Electrocaloric Effect in 0.85PMN-0.15PT Thin Films Deposited by Pulsed Laser Deposition

The electrocaloric effect (ECE) of 0.85PbMg(1/3)Nb(2/3)O(3-)0.15PbTiO(3) (0.85PMN-0.15PT) thin films deposited on (111) Pt/TiO2/SiO2/Si substrate by pulsed laser deposition (PLD) has been calculated. The reversible adiabatic temperature was calculated indirectly using the Maxwell's relation Delta T = -T/C rho integral(E2)(E1) (partial derivative P/partial derivative T)(sigma,E)dE. Permittivity and P-E measurements show an anomaly at 11 degrees C on heating only. This anomaly previously reported are claimed to arise due to the PNR depolarization upon heating. The absence of this anomaly during cooling suggests that no structural phase transition takes place. A negative electrocaloric effect is observed which is explained by the increase in the entropy term.

Carbon nanoflake growth from carbon nanotubes by hot filament chemical vapor deposition

We report the growth of carbon nanoflakes (CNFs) on Si substrate by the hot filament chemical vapor deposition without the substrate bias or the catalyst. CNFs were grown using the single wall carbon nanotubes and the multiwall carbon nanotubes as the nucleation center, in the Ar-rich CH4-H-2-Ar precursor gas mixture with 1% CH4, at the chamber pressure and the substrate temperature of 7.5 Ton and 840 degrees C, respectively. In the H-2-rich condition, CNF synthesis failed due to severe etch-removal of carbon nanotubes (CNTs) while it was successful at the optimized Ar-rich condition. Other forms of carbon such as nano-diamond or mesoporous carbon failed to serve as the nucleation centers for the CNF growth. We proposed a mechanism of the CNF synthesis from the CNTs, which involved the initial unzipping of CNTs by atomic hydrogen and subsequent nucleation and growth of CNFs from the unzipped portion of the graphene layers. (C) 2013 Elsevier Ltd. All rights reserved.

Optical, Electrochemical, and Structural Properties of Spray Coated Dihexyl Substituted Poly (3,4 propylene dioxythiophene) Film for Optoelectronics Devices

The dihexyl substituted poly (3,4-propylenedioxythiophene) (PProDOT-Hx(2)) thin films uniformly deposited by cost effective spray coating technique on transparent conducting oxide coated substrates. The electro-optical properties of PProDOT-Hx(2) films were studied by UV-Vis spectroscopy that shows the color contrast about 45% with coloration efficiency of approximate to 185cm(2)/C. The electrochemical properties of PProDOT-Hx(2) films were studied by cyclic voltammetry and AC impedance techniques. The cyclic voltammogram shows that redox reaction of films are diffusion controlled and ions transportation will be faster on the polymer film at higher scan rate. Impedance spectra indicate that polymer films are showing interface charge transfer process as well as capacitive behavior between the electrode and electrolyte. The XRD of the PProDOT-Hx(2) thin films revealed that the films are in amorphous nature, which accelerates the transportation of ions during redox process.

Effect of post-deposition annealing on transverse piezoelectric coefficient and vibration sensing performance of ZnO thin films

The present experimental study investigates the influence of post-deposition annealing on the transverse piezoelectric coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The piezoelectric d(31) coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher piezoelectric d(31) coefficient value. (C) 2014 Elsevier B. V. All rights reserved.

Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target

We report here the growth of epitaxial Co metal thin film on c-plane sapphire by pulsed laser deposition (RD) using Co:ZnO target utilizing the composition inhomogeneity of the corresponding plasma. Two distinct plasma composition regions have been observed using heavily alloyed Co0.6Zn0.4O target. The central and intense region of the plasma grows Co:ZnO film; the extreme tail grows only Co metal with no trace of either ZnO or Co oxide In between the two extremes, mixed phases (Co +Co-oxides +Co:ZnO) were observed. The Co metal thin film grown in this way shows room temperature ferromagnetism with large in plane magnetization similar to 1288 emu cm(-3) and a coerciviLy of similar to 230 Oe with applied field parallel to the film-substrate interface. Carrier density of the film is similar to 10(22) cm(-3). The film is epiLaxial single phase Co metal which is confirmed by both X-ray diffraction and transmission electron microscopy characierizaLions. Planar Hall Effect (PHE) and Magneto Optic Kerr Effect (MOKE) measurements confirm that the film possesses similar attributes of Co metal. The result shows that the epiLaxial Co metal thin film can be grown from its oxides in the PLD. (C) 2014 Elsevier B.V. All rights reserved.

