Carbon nanoflake growth from carbon nanotubes by hot filament chemical vapor deposition

We report the growth of carbon nanoflakes (CNFs) on Si substrate by the hot filament chemical vapor deposition without the substrate bias or the catalyst. CNFs were grown using the single wall carbon nanotubes and the multiwall carbon nanotubes as the nucleation center, in the Ar-rich CH4-H-2-Ar precursor gas mixture with 1% CH4, at the chamber pressure and the substrate temperature of 7.5 Ton and 840 degrees C, respectively. In the H-2-rich condition, CNF synthesis failed due to severe etch-removal of carbon nanotubes (CNTs) while it was successful at the optimized Ar-rich condition. Other forms of carbon such as nano-diamond or mesoporous carbon failed to serve as the nucleation centers for the CNF growth. We proposed a mechanism of the CNF synthesis from the CNTs, which involved the initial unzipping of CNTs by atomic hydrogen and subsequent nucleation and growth of CNFs from the unzipped portion of the graphene layers. (C) 2013 Elsevier Ltd. All rights reserved.

Effect of post-deposition annealing on transverse piezoelectric coefficient and vibration sensing performance of ZnO thin films

The present experimental study investigates the influence of post-deposition annealing on the transverse piezoelectric coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The piezoelectric d(31) coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher piezoelectric d(31) coefficient value. (C) 2014 Elsevier B. V. All rights reserved.

Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target

We report here the growth of epitaxial Co metal thin film on c-plane sapphire by pulsed laser deposition (RD) using Co:ZnO target utilizing the composition inhomogeneity of the corresponding plasma. Two distinct plasma composition regions have been observed using heavily alloyed Co0.6Zn0.4O target. The central and intense region of the plasma grows Co:ZnO film; the extreme tail grows only Co metal with no trace of either ZnO or Co oxide In between the two extremes, mixed phases (Co +Co-oxides +Co:ZnO) were observed. The Co metal thin film grown in this way shows room temperature ferromagnetism with large in plane magnetization similar to 1288 emu cm(-3) and a coerciviLy of similar to 230 Oe with applied field parallel to the film-substrate interface. Carrier density of the film is similar to 10(22) cm(-3). The film is epiLaxial single phase Co metal which is confirmed by both X-ray diffraction and transmission electron microscopy characierizaLions. Planar Hall Effect (PHE) and Magneto Optic Kerr Effect (MOKE) measurements confirm that the film possesses similar attributes of Co metal. The result shows that the epiLaxial Co metal thin film can be grown from its oxides in the PLD. (C) 2014 Elsevier B.V. All rights reserved.

Effect of Post-Deposition Annealing on the Al2O3/Si(100) Interface Properties

In the present investigation, Al2O3 thin films were deposited onto Si < 100 > substrates by DC reactive magnetron sputtering. The films were annealed in vacuum for one hour at 623, 823 and 1023 K. The composition of the films was quantitatively estimated using X-ray photoelectron spectroscopy (XPS) and the O/Al ratio was found be in the range 1.19 to 1.43. Grazing incidence X-ray diffraction (GIXRD) results revealed that the annealed films are amorphous in nature. Cross sectional transmission electron microscopy (X-TEM) analysis was carried out to study the microstructure and nature of the Al2O3-Si interface as a function of post-deposition annealing. TEM results revealed the presence of nanocrystalline gamma-Al2O3 in the annealed films and an amorphous interface layer was observed at the Al2O3 Si interface. The thickness of the amorphous interface layer was determined from the TEM analysis and the results are discussed.

Effect of post-deposition annealing on composition and electrical properties of dc reactive magnetron sputtered Al2O3 thin films

We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.

