114 resultados para TPM chip


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While keeping the technological evolution and commercialization of FinFET technology in mind, this paper discloses a novel concept that enables area-scaled or vertical tunneling in Fin-based technologies. The concept provides a roadmap for beyond FinFET technologies, while enjoying the advantages of FinFET-like structure without demanding technological abruptness from the existing FinFET technology nodes to beyond FinFET nodes. The proposed device at 10-nm gate length, when compared with the conventional vertical tunneling FET or planar area-scaled device, offers 100% improvement in the ON-current, 15x reduction in the OFF-current, 3x increase in the transconductance, 30% improvement in the output resistance, 55% improvement in the unity gain frequency, and more importantly 6x reduction in the footprint area for a given drive capability. Furthermore, the proposed device brings the average and minimum subthreshold slope down to 40 and 11 mV/decade at 10-nm gate length. This gives a path for beyond FinFET system-on-chip applications, while enjoying the analog, digital, and RF performance improvements.

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Shallow-trench isolation drain extended pMOS (STI-DePMOS) devices show a distinct two-stage breakdown. The impact of p-well and deep-n-well doping profile on breakdown characteristics is investigated based on TCAD simulations. Design guidelines for p-well and deep-n-well doping profile are developed to shift the onset of the first-stage breakdown to a higher drain voltage and to avoid vertical punch-through leading to early breakdown. An optimal ratio between the OFF-state breakdown voltage and the ON-state resistance could be obtained. Furthermore, the impact of p-well/deep-n-well doping profile on the figure of merits of analog and digital performance is studied. This paper aids in the design of STI drain extended MOSFET devices for widest safe operating area and optimal mixed-signal performance in advanced system-on-chip input-output process technologies.

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The down conversion of radio frequency components around the harmonics of the local oscillator (LO), and its impact on the accuracy of white space detection using integrated spectrum sensors, is studied. We propose an algorithm to mitigate the impact of harmonic downconversion by utilizing multiple parallel downconverters in the system architecture. The proposed algorithm is validated on a test-board using commercially available integrated circuits and a test-chip implemented in a 130-nm CMOS technology. The measured data show that the impact of the harmonic downconversion is closely related to the LO characteristics, and that much of it can be mitigated by the proposed technique.

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In this paper, we present Bi-Modal Cache - a flexible stacked DRAM cache organization which simultaneously achieves several objectives: (i) improved cache hit ratio, (ii) moving the tag storage overhead to DRAM, (iii) lower cache hit latency than tags-in-SRAM, and (iv) reduction in off-chip bandwidth wastage. The Bi-Modal Cache addresses the miss rate versus off-chip bandwidth dilemma by organizing the data in a bi-modal fashion - blocks with high spatial locality are organized as large blocks and those with little spatial locality as small blocks. By adaptively selecting the right granularity of storage for individual blocks at run-time, the proposed DRAM cache organization is able to make judicious use of the available DRAM cache capacity as well as reduce the off-chip memory bandwidth consumption. The Bi-Modal Cache improves cache hit latency despite moving the metadata to DRAM by means of a small SRAM based Way Locator. Further by leveraging the tremendous internal bandwidth and capacity that stacked DRAM organizations provide, the Bi-Modal Cache enables efficient concurrent accesses to tags and data to reduce hit time. Through detailed simulations, we demonstrate that the Bi-Modal Cache achieves overall performance improvement (in terms of Average Normalized Turnaround Time (ANTT)) of 10.8%, 13.8% and 14.0% in 4-core, 8-core and 16-core workloads respectively.

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The emission intensity of fluorophore molecule may change in presence of strong plasmon field induced by nanoparticles. The enhancement intensity is optimized through selective clustering or functionalization of nanoparticles in closed vicinity of fluorophore. Our study is aimed at understanding the enhancement mechanism of fluorescence intensity in presence of gold nanoparticles to utilize it in molecular sensing and in situ imaging in the microfluidic lab-on-chip device. Related phenomena are studied in situ in a microfluidic channel via fluorescence imaging. Detailed analysis is carried out to understand the possible mechanism of enhancement of fluorescence due to nanoparticles. In the present experimental study we show that SYTO9 fluorescence intensity increased in presence of Au nanoparticles of similar to 20 nm diameter. The fluorescence intensity is 20 time more compared to that in absence of Au nanoparticles. The enhancement of fluorescence intensity is attributed to the plasmonic resonance of Au nanoparticle at around the fluorescence emission wavelength. Underlying fundamental mechanism via dipole interaction model is explored for quantitative correlation of plasmonic enhancement properties.

