362 resultados para electrical tuning


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A.C. electrical conductivity of potassium perchlorate (KP) has been measured in the temperature range 25�325°C at frequencies ranging from 50�500 Hz using an automated technique. The results are interpreted in terms of a novel mechanism involving Schottky defects in the anion sublattice and Frenkel defects in the cation sublattice. Theconductivity behavior of KP is compared with literature data on similar low-symmetry systems containing polyatomic ions.

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The behavior of electrical resistivity in the critical region of three polar + nonpolar binary liquid systems CS2 +(CH3CO)2O, C6H12+(CH3CO)2O, and n‐C7H16+(CH3CO)2O is studied. For the mixtures with critical composition, the two phase region shows a conductivity behavior with σ1−σ2∼ (−ϵ)β with β?0.35. In the one phase region dR/dT has a singularity ϵ−b with b?0.35. A possible theory of the impurity conduction is given, which broadly explains these results. The possibility of dR/dT being positive or negative is also discussed.

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Alternating Differential Scanning Calorimetric (ADSC) and electrical switching studies have been undertaken on Ge20Se80-xBix glasses (1 <= x <= 13), to understand the effect of topological thresholds on thermal properties and electrical switching behavior. It is found that the compositional dependence of glass transition temperature (Tg), crystallization temperature (T-c1) and thermal stability (AT) of Ge20Se80-xBix glasses show anomalies at a composition x= 5, the rigidity percolation/stiffness threshold of the system. Further, unusual variations are also observed in different thermal properties, such as T-g, T-c1, Delta T, Delta C-p and Delta H-NR, at the composition x= 10, which indicates the occurrence of chemical threshold in these glasses at this composition. Electrical switching studies indicate that Ge20Se8o_RBig glasses with 5 11 exhibit threshold switching behavior and those with x = 12 and 13 show memory switching. A sharp decrease has been noticed in the switching voltages with bismuth concentration, which is due to the more metallic nature of bismuth and the presence of Bi+ ions. Further, a saturation is seen in the decrease in V-T around x = 6, which is related to bismuth phase percolation at higher concentrations of Bi. (C) 2010 Elsevier B.V. All rights reserved.

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Bismuth vanadate (BVO) thin films were fabricated on indium tin oxide (ITO) coated glass substrates using pulsed laser ablation technique and investigated their structural, optical and electrical properties. The use of the indium tin oxide coated glass substrate resulted in reducing the leakage current characteristics of crystalline BVO thin films. The X-ray diffraction (XRD) studies confirmed the monophasic nature of the post annealed (500 A degrees C/1 h) films. The atomic force microscopy indicated the homogeneous distribution of crystallites in the as-deposited films. The as-deposited and the post annealed films were almost 90% transparent (380-900 nm) as confirmed by optical transmission studies. Dielectric constant of around 52 was attained accompanied by the low dielectric loss of 0.002 at 10 kHz for post annealed films. The leakage current of the post annealed BVO films on ITO coated glass substrates measured at room temperature was 8.1 x 10(-8) A at an applied electric field of 33 kV/cm, which was lower than that of the films with platinum and SrRuO3 as the bottom electrodes.

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The resistivities of zinc borate glasses containing Fe2O3, V2O5, and Fe2O3 + V2O5 have been measured as a function of composition and temperature. The values of resistivity and activation energy decrease as the transition metal oxide content is increased. The conductivities of the glasses containing Fe2O3 + V2O5 are more than the sum of those of the glasses containing only Fe2O3 or V2O5 (i.e. the activation energies are less than the sum of those in the glasses containing only Fe2O3 or V2O5). The results are discussed in terms of existing theories.

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The effect of pressure on non-ohmic conduction and electrical switching in the charge transfer complex benzidine-DDQ has been studied up to a pressure of 7·66 GPa at a temperature of 300K. Pulsed I-V measurements reveal heating contribution to non-ohmicity and switching. At high electric fields (∼ 3 × 103 V/cm), the sample switches from high resistance OFF state of several kiloohms to low resistance ON state of several ohms. Temperature dependence of conductivity of ON state show semiconducting behaviour with very low activation energy.

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The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.