Species and acoustic diversity of bats in a palaeotropical wet evergreen forest in southern India

The Western Ghats of India is among the top 25 biodiversity hotspots in the world. About 43% of the reported 117 bat species in India are found in this region, but few quantitative studies of bat echolocation calls and diversity have been carried out here thus far. A quantitative study of bat diversity was therefore conducted using standard techniques, including mist-netting, acoustical and roost surveys in the wet evergreen forests of Kudremukh National Park in the Western Ghats of Karnataka. A total of 106 bats were caught over 108 sampling nights, representing 17 species, 3 belonging to Megachiroptera and 14 to Microchiroptera. Acoustical and roost surveys added three more species, two from Microchiroptera and one from Megachiroptera. Of these 20 species, 4 belonged to the family Pteropodidae, 10 to Vespertilionidae, 3 to Rhinolophidae, 2 to Megadermatidae and 1 to Hipposideridae. We recorded the echolocation calls of 13 of the 16 microchiropteran species, of which the calls of 4 species (Pipistrellus coromandra, Pipistrellus affinis, Pipistrellus ceylonicus and Harpiocephalus harpia) have been recorded for the first time. Discriminant function analyses of the calls of 11 species provided 91.7% correct classification of individuals to their respective species, indicating that the echolocation calls could be used successfully for non-invasive acoustic surveys and monitoring of bat species in the future.

Influence of dust deposition on photovoltaic panel performance

Solar photovoltaic power plants are ideally located in regions with high insolation levels. Photovoltaic performance is affected by high cell temperatures, soiling, mismatch and other balance-of-systems related losses. It is crucial to understand the significance of each of these losses on system performance. Soiling, highly dependent on installation conditions, is a complex performance issue to accurately quantify. The settlement of dust on panel surfaces may or may not be uniform depending on local terrain and environmental factors such as ambient temperature, wind and rainfall. It is essential to investigate the influence of dust settlement on the operating characteristics of photovoltaic systems to better understand losses in performance attributable to soiling. The current voltage (I-V) characteristics of photovoltaic panels reveal extensive information to support degradation analysis of the panels. This paper attempts to understand performance losses due to dust through a dynamic study into the I-V characteristics of panels under varying soiling conditions in an outdoor experimental test-bed. Further, the results of an indoor study simulating the performance of photovoltaic panels under different dust deposition regimes are discussed in this paper. (C) 2014 Monto Mani. Published by Elsevier Ltd. This is all open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).

PECVD grown SiC cantilevers with Dry and Wet Release

Cantilevers made out of PECVD grown SiC films are reported here. The cantilevers were realized in two different methods isotropic etch (Dry release) and combination of wet etch and critical point dry release. The dry release process for Silicon isotropic etch results in excellent etch selectivity against SiC, to provide released structures. The optimized wet release process is able to overcome stiction issues to provide excellent SiC cantilevers.

Tectono-geomorphic and environmental set-up deduced during deposition of Mio-Pleistocene sediments in NW Himalaya, India