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Fiber-reinforced plastics (FRPs) are typically difficult to machine due to their highly heterogeneous and anisotropic nature and the presence of two phases (fiber and matrix) with vastly different strengths and stiffnesses. Typical machining damage mechanisms in FRPs include series of brittle fractures (especially for thermosets) due to shearing and cracking of matrix material, fiber pull-outs, burring, fuzzing, fiber-matrix debonding, etc. With the aim of understanding the influence of the pronounced heterogeneity and anisotropy observed in FRPs, ``Idealized'' Carbon FRP (I-CFRP) plates were prepared using epoxy resin with embedded equispaced tows of carbon fibers. Orthogonal cutting of these I-CFRPs was carried out, and the chip formation characteristics, cutting force signals and strain distributions obtained during machining were analyzed using the Digital Image Correlation (DIC) technique. In addition, the same procedure was repeated on Uni-Directional CFRPs (UD-CFRPs). Chip formation mechanisms in FRPs were found to depend on the depth of cut and fiber orientation with pure epoxy showing a pronounced ``size effect.'' Experimental results indicate that in-situ full field strain measurements from DIC coupled with force measurements using dynamometry provide an adequate measure of anisotropy and heterogeneity during orthogonal cutting.

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In this work, we have demonstrated three unique regimes in the evaporation lifecycle of a pair of sessile droplets placed in variable proximity on a hydrophobic substrate. For small separation distance, the droplets undergo asymmetric spatiotemporal,evaporation leading to contact angle hysteresis and suppressed vaporization. The reduced evaporation has been attributed quantitatively to the existence of a constrained vapor-rich dome between the two droplets. However, a dynamic decrease in the droplet radius due to solvent removal marks a return to symmetry in terms of evaporation and contact angle. We have described the variation in evaporation flux using a universal correction factor. We have also demonstrated the existence of a critical separation distance beyond which the droplets in the, droplet pair do not affect each other. The results are crucial to a plethora of applications ranging from surface patterning to lab-on-a-chip devices.

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In this work, we have demonstrated three unique regimes in the evaporation lifecycle of a pair of sessile droplets placed in variable proximity on a hydrophobic substrate. For small separation distance, the droplets undergo asymmetric spatiotemporal,evaporation leading to contact angle hysteresis and suppressed vaporization. The reduced evaporation has been attributed quantitatively to the existence of a constrained vapor-rich dome between the two droplets. However, a dynamic decrease in the droplet radius due to solvent removal marks a return to symmetry in terms of evaporation and contact angle. We have described the variation in evaporation flux using a universal correction factor. We have also demonstrated the existence of a critical separation distance beyond which the droplets in the, droplet pair do not affect each other. The results are crucial to a plethora of applications ranging from surface patterning to lab-on-a-chip devices.

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SU8-based micromechanical structures are widely used as thermal actuators in the development of compliant micromanipulation tools. This paper reports the design, nonlinear thermomechanical analysis, fabrication, and thermal actuation of SU8 actuators. The thermomechanical analysis of the actuator incorporates nonlinear temperature-dependent properties of SU8 polymer to accurately model its thermal response during actuation. The designed SU8 thermal actuators are fabricated using surface micromachining techniques and the electrical interconnects are made to them using flip-chip bonding. The issues due to thermal stress during fabrication are discussed and a novel strategy is proposed to release the thermal stress in the fabricated actuators. Subsequent characterization of the actuator using an optical profilometer reveals excellent thermal response, good repeatability, and low hysteresis. The average deflection is similar to 8.5 mu m for an actuation current of similar to 5 mA. The experimentally obtained deflection profile and the tip deflection at different currents are both shown to be in good agreement with the predictions of the nonlinear thermomechanical model. This underscores the need to consider nonlinearities when modeling the response of SU8 thermal actuators. 2015-0087]