113 resultados para analog


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In this letter, we propose a scheme to improve the secrecy rate of cooperative networks using Analog Network Coding (ANC). ANC mixes the signals in the air; the desired signal is then separated out, from the mixed signals, at the legitimate receiver using techniques like self interference subtraction and signal nulling, thereby achieving better secrecy rates. Assuming global channel state information, memoryless adversaries and the decode-and-forward strategy, we seek to maximize the average secrecy rate between the source and the destination, subject to an overall power budget. Then, exploiting the structure of the optimization problem, we compute its optimal solution. Finally, we use numerical evaluations to compare our scheme with the conventional approaches.

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An area-efficient, wideband RF frequency synthesizer, which simultaneously generates multiple local oscillator (LO) signals, is designed. It is suitable for parallel wideband RF spectrum sensing in cognitive radios. The frequency synthesizer consists of an injection locked oscillator cascade (ILOC) where all the LO signals are derived from a single reference oscillator. The ILOC is implemented in a 130-nm technology with an active area of . It generates 4 uniformly spaced LO carrier frequencies from 500 MHz to 2 GHz. This design is the first known implementation of a CMOS based ILOC for wide-band RF spectrum sensing applications.

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Using first-principles density functional theory calculations, a systematic study of the lattice dynamics and related (e.g., dielectric and anharmonic) properties of BiOCuSe (bismuth-copper oxyselenide), along with a comparison with its isostructural analog LaOCuSe, is performed to find the origin of the ultralow thermal conductivity. in BiOCuSe. From the marked differences in some of these properties of the two materials, the reasons why BiOCuSe is a better thermal insulator than LaOCuSe are elucidated. For this class of oxychalcogenide thermoelectrics, phonon frequencies with symmetries, characters, spectroscopic activities, displacement patterns, and pressure coefficients of different zone-center modes, dielectric constants, dynamical charges, and phonon and Gruneisen dispersions are also determined.

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While keeping the technological evolution and commercialization of FinFET technology in mind, this paper discloses a novel concept that enables area-scaled or vertical tunneling in Fin-based technologies. The concept provides a roadmap for beyond FinFET technologies, while enjoying the advantages of FinFET-like structure without demanding technological abruptness from the existing FinFET technology nodes to beyond FinFET nodes. The proposed device at 10-nm gate length, when compared with the conventional vertical tunneling FET or planar area-scaled device, offers 100% improvement in the ON-current, 15x reduction in the OFF-current, 3x increase in the transconductance, 30% improvement in the output resistance, 55% improvement in the unity gain frequency, and more importantly 6x reduction in the footprint area for a given drive capability. Furthermore, the proposed device brings the average and minimum subthreshold slope down to 40 and 11 mV/decade at 10-nm gate length. This gives a path for beyond FinFET system-on-chip applications, while enjoying the analog, digital, and RF performance improvements.

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Mycobacterium tuberculosis elicits the stringent response under unfavorable growth conditions, such as those encountered by the pathogen inside the host. The hallmark of this response is production of guanosine tetra-and pentaphosphates, collectively termed (p)ppGpp, which have pleiotropic effects on the bacterial physiology. As the stringent response is connected to survival under stress, it is now being targeted for developing inhibitors against bacterial persistence. The Rel enzyme in mycobacteria has two catalytic domains at its N-terminus that are involved in the synthesis and hydrolysis of (p)ppGpp, respectively. However, the function of the C-terminal region of the protein remained unknown. Here, we have identified a binding site for pppGpp in the C-terminal region of Rel. The binding affinity of pppGpp was quantified by isothermal titration calorimetry. The binding site was determined by crosslinking using the nucleotide analog azido-pppGpp, and examining the crosslink product by mass spectrometry. Additionally, mutations in the Rel protein were created to confirm the site of pppGpp binding by isothermal titration calorimetry. These mutants showed increased pppGpp synthesis and reduced hydrolytic activity. We believe that binding of pppGpp to Rel provides a feedback mechanism that allows the protein to detect and adjust the (p)ppGpp level in the cell. Our work suggests that such sites should also be considered while designing inhibitors to target the stringent response.

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Shallow-trench isolation drain extended pMOS (STI-DePMOS) devices show a distinct two-stage breakdown. The impact of p-well and deep-n-well doping profile on breakdown characteristics is investigated based on TCAD simulations. Design guidelines for p-well and deep-n-well doping profile are developed to shift the onset of the first-stage breakdown to a higher drain voltage and to avoid vertical punch-through leading to early breakdown. An optimal ratio between the OFF-state breakdown voltage and the ON-state resistance could be obtained. Furthermore, the impact of p-well/deep-n-well doping profile on the figure of merits of analog and digital performance is studied. This paper aids in the design of STI drain extended MOSFET devices for widest safe operating area and optimal mixed-signal performance in advanced system-on-chip input-output process technologies.

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Low-power electronic devices used in digital telecom exchanges are vulnerable to surge voltages and currents primarily originating from natural lightning or due to the direct interactions between electric power and telecommunication lines, etc., causing the earth/ground potential rise, neutral potential rise, and faults in the system. The fault currents may flow directly to telecom lines or through the equipment to the customer's premises, causing adequate damage to the equipment and personnel safety. In wireline applications, analog or digital, central office, exchanges, and subscriber sides have to be protected. Decisive protection and protective methods have to be employed for proper functioning of the equipment under overvoltage/overcurrent conditions. Current investigation reports some interesting results obtained on the recently developed high-voltage high-current protection cards used in digital telecom exchanges. The performances of protection cards both for the ring wave and hybrid wave surges are evaluated and presented. The surge generators required for the investigation are developed and fabricated in house as per the relevant telecom standards.

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This paper presents the instrumentation and control architecture for a laboratory based two-stage 4-bed silica gel + water adsorption system. The system consists of primarily two fluids: refrigerant (water vapour) and heat transfer fluid (water) flowing through various components. Heat input to the system is simulated using multiple heaters and ambient air is used as the heat sink. The laboratory setup incorporates a real time National Instruments (NI) controller to control several digital and analog valves, heaters, pumps and fans along with simultaneous data acquisition from various flow, pressure and temperature sensors. The paper also presents in detail the various automated and manual tasks required for successful operation of the system. Finally the system pressure and temperature dynamics are reported and its performance evaluated for various cycle times. (C) 2015 Elsevier Ltd. All rights reserved.