Indian Ocean dipole mode events in an ocean general circulation model

The evolution of the dipole mode (DM) events in the Indian Ocean is examined using an ocean model that is driven by the NCEP fluxes for the period 1975-1998. The positive DM events during 1997, 1994 and 1982 and negative DM events during 1996 and 1984-1985 are captured by the model and it reproduces both the surface and subsurface features associated with these events. In its positive phase, the DM is characterized by warmer than normal SST in the western Indian Ocean and cooler than normal SST in the eastern Indian Ocean. The DM events are accompanied by easterly wind anomalies along the equatorial Indian Ocean and upwelling-favorable alongshore wind anomalies along the coast of Sumatra. The Wyrtki jets are weak during positive DM events, and the thermocline is shallower than normal in the eastern Indian Ocean and deeper in the west. This anomaly pattern reverses during negative DM events. During the positive phase of the DM easterly wind anomalies excite an upwelling equatorial Kelvin wave. This Kelvin wave reflects from the eastern boundary as an upwelling Rossby wave which propagates westward across the equatorial Indian Ocean. The anomalies in the eastern Indian Ocean weaken after the Rossby wave passes. A similar process excites a downwelling Rossby wave during the negative phase. This Rossby wave is much weaker but wind forcing in the central equatorial Indian Ocean amplifies the downwelling and increases its westward phase speed. This Rossby wave initiates the deepening of the thermocline in the western Indian Ocean during the following positive phase of the DM. Rossby wave generated in the southern tropical Indian Ocean by Ekman pumping contributes to this warming. Concurrently, the temperature equation of the model shows upwelling and downwelling to be the most important mechanism during both positive events of 1994 and 1997. (C) 2002 Elsevier Science Ltd. All rights reserved.

An infrared spectroscopic study of the low-spin to intermediate-spin state (1A1–3T1) transition in rare earth cobaltates, LnCoO3 (Ln=La, Pr and Nd)

Low-spin (LS) to intermediate-spin (IS) state transitions in crystals of LnCoO3 (Ln=La, Pr and Nd) have been investigated by variable temperature infrared spectroscopy. The spectra reveal the occurrence of the transition around 120, 220 and 275 K, respectively, in LaCoO3,PrCoO3 and NdCoO3, at which temperatures the intensities of the stretching and the bending modes associated with the LS state decrease, accompanied by an increase in the intensities of the bands due to IS state. The characteristic frequencies of both the spin states decrease with increase in temperature, showing anomalies around the transition.

An infrared spectroscopic study of the low-spin to intermediate-spin state ((1)A(1)-T-3(1)) transition in rare earth cobaltates, LnCoO(3) (Ln = La, Pr and Nd)

Low-spin (LS) to intermediate-spin (IS) state transitions in crystals of LnCoO(3) (Ln = La, Pr and Nd) have been investigated by variable temperature infrared spectroscopy. The spectra reveal the occurrence of the transition around 120, 220 and 275 K, respectively, in LaCoO3,PrCoo(3) and NdCoO3, at which temperatures the intensities of the stretching and the bending modes associated with the LS state decrease, accompanied by an increase in the intensities of the bands due to IS state. The characteristic frequencies of both the spin states decrease with increase in temperature, showing anomalies around the transition. (C) 2001 Published by Elsevier Science B.V.

Dielectric anomaly in strontium borate-bismuth vanadate glass nanocomposite

Transparent glass nanocomposites in the pseudo binary system (100 - x) SrB4O7 (SBO)-x Bi2VO5.5 (BiV) (0 less than or equal to n less than or equal to 70) were prepared by the splat quenching technique. The nano-crystallization of bismuth vanadate (BiV) in 50 SBO-50 BiV (in mol%) glass composite has been demonstrated. These were characterized for their structural, thermal and dielectric properties. As-quenched composites under study have been confirmed to be amorphous by X-ray powder diffraction (XRD) studies. The glass transition temperature (T-g) and crystallization temperatures (T-er) were determined using differential thermal analyses (DTA), High resolution transmission electron microscopic (HRTEM) studies carried out on heat-treated samples reveal the presence of spherical nanosize crystallites of Bi2VO5.5 (BiV) dispersed in the glassy matrix of SrB4O7 (SSO). The dielectric constant (epsilon (r)) and the dielectric loss (D) measurements were carried out on the as-quenched and heat-treated glass nanocomposite samples in the frequency range 100 Hz-10 MHz. The as-quenched and the heat-treated at two different temperatures (720 and 820 K) samples exhibited broad dielectric anomalies in the vicinity of the ferroelectric-to-paraelectric transition temperature of the parent BiV ceramics. The Curie-Weiss law was found to be valid at a temperature above the transition temperature, establishing the diffused nature of the transition. (C) 2001 Elsevier Science Ltd. All rights reserved.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

