Fabrication of novel Ag3PO4/BiOBr heterojunction with high stability and enhanced visible-light-driven photocatalytic activity

Herein, we report a facile and effective method to enhance the photocatalytic activity of bismuth oxybromide (BiOBr) semiconductor through the fabrication of heterojunction with Ag3PO4. The as synthesized Ag3PO4/BiOBr microspheres were characterized with transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD) and UV-vis diffuse reflectance spectroscopy (DRS). The new Ag3PO4/BiOBr heterojunctions exhibited wide absorption in the visible-light region and compared to pure BiOBr and Ag3PO4 samples displayed exceptionally high photocatalytic activity for the degradation of typical organic pollutants such as Rhodamine B (RhB) and phenol. The optimal Ag/Bi weight ratio in Ag3PO4/BiOBr microsphere (AB7) was found to be 0.7. The enhanced photocatalytic activity was related to the efficient separation of electron-hole pairs derived from matching band potentials between BiOBr and Ag3PO4 which results into the generation of natural energy bias at heterojunction and subsequent transfer of photoinduced charge carriers. Moreover, the synthesized samples exhibited almost no loss of activity even after 6 recycling runs indicating their high photocatalytic stability. Considering the facile and environment friendly route for the synthesis of Ag3PO4/BiOBr hybrids with enhanced visible-light induced photocatalytic activity, it is possible to widely apply these hybrids in various fields such as waste water treatment. (C) 2015 Elsevier B.V. All rights reserved.

Thermoelectric properties of Pb0.75-xMnxSn0.25Te alloys with variable manganese content

Lead tin telluride is one of the well-established thermoelectric materials in the temperature range 350-750 K. In the present study, Pb0.75-xMnxSn0.25Te1.00 alloys with variable manganese (Mn) content were prepared by solid state synthesis and the thermoelectric properties were studied. X-ray diffraction, (XRD) showed that the samples followed Vegard's law, indicating solid solution formation and substitution of Mn at the Pb site. Scanning Electron Microscopy (SEM) showed that the grain sizes varied from <1 mu m to more than 10 mu m and MnTe rich phase was present for higher Mn content. Seebeck coefficient, electrical resistivity and thermal conductivity were measured from room temperature to 720 K. At 300 K, large Seebeck values were obtained, possibly due to increased effective mass on Mn substitution and low carrier concentration of the samples. At higher temperatures, transition from n-type to p-type indicated the presence of thermally generated carriers. Temperature dependent electrical resistivity showed the transition from degenerate to non-degenerate behavior. For thermal conductivity, low values (similar to 1 W/m-K at 300 K) were obtained. At higher temperatures bipolar conduction was observed, in agreement with the Seebeck and resistivity data. Due to low power factor, the maximum thermoelectric figure of merit (zT) was limited to 0.23 at 329 K for the sample with lowest Mn content (x=0.03). (C) 2015 Elsevier Ltd. All rights reserved.

Exploring the origin of ultralow thermal conductivity in layered BiOCuSe

Using first-principles density functional theory calculations, a systematic study of the lattice dynamics and related (e.g., dielectric and anharmonic) properties of BiOCuSe (bismuth-copper oxyselenide), along with a comparison with its isostructural analog LaOCuSe, is performed to find the origin of the ultralow thermal conductivity. in BiOCuSe. From the marked differences in some of these properties of the two materials, the reasons why BiOCuSe is a better thermal insulator than LaOCuSe are elucidated. For this class of oxychalcogenide thermoelectrics, phonon frequencies with symmetries, characters, spectroscopic activities, displacement patterns, and pressure coefficients of different zone-center modes, dielectric constants, dynamical charges, and phonon and Gruneisen dispersions are also determined.

In Situ Crystallographic Probing on Ameliorating Effect of Sulfide Additives and Carbon Grafting in Iron Electrodes

Beneficial effects of carbon grafting into the iron active material for rechargeable alkaline-iron-electrodes with and without Bi2S3 additive is probed by in situ X-ray diffraction in conjunction with Extended X-ray Absorption Fine Structure (EXAFS) and electrochemistry. EXAFS data unravel that the composition of pristine active material (PAM) for iron electrodes comprises 87% of magnetite and 13% of alpha-iron while carbon-grafted active material comprises 60% of magnetite and 40% of alpha-iron. In situ XRD patterns are recorded using a specially designed electrochemical cell. XRD data reflect that magnetite present in PAM iron electrode, without bismuth sulfide additive, is not reduced during charging while PAM iron electrode with bismuth sulfide additive is partially reduced to alpha-Fe/Fe(OH)(2). Interestingly, carbon-grafted-iron electrodes with bismuth sulfide exhibit complete conversion of active material to alpha-Fe/Fe(OH)2. The ameliorating effect of carbon grafting is substantiated by kinetic parameters obtained from steady-state potentiostatic polarization and Tafel plots. The mechanism for iron-electrode charge - discharge reactions are discussed in the light of the potential - pH diagrams for Fe - H2O, S - H2O and FeSads - H2O systems and it is surmised that carbon grafting into iron active material promotes its electrochemical utilization. (C) The Author(s) 2015. Published by ECS. All rights reserved.

Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?

In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.

All Inorganic Spin-Coated Nanoparticle-Based Capacitive Memory Devices

We demonstrate all inorganic, robust, cost-effective, spin-coated, two-terminal capacitive memory metal-oxide nanoparticle-oxide-semiconductor devices with cadmium telluride nanoparticles sandwiched between aluminum oxide phosphate layers to form the dielectric memory stack. Using a novel high-speed circuit to decouple reading and writing, experimentally measured memory windows, programming voltages, retention times, and endurance are comparable with or better than the two-terminal memory devices realized using other fabrication techniques.