Detailed pedofacies characterization along-with lithofacies investigations of the Mio-Pleistocene Siwalik sediments exposed in the Ramnagar sub-basin have been studied so as to elucidate variability in time and space of fluvial processes and the role of intra- and extra-basinal controls on fluvial sedimentation during the evolution of the Himalayan foreland basin (HFB). Dominance of multiple, moderately to strongly developed palaeosol assemblages during deposition of Lower Siwalik (similar to 12-10.8 Ma) sediments suggest that the HFB was marked by Upland set-up of Thomas et al. (2002). Activity of intra-basinal faults on the uplands and deposition of terminal fans at different times caused the development of multiple soils. Further, detailed pedofacies along-with lithofacies studies indicate prevalence of stable tectonic conditions and development of meandering streams with broad floodplains. However, the Middle Siwalik (similar to 10.8-4.92 Ma) sub-group is marked by multistoried sandstones and minor mudstone and mainly weakly developed palaeosols, indicating deposition by large braided rivers in the form of megafans in a Lowland set-up of Thomas et al. (2002). Significant change in nature and size of rivers from the Lower to Middle Siwalik at similar to 10 Ma is found almost throughout of the basin from Kohat Plateau (Pakistan) to Nepal because the Himalayan orogeny witnessed its greatest tectonic upheaval at this time leading to attainment of great heights by the Himalaya, intensification of the monsoon, development of large rivers systems and a high rate of sedimentation, hereby a major change from the Upland set-up to the Lowland set-up over major parts of the HFB. An interesting geomorphic environmental set-up prevailed in the Ramnagar sub-basin during deposition of the studied Upper Siwalik (similar to 4.92 to <1.68 Ma) sediments as observed from the degree of pedogenesis and the type of palaeosols. In general, the Upper Siwalik sub-group in the Ramnagar sub-basin is subdivided from bottom to top into the Purmandal sandstone (4.92-4.49 Ma), Nagrota (4.49-1.68 Ma) and Boulder Conglomerate (<1.68 Ma) formations on the basis of sedimentological characters and change in dominant lithology. Presence of mudstone, a few thin gravel beds and dominant sandstone lithology with weakly to moderately developed palaeosols in the Purmandal sandstone Fm. indicates deposition by shallow braided fluvial streams. The deposition of mudstone dominant Nagrota Fm. with moderately to some well developed palaeosols and a zone of gleyed palaeosols with laminated mudstones and thin sandstones took place in an environment marked by numerous small lakes, water-logged regions and small streams in an environment just south of the Piedmont zone, perhaps similar to what is happening presently in the Upland region/the Upper Gangetic plain. This area is locally called the `Trai region' (Pascoe, 1964). Deposition of Boulder Conglomerate Fm. took place by gravelly braided river system close to the Himalayan Ranges. Activity along the Main Boundary Fault led to progradation of these environments distal-ward and led to development of on the whole a coarsening upward sequence. (C) 2014 Elsevier B.V. All rights reserved.

Photochemical Deposition of Co-Ac Catalyst on ZnO Nanorods for Solar Water Oxidation

The preparation of ZnO nanorod films decorated with cobalt-acetate (CoAc) electrocatalyst and its activity for photoelectrolysis of water have been demonstrated. The photochemically prepared CoAc catalyst is chemically and morphologically similar to the electrochemically prepared CoAc catalyst. The on-set potential of oxygen evolution reaction is lower on CoAc-ZnO photoanode in relation to bare ZnO photoanode. There is a three to four fold increase in photooxidation current of OER due to the presence of CoAc co-catalyst on ZnO. Thus, the photochemically prepared CoAc on ZnO is an alternative and efficient co-catalyst for photoelectrochemical oxygen evolution reaction. The enhancement in photocatalytic activity of ZnO by the CoAc catalyst photochemically deposited from acetate buffer solution is significantly greater than the cobalt-phosphate (CoPi) co-catalyst deposited from phosphate buffer solution. (C) The Author(s) 2015. Published by ECS. All rights reserved.

Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low(Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al2O3/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al2O3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al2O3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al2O3/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current-voltage characteristics displayed by these devices. (C) 2015 Elsevier B.V. All rights reserved.

Atmospheric pressure plasma chemical vapor deposition reactor for 100 mm wafers, optimized for minimum contamination at low gas flow rates

Gas discharge plasmas used for thinfilm deposition by plasma-enhanced chemical vapor deposition (PECVD) must be devoid of contaminants, like dust or active species which disturb the intended chemical reaction. In atmospheric pressure plasma systems employing an inert gas, the main source of such contamination is the residual air inside the system. To enable the construction of an atmospheric pressure plasma (APP) system with minimal contamination, we have carried out fluid dynamic simulation of the APP chamber into which an inert gas is injected at different mass flow rates. On the basis of the simulation results, we have designed and built a simple, scaled APP system, which is capable of holding a 100 mm substrate wafer, so that the presence of air (contamination) in the APP chamber is minimized with as low a flow rate of argon as possible. This is examined systematically by examining optical emission from the plasma as a function of inert gas flow rate. It is found that optical emission from the plasma shows the presence of atmospheric air, if the inlet argon flow rate is lowered below 300 sccm. That there is minimal contamination of the APP reactor built here, was verified by conducting an atmospheric pressure PECVD process under acetylene flow, combined with argon flow at 100 sccm and 500 sccm. The deposition of a polymer coating is confirmed by infrared spectroscopy. X-ray photoelectron spectroscopy shows that the polymer coating contains only 5% of oxygen, which is comparable to the oxygen content in polymer deposits obtained in low-pressure PECVD systems. (C) 2015 AIP Publishing LLC.