Effect of Post-Deposition Annealing on the Al2O3/Si(100) Interface Properties

In the present investigation, Al2O3 thin films were deposited onto Si < 100 > substrates by DC reactive magnetron sputtering. The films were annealed in vacuum for one hour at 623, 823 and 1023 K. The composition of the films was quantitatively estimated using X-ray photoelectron spectroscopy (XPS) and the O/Al ratio was found be in the range 1.19 to 1.43. Grazing incidence X-ray diffraction (GIXRD) results revealed that the annealed films are amorphous in nature. Cross sectional transmission electron microscopy (X-TEM) analysis was carried out to study the microstructure and nature of the Al2O3-Si interface as a function of post-deposition annealing. TEM results revealed the presence of nanocrystalline gamma-Al2O3 in the annealed films and an amorphous interface layer was observed at the Al2O3 Si interface. The thickness of the amorphous interface layer was determined from the TEM analysis and the results are discussed.

Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3 thin films

We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.

Impact of spray flux density and vacuum annealing on the transparent conducting properties of doubly doped (Sn plus F) zinc oxide films deposited using a simplified spray technique

In this investigation transparent conducting properties of as-deposited and annealed ZnO:Sn:F films deposited using different spray flux density by changing the solvent volume (10 mL, 20 mL ... 50 mL) of the starting solutions have been studied and reported. The structural analyses of the films indicate that all the films have hexagonal wurtzite structure of ZnO with preferential orientation along (002) plane irrespective of the solvent volume and annealing treatment whereas, the overall crystalline quality of the films is found to be enhanced with the increase in solvent volume as well as with annealing. This observed enhancement is strongly supported by the optical and surface morphological results. From the measurements of electrical parameters, it is seen that, the annealed films exhibit better electrical properties compared to the as-deposited ones. Annealing has caused agglomeration of grains as confirmed by the surface morphological studies. Also, the annealing process has led to an improvement in the optical transparency as well as band gap. It is found from the analyses of the characteristics of the as- deposited and annealed films that the annealed film deposited from starting solution having solvent volume of 50 mL is optimal in all respects, as it possesses all the desirable characteristics including the quality factor (1.60 x 10(-4) (Omega/sq.)(-1)). (C) 2014 Elsevier Ltd. All rights reserved.

Breakup processes of pressure swirl spray in gaseous cross-flow

Injection of liquid fuel in cross flowing air has been a strategy for future aircraft engines in order to control the emissions. In this context, breakup of a pressure swirl spray in gaseous cross-flow is investigated experimentally. The atomizer discharges a conical swirling sheet of liquid that interacts with cross-flowing air. This complex interaction and the resulting spray structures at various flow conditions are studied through flow visualization using still as well as high speed photography. Experiments are performed over a wide range of aerodynamic Weber number (2-300) and liquid-to-air momentum flux ratio (5-150). Various breakup regimes exhibiting different breakup processes are mapped on a parameter space based on flow conditions. This map shows significant variations from breakup regime map for a plain liquid jet in cross-flow. It is observed that the breakup of leeward side of the sheet is dominated by bag breakup and the windward side of the sheet undergoes breakup through surface waves. Similarities and differences between bag breakup present in plain liquid jet in cross-flow and swirl spray in cross-flow are explained. Multimodal drop size distribution from bag breakup, frequency of bag breakup, wavelength of surface waves and trajectory of spray in cross-flow are measured by analyzing the spray images and parametric study of their variations is also presented. (C) 2014 Elsevier Ltd. All rights reserved.

Tin-Incorporation Induced Changes in the Microstructural, Optical, and Electrical Behavior of Tungsten Oxide Nanocrystalline Thin Films Grown Via Spray Pyrolysis

Undoped and Sn-doped WO3 thin films were grown on cleaned glass substrates by chemical spray pyrolysis, using ammonium tungstate (NH4)(2)WO4 as the host precursor and tin chloride (SnCl4 center dot 5H(2)O) as the source of dopant. The XRD spectra confirm the monoclinic structure with a sharp narrow peak along (200) direction along with other peaks of low relative intensities for all the samples. On Sn doping, the films exhibit reduced crystallinity relative to the undoped film. The standard deviation for relative peak intensity with dopant concentration shows enhancement in heterogeneous nucleation growth. As evident from SEM images, on Sn doping, appearance of island-like structure (i.e., cluster of primary crystallites at few places) takes place. The transmittance has been found to decrease in all the Sn-doped films. The optical band gap has been calculated for both direct and indirect transitions. On Sn doping, the direct band gap shows a red shift and becomes 2.89 eV at 2 at.% doping. Two distinct peaks, one blue emission at 408 nm and other green emission at 533 nm, have been found in the PL spectra. Electrical conductivity has been found to increase with Sn doping.