MFIS and MFS structures using SrBi2Ta2O9 thin films for the FRAM applications

Recently there is an increasing demand and extensive research on high density memories, in particular to the ferroelectric random access memory composed of 1T/1C (1 transistor/1 capacitor) or 2T/2C. FRAM's exhibit fast random acess in read/write mode, non - volatility and low power for good performance. An integration of the ferroelectric on Si is the key importance and in this regard, there had been various models proposed like MFS, MFIS, MFMIS structure etc., Choosing the proper insulator is very essential for the better performance of the device and to exhibit excellent electrical characteristics. ZrTiO4 is a potential candidate because of its excellent thermal stability and lattice match on the Si substrate. SrBi2Ta2O9 and ZrTiO4 thin films were prepared on p - type Si substrate by pulsed excimer laser ablation technique. Optimization of both ZT and SBT thin films in MFS and MFIS structure had been done based on the annealing, oxygen partial pressures and substrate temperatures to have proper texture of the thin films. The dc leakage current, P - E hysteresis, capacitance - voltage and conductance - voltage measurement were carried out. The effect of the frequency dependence on MFIS structure was observed in the C – V curve. It displays a transition of C - V curve from high frequency to low frequency curve on subjection to varied frequencies. Density of interface states has been calculated using Terman and high - low frequency C - V curve. The effect of memory window in the C - V hysteresis were analysed in terms of film thickness and annealing temperatures. DC conduction mechanism were analysed in terms of poole - frenkel, Schottky and space charge limited conduction separately on MFS, MIS structure.

On breaks of the Indian monsoon

For over a century, the term break has been used for spells in which the rainfall over the Indian monsoon zone is interrupted. The phenomenon of 'break monsoon' is of great interest because long intense breaks are often associated with poor monsoon seasons. Such breaks have distinct circulation characteristics (heat trough type circulation) and have a large impact on rainfed agriculture. Although interruption of the monsoon rainfall is considered to be the most important feature of the break monsoon, traditionally breaks have been identified on the basis of the surface pressure and wind patterns over the Indian region. We have defined breaks (and active spells) on the basis of rainfall over the monsoon zone. The rainfall criteria are chosen so as to ensure a large overlap with the traditional breaks documented by Ramamurthy (1969) and De et al (1998). We have identified these rainbreaks for 1901-89. We have also identified active spells on the basis of rainfall over the Indian monsoon zone. We have shown that the all-India summer monsoon rainfall is significantly negatively correlated with the number of rainbreak days (correlation coefficient -0.56) and significantly positively correlated with the number of active days (correlation coefficient 0.47). Thus the interannual variation of the all-India summer monsoon rainfall is shown to be related to the number of days of rainbreaks and active spells identified here. There have been several studies of breaks (and also active spells in several cases) identified on the basis of different criteria over regions differing in spatial scales (e.g., Webster et al 1998; Krishnan et al 2000; Goswami and Mohan 2000; and Annamalai and Slingo 2001). We find that there is considerable overlap between the rainbreaks we have identified and breaks based on the traditional definition. There is some overlap with the breaks identified by Krishnan et al (2000) but little overlap with breaks identified by Webster et al (1998). Further, there are three or four active-break cycles in a season according to Webster et al (1998) which implies a time scale of about 40 days for which Goswami and Mohan (2000), and Annamalai and Slingo'(2001) have studied breaks and active minus break fluctuations. On the other hand, neither the traditional breaks (Ramamurthy 1969; and De et al 1998) nor the rainbreaks occur every year. This suggests that the 'breaks' in these studies axe weak spells of the intraseasonal variation of the monsoon, which occur every year. We have derived the OLR and circulation patterns associated with rainbreaks and active spells and compared them with the patterns associated with breaks/active minus break spells from these studies. Inspite of differences in the patterns over the Indian region, there is one feature which is seen in the OLR anomaly patterns of breaks identified on the basis of different criteria as well as the rainbreaks identified in this paper viz., a quadrapole over the Asia-west Pacific region arising from anomalies opposite (same) in sign to those over the Indian region occurring over the equatorial Indian Ocean and northern tropical (equatorial) parts of the west Pacific. Thus it appears that this quadrapole is a basic feature of weak spells of the intraseasonal,variation over the Asia-west Pacific region. Since the rainbreaks are intense weak spells, this basic feature is also seen in the composite patterns of these breaks. We find that rainbreaks (active spells) are also associated with negative (positive) anomalies over a part of the cast Pacific suggesting that the convection over the Indian region is linked to that over the east Pacific not only on the interannual scale (as evinced by the link between the Indian summer monsoon rainfall and ENSO) but on the intraseasonal scale as well.

