Pulsewidth analysis in a mode locked internally frequency doubled Ti: sapphire laser

Theoretical analysis of internal frequency doubling in actively mode locked broadband solid state lasers is presented. The analysis is used to study the dependence of mode locked pulsewidth on the second harmonic conversion efficiency, the modulation depth, and the tuning element bandwidth in an AM mode locked Ti: sapphire laser. The results are presented in the form of graphs.  

Pulsed laser deposition film of a donor-acceptor-donor polymer as possible active layer in devices

A molecule having a ketone group between two thiophene groups was synthesized. Presence of alternating electron donating and accepting moieties gives this material a donor-acceptor-donor (DAD) architecture. PolyDAD was synthesized from DAD monomer by oxidative polymerization. Device quality films of polyDAD were fabricated using pulsed laser deposition technique. X-ray photoelectron spectroscopy (XPS) and fourier transform infrared spectra (FTIR) data of both as synthesized and film indicate the material does not degrade during ablation. Optical band gap was determined to be about 1.45 eV. Four orders of magnitude increase in conductivity was observed from as synthesized to pulsed laser deposition (PLD) fabricated film of polyDAD. Annealing of polyDAD films increase conductivity, indicating better ordering of the molecules upon heating. Rectifying devices were fabricated from polyDAD, and preliminary results are discussed.

Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Ultrafast laser spectroscopy-A tool chemists and biologists

Application of ultrafast lasers to chemistry and biology has been an active area of research in the international scene for over a decade for physical and biophysical chemists. Perhaps, ultrafast laser spectroscopy is one of the most versatile tools available today to experimentally study structure and dynamics in the time domain of nanoseconds (10(-9) sec) to femtoseconds (10(-15) sec). In this article we attempt to highlight some of the recent developments in ultrafast laser spectroscopy with particular reference to vibrational spectroscopy, viz. infrared and Raman spectroscopy, in the above time domain.

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Study of electrical properties of pulsed excimer laser deposited strontium titanate films

Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

Growth and characterization of single crystal cored fibers of organic nonlinear optical materials

The recent development of several organic materials with large nonlinear susceptibilities, high damage threshold and low melting points encouraged researchers to employ these materials in fiber form to efficiently couple diode laser pumps and obtain enhanced second harmonic generation (SHG). In this paper we report the growth of single crystal cored fibers of 4-nitro-4'-methylbenzylidene aniline, ethoxy methoxy chalcone and (-)2-((alpha) -methylbenzylamino)-5- nitropyridine by inverted Bridgman-Stockbarger technique. The fibers were grown in glass capillaries with varying internal diameters and lengths and were characterized using x-ray and polarizing microscope techniques. The propagation loss at 632.8 nm and 1300 nm were measured and SHG was studied using 1064 nm pump.

Pulsed laser deposited ZnO:In as transparent conducting oxide

Zinc oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique on corning glass substrate. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along c-direction with wurtzite structure and highly transparent with an average transmittance of more than 80% in the visible wavelength region. The energy band gap was found to decrease with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to decrease initially with doping concentration and subsequently increases. IZO with 1% of indium showed the lowest resistivity of 2.41 x 10(-2) Omega cm and large transmittance in the visible wavelength region. Especially 1% IZO thin film was observed to be a suitable transparent conducting oxide material to potentially replace indium tin oxide. (C) 2011 Elsevier B.V. All rights reserved.

Self-similar solutions of laser produced blast waves

The aerodynamics of the blast wave produced by laser ablation is studied using the piston analogy. The unsteady one-dimensional gasdynamic equations governing the flow an solved under assumption of self-similarity. The solutions are utilized to obtain analytical expressions for the velocity, density, pressure and temperature distributions. The results predict. all the experimentally observed features of the laser produced blast waves.

Threshold behaviour in the nonisothermal properties of Ge-Sb-Se glasses

Differential scanning calorimetry studies have been performed on GexSb5Se95-x (12.5≤x≤35) and GexSb10Se90-x (10≤x≤32.5) glasses. The observed dependence of the glass transition temperature on the mean coordination number up to =2.60 and the maxima in the glass transition temperature and the activation energy of crystallisation at =2.65 have been interpreted in terms of the mechanical and chemical thresholds occuring near these compositions.

Role of surface tension driven convection in pulsed - laser melting and solidification

Surface melting by a stationary, pulsed laser has been modelled by the finite element method. The role of the surface tension driven convection is investigated in detail. Numerical results are presented for a triangular laser pulse of durations 10, 50 and 200 ms. Though the magnitude of the velocity is high due to the surface tension forces, the present results indicate that a finite time is required for convection to affect the temperature distribution within the melt pool. The effect of convection is very significant for pulse durations longer than 10 ms.

Photoinduced transparency of effective three-photon absorption coefficient for femtosecond laser pulses in Ge16As29Se55 thin films

We report a dramatic change in effective three-photon absorption coefficient of amorphous Ge16As29Se55 thin films, when its optical band gap decreases by 10 meV with 532 nm light illumination. This large change provides valuable information on the higher excited states, which are otherwise inaccessible via normal optical absorption. The results also indicate that photodarkening in chalcogenide glasses can serve as an effective tool to tune the multiphoton absorption in a rather simple way. (C) 2011 American Institute of Physics.

Estimating the Threshold Surface Density of Gp120-CCR5 Complexes Necessary for HIV-1 Envelope-Mediated Cell-Cell Fusion

Reduced expression of CCR5 on target CD4(+) cells lowers their susceptibility to infection by R5-tropic HIV-1, potentially preventing transmission of infection and delaying disease progression. Binding of the HIV-1 envelope (Env) protein gp120 with CCR5 is essential for the entry of R5 viruses into target cells. The threshold surface density of gp120-CCR5 complexes that enables HIV-1 entry remains poorly estimated. We constructed a mathematical model that mimics Env-mediated cell-cell fusion assays, where target CD4(+)CCR5(+) cells are exposed to effector cells expressing Env in the presence of a coreceptor antagonist and the fraction of target cells fused with effector cells is measured. Our model employs a reaction network-based approach to describe protein interactions that precede viral entry coupled with the ternary complex model to quantify the allosteric interactions of the coreceptor antagonist and predicts the fraction of target cells fused. By fitting model predictions to published data of cell-cell fusion in the presence of the CCR5 antagonist vicriviroc, we estimated the threshold surface density of gp120-CCR5 complexes for cell-cell fusion as similar to 20 mu m(-2). Model predictions with this threshold captured data from independent cell-cell fusion assays in the presence of vicriviroc and rapamycin, a drug that modulates CCR5 expression, as well as assays in the presence of maraviroc, another CCR5 antagonist, using sixteen different Env clones derived from transmitted or early founder viruses. Our estimate of the threshold surface density of gp120-CCR5 complexes necessary for HIV-1 entry thus appears robust and may have implications for optimizing treatment with coreceptor antagonists, understanding the non-pathogenic infection of non-human primates, and designing vaccines that suppress the availability of target CD4(+)CCR5(+) cells.