Influence of deposition time on the properties of electrodeposited Cu(In,Al)Se-2 thin films

Cu(In,Al)Se-2 films are grown using single step electrodeposition technique. The film properties are studied by varying the deposition time from 500 to 2000 s. Peaks corresponding to elemental Se and Cu2Se phase started appearing from 1200 s of deposition. The composition is changed significantly after 1500 S. Se concentration increased from 57 to 68% with the increase in the deposition time. The Cu2Se phase is dominant in the films deposited for a duration of 2000 s and the grain size increased from 1.12 to 2.15 mu m in this film. Raman analysis confirmed the presence of Se and Cu2Se phase in C1200. In C1500 and C2000 the spectra showed prominent mode corresponding to Cu2Se. The thickness of the film increased from 0.85 to 2.3 mu m with the increase in the deposition time. All the films showed p-type conductivity and resistivity reduced with increased thickness. (C) 2015 Elsevier Ltd. All rights reserved.

Synthesis of 3-dimensional porous graphene nanosheets using electron cyclotron resonance plasma enhanced chemical vapour deposition

Microwave plasma driven chemical vapour deposition was used to synthesize graphene nanosheets from a mixture of acetylene and hydrogen gas molecules. In this plasma, acetylene decomposes to carbon atoms that form nanostructures in the outlet plasma stream and get deposited on the substrate. The GNS consists of a few layers of graphene aligned vertically to the substrate. Graphene layers have been confirmed by high-resolution transmission electron microscopy, and Raman spectral studies were conducted to observe the defective nature of the sample. The growth of nanosheets in a vertical direction is assumed to be due to the effect of electric field and from the difference in the deposition rate in the axial and parallel directions. These vertical graphene sheets are attractive for various applications in energy storage and sensors.

High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

High-kappa TiO2 thin films have been fabricated using cost effective sol-gel and spin-coating technique on p-Si (100) wafer. Plasma activation process was used for better adhesion between TiO2 films and Si. The influence of annealing temperature on the structure-electrical properties of titania films were investigated in detail. Both XRD and Raman studies indicate that the anatase phase crystallizes at 400 degrees C, retaining its structural integrity up to 1000 degrees C. The thickness of the deposited films did not vary significantly with the annealing temperature, although the refractive index and the RMS roughness enhanced considerably, accompanied by a decrease in porosity. For electrical measurements, the films were integrated in metal-oxide-semiconductor (MOS) structure. The electrical measurements evoke a temperature dependent dielectric constant with low leakage current density. The Capacitance-voltage (C-V) characteristics of the films annealed at 400 degrees C exhibited a high value of dielectric constant (similar to 34). Further, frequency dependent C-V measurements showed a huge dispersion in accumulation capacitance due to the presence of TiO2/Si interface states and dielectric polarization, was found to follow power law dependence on frequency (with exponent `s'=0.85). A low leakage current density of 3.6 x 10(-7) A/cm(2) at 1 V was observed for the films annealed at 600 degrees C. The results of structure-electrical properties suggest that the deposition of titania by wet chemical method is more attractive and cost-effective for production of high-kappa materials compared to other advanced deposition techniques such as sputtering, MBE, MOCVD and AID. The results also suggest that the high value of dielectric constant kappa obtained at low processing temperature expands its scope as a potential dielectric layer in MOS device technology. (C) 2015 Elsevier Ltd. All rights reserved.