Low-temperature polaronic relaxations with variable range hopping conductivity in FeTiMO(6) (M = Ta,Nb,Sb)

Low-temperature dielectric measurements on FeTiMO(6) (M = Ta,Nb,Sb) rutile-type oxides at frequencies from 0.1 Hz to 10 MHz revealed anomalous dielectric relaxations with frequency dispersion. Unlike the high-temperature relaxor response of these materials, the low-temperature relaxations are polaronic in nature. The relationship between frequency and temperature of dielectric loss peak follows T(-1/4) behavior. The frequency dependence of ac conductivity shows the well-known universal dielectric response, while the dc conductivity follows Mott variable range hopping (VRH) behavior, confirming the polaronic origin of the observed dielectric relaxations. The frequency domain analysis of the dielectric spectra shows evidence for two relaxations, with the high-frequency relaxations following Mott VRH behavior more closely. Significantly, the Cr- and Ga-based analogs, CrTiNbO(6) and GaTiMO(6) (M = Ta,Nb), that were also studied, did not show these anomalies.

Unique Utilization of a Phosphoprotein Phosphatase Fold by a Mammalian Phosphodiesterase Associated with WAGR Syndrome

Metallophosphoesterase-domain-containing protein 2 (MPPED2) is a highly evolutionarily conserved protein with orthologs found from worms to humans. The human MPPED2 gene is found in a region of chromosome 11 that is deleted in patients with WAGR (Wilms tumor, aniridia, genitourinary anomalies, and mental retardation) syndrome, and MPPED2 may function as a tumor suppressor. However, the precise cellular roles of MPPED2 are unknown, and its low phosphodiesterase activity suggests that substrate hydrolysis may not be its prime function. We present here the structures of MPPED2 and two mutants, which show that the poor activity of MPPED2 is not only a consequence of the substitution of an active-site histidine residue by glycine but also due to binding of AMP or GMP to the active site. This feature, enhanced by structural elements of the protein, allows MPPED2 to utilize the conserved phosphoprotein-phosphatase-like fold in a unique manner, ensuring that its enzymatic activity can be combined with a possible role as a scaffolding or adaptor protein. (C) 2011 Elsevier Ltd. All rights reserved.

Dielectric response of BaZrO3/BaTiO3 and SrTiO3/BaZrO3 superlattices

Dielectric materials with high tunability, low loss, and desired range of permittivity are an attractive class of materials for a variety of applications in microwave components such as tunable filters, phase shifters, antennas, etc. In this article, we have investigated the low frequency dielectric properties of BaZrO3/BaTiO3 and SrTiO3/BaZrO3 superlattices of varying modulation periods for the potential application toward electrically tunable devices. The dielectric response of the superlattices as a function of temperature revealed remarkable stability for both types of superlattices, with no observed dielectric anomalies within that range. Dielectric losses were also nominally low with minimal variation within the measured temperature range. Sufficiently high tunability of ∼ 40% was observed for the BaZrO3/BaTiO3 superlattices at the lowest individual layer thicknesses. In comparison, the SrTiO3/BaZrO3 superlattices showed a minimum tunability for lowest period structures. It showed maximum tunability of ∼ 20% at 10 kHz and room temperature at an intermediate dimension of 3.85 nm periodicity superlattice. The tunability value degraded with increasing as well as decreasing periodicities for the SrTiO3/BaZrO3 superlattices. The dielectric response has been explained on the basis of size effects, interlayer coupling between dissimilar materials, domain contribution, and depolarizing electric fields.

Polymer based photo detectors

Recent developments in our laboratory related to polymer-based light sensors are reviewed. The inherent processibility of the active polymer medium is utilized in the implementation of different designs for the opto-electronic applications. The utility of these devices as sensitive photodetectors, image sensors and position sensitive detectors is demonstrated. The schottky-type layer formation at interfaces of polymers such as polyalkylthiophenes and aluminum accompanied by the enhanced photo-induced charge separation due to high local electric field is tapped for some of these device structures. The sensitivity of polymer-based field effect transistors to light also provides a convenient lateral geometry for efficient optical-coupling and control of the transistor state. ne range of these polymer-detectors available with the option of operating in the diode and transistor modes should be an attractive feature for many potential applications.