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We show that the characteristic Mn2+ d emission color from Mn2+-doped CdS nanocrystals can be tuned over as much as 40 nm, in contrast to what should be expected from such a nearly localized d-d transition. This is achieved surprisingly by a fine-tuning of the host particle diameter from 1.9 to 2.6 nm, thereby changing the overall emission color from red to yellow. Systematic experiments in conjunction with state-of-the-art ab initio calculations with full geometry optimization establish that Mn2+ ions residing at surface/subsurface regions have a distorted tetrahedral coordination resulting in a larger ligand field splitting. Consequently, these near-surface Mn2+ species exhibit a lower Mn2+ d emission energy, compared to those residing at the core of the nanocrystal with an undisturbed tetrahedral coordination. The origin of the tunability of the observed Mn2+ emission is the variation of emission contributions arising from Mn2+ doped at the core, subsurface, and surface of the host. Our findings provide a unique and easy method to identify the location of an emitting Mn2+ ion in the nanocrystal, which would be otherwise very difficult to decipher.

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The electrical resistance of the binary liquid system cyclohexane + acetic anhydride is measured, in the critical region, both in the pure mixture and when the mixture is doped with small amounts (≈ 100 ppm) of H2O/D2O impurities.T c was approached to aboutt=3×10−6 wheret=(T −T c )/T c . The critical exponentb ≈ 0.35 in the fit of the resistance data to the equationdR/dT ∼t −b does not seem to be affected appreciably by the impurities. There is a sign reversal ofdR/dt in the non-critical region. Binary liquid systems seem to violate the universality of the critical resistivity.

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The electrical resistance is measured in two binary liquid systems CS2 + CH3NO2 and n-C7H16 + CH3OH in the critical region as a function of frequency from 10 Hz to 100 kHz. The critical exponent b ≈ 0.35 in the singularity of dR/dT α (T - Tc)−b near Tc has no appreciable dependence upon the frequency. Thus any contribution from dielectric dispersion to the critical resistivity is not appreciable. The universal behaviour of the dR/dT anomaly does not seem to be followed in binary liquid systems.

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Polystyrene/multiwall carbon nanotube composite films are prepared with loading up to 7 weight percent (wt%) of multiwall carbon nanotubes by solution processing and casting technique. In the formation of these composite films, iron filled carbon nanotubes with high aspect ratio (similar to 4000) were used. Scanning electron microscopy study shows that the nanotubes are uniformly dispersed within the polymer matrix. At high magnification, bending of carbon nanotubes is noticed which can be attributed to their elastic properties. The electrical conductivity measurements show that the percolation threshold is rather low at 0.21 wt%. Hysteresis loop measurements on the bulk multiwall carbon nanotube and composite samples are done at 10, 150 and 300 K and the coercivity values are found to be largest at all the temperatures, for 1 wt% composite sample. (C) 2010 Elsevier B.V. All rights reserved.

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Solid acid polymer electrolytes (SAPE) were synthesised using polyvinyl alcohol, potassium iodide and sulphuric acid in different molar ratios by solution cast technique. The temperature dependent nature of electrical conductivity and the impedance of the polymer electrolytes were determined along with the associated activation energy. The electrical conductivity at room temperature was found to be strongly depended on the amorphous nature of the polymers and H2SO4 concentration. The ac (100 Hz to 10 MHz) and dc conductivities of the polymer electrolytes with different H2SO4 concentrations were analyzed. A maximum dc conductivity of 1.05 x 10(-3) S cm(-1) has been achieved at ambient temperature for electrolytes containing 5 M H2SO4. The frequency and temperature dependent dielectric and electrical modulus properties of the SAPE were studied. The charge transport in the present polymer electrolyte was obtained using Wagner's polarization technique, which demonstrated the charge transport to be mainly due to ions. Using these solid acid polymer electrolytes novel Zn/SAPE/MnO2 solid state batteries were fabricated and their discharge capacity was calculated. An open circuit voltage of 1.758V was obtained for 5 M H2SO4 based Zn/SAPE/MnO2 battery. (C) 2010 Elsevier Ltd. All rights reserved.

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The conductivity of MgAl2O4 has been measured at 1273, 1473 and 1673 K as a function of the partial pressure of oxygen ranging from 105 to 10−14 Pa. The MgAl2O4 pellet, sandwiched between two platinum electrodes, was equilibrated with a flowing stream of either Ar + O2, CO + CO2 or Ar + H2 + H2O mixture of known composition. The gas mixture established a known oxygen partial pressure. All measurements were made at a frequency of 1 kHz. These measurements indicate pressure independent ionic conductivity in the range 1 to 10−14 Pa at 1273 K, 10−1 to 10−12 Pa at 1473 K and 10−1 to 10−4 Pa at 1673 K. The activation energy for ionic conduction is 1·48 eV, close to that for self-diffusion of Mg2+ ion in MgAl2O4 calculated from the theoretical relation of Glyde. Using the model, the energy for cation vacancy formation and activation energy for migration are estimated.