCCl center dot center dot center dot NH3 complex in approximately 0.5 fs on the D-0 cationic surface. This hole migration leads to structural rearrangement of the halogen bonded complex, yielding hydrogen bonding interaction stronger than the halogen bonding interaction on the same cationic surface. Other halogen bonded complexes, such as H2NCl:NH3, F3CCl:NH3, and HOOCCl:NH3, exhibit similar charge migration following vertical ionization. On the contrary, FCl:NH3 and HOCl:NH3 complexes do not exhibit any charge migration following vertical ionization to the D-0 cation state, pointing to interesting halogen bond strength-dependent charge migration. (C) 2015 AIP Publishing LLC.

Spotting 2D atomic layers on aluminum nitride thin films

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2 `' Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

Boron clusters in luminescent materials

In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed.

Stabilization of Cu-7 clusters in azide networks: syntheses, structures and magnetic behaviour

Two new azide bridged copper(II) coordination polymer compounds, Cu-7(N-3)(14)(C3H10N2)(C4H13N3)]n (I) and Cu-7(N-3)(14)(C3H10N2)(C5H15N3)(2)](n) (II) where C3H10N2 = 1,2-diaminopropane (1,2-DAP); C4H13N3 = di-ethylenetriamine (DETA); C5H15N3 = N-2-aminoethyl-1,3-propanediamine (AEDAP)] were prepared by employing a room temperature diffusion technique involving three layers. Single crystal studies reveal that both compounds I and II, have similar connectivity forming Cu7 clusters through end-on (EO) bonding of the azide. The Cu-7 clusters are connected through end-to-end (EE) connectivity of the azides forming three-dimensional structures. Magnetic studies confirmed the ferromagnetic interactions within the Cu-7 units and revealed the occurrence of concomitant ferro- and antiferro-magnetic interactions between these clusters. As a result I behaves as a weak-ferromagnet with T-C = 10 K.