Influence of dust deposition on photovoltaic panel performance

Solar photovoltaic power plants are ideally located in regions with high insolation levels. Photovoltaic performance is affected by high cell temperatures, soiling, mismatch and other balance-of-systems related losses. It is crucial to understand the significance of each of these losses on system performance. Soiling, highly dependent on installation conditions, is a complex performance issue to accurately quantify. The settlement of dust on panel surfaces may or may not be uniform depending on local terrain and environmental factors such as ambient temperature, wind and rainfall. It is essential to investigate the influence of dust settlement on the operating characteristics of photovoltaic systems to better understand losses in performance attributable to soiling. The current voltage (I-V) characteristics of photovoltaic panels reveal extensive information to support degradation analysis of the panels. This paper attempts to understand performance losses due to dust through a dynamic study into the I-V characteristics of panels under varying soiling conditions in an outdoor experimental test-bed. Further, the results of an indoor study simulating the performance of photovoltaic panels under different dust deposition regimes are discussed in this paper. (C) 2014 Monto Mani. Published by Elsevier Ltd. This is all open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).

Tectono-geomorphic and environmental set-up deduced during deposition of Mio-Pleistocene sediments in NW Himalaya, India

Detailed pedofacies characterization along-with lithofacies investigations of the Mio-Pleistocene Siwalik sediments exposed in the Ramnagar sub-basin have been studied so as to elucidate variability in time and space of fluvial processes and the role of intra- and extra-basinal controls on fluvial sedimentation during the evolution of the Himalayan foreland basin (HFB). Dominance of multiple, moderately to strongly developed palaeosol assemblages during deposition of Lower Siwalik (similar to 12-10.8 Ma) sediments suggest that the HFB was marked by Upland set-up of Thomas et al. (2002). Activity of intra-basinal faults on the uplands and deposition of terminal fans at different times caused the development of multiple soils. Further, detailed pedofacies along-with lithofacies studies indicate prevalence of stable tectonic conditions and development of meandering streams with broad floodplains. However, the Middle Siwalik (similar to 10.8-4.92 Ma) sub-group is marked by multistoried sandstones and minor mudstone and mainly weakly developed palaeosols, indicating deposition by large braided rivers in the form of megafans in a Lowland set-up of Thomas et al. (2002). Significant change in nature and size of rivers from the Lower to Middle Siwalik at similar to 10 Ma is found almost throughout of the basin from Kohat Plateau (Pakistan) to Nepal because the Himalayan orogeny witnessed its greatest tectonic upheaval at this time leading to attainment of great heights by the Himalaya, intensification of the monsoon, development of large rivers systems and a high rate of sedimentation, hereby a major change from the Upland set-up to the Lowland set-up over major parts of the HFB. An interesting geomorphic environmental set-up prevailed in the Ramnagar sub-basin during deposition of the studied Upper Siwalik (similar to 4.92 to <1.68 Ma) sediments as observed from the degree of pedogenesis and the type of palaeosols. In general, the Upper Siwalik sub-group in the Ramnagar sub-basin is subdivided from bottom to top into the Purmandal sandstone (4.92-4.49 Ma), Nagrota (4.49-1.68 Ma) and Boulder Conglomerate (<1.68 Ma) formations on the basis of sedimentological characters and change in dominant lithology. Presence of mudstone, a few thin gravel beds and dominant sandstone lithology with weakly to moderately developed palaeosols in the Purmandal sandstone Fm. indicates deposition by shallow braided fluvial streams. The deposition of mudstone dominant Nagrota Fm. with moderately to some well developed palaeosols and a zone of gleyed palaeosols with laminated mudstones and thin sandstones took place in an environment marked by numerous small lakes, water-logged regions and small streams in an environment just south of the Piedmont zone, perhaps similar to what is happening presently in the Upland region/the Upper Gangetic plain. This area is locally called the `Trai region' (Pascoe, 1964). Deposition of Boulder Conglomerate Fm. took place by gravelly braided river system close to the Himalayan Ranges. Activity along the Main Boundary Fault led to progradation of these environments distal-ward and led to development of on the whole a coarsening upward sequence. (C) 2014 Elsevier B.V. All rights reserved.

Photochemical Deposition of Co-Ac Catalyst on ZnO Nanorods for Solar Water Oxidation

The preparation of ZnO nanorod films decorated with cobalt-acetate (CoAc) electrocatalyst and its activity for photoelectrolysis of water have been demonstrated. The photochemically prepared CoAc catalyst is chemically and morphologically similar to the electrochemically prepared CoAc catalyst. The on-set potential of oxygen evolution reaction is lower on CoAc-ZnO photoanode in relation to bare ZnO photoanode. There is a three to four fold increase in photooxidation current of OER due to the presence of CoAc co-catalyst on ZnO. Thus, the photochemically prepared CoAc on ZnO is an alternative and efficient co-catalyst for photoelectrochemical oxygen evolution reaction. The enhancement in photocatalytic activity of ZnO by the CoAc catalyst photochemically deposited from acetate buffer solution is significantly greater than the cobalt-phosphate (CoPi) co-catalyst deposited from phosphate buffer solution. (C) The Author(s) 2015. Published by ECS. All rights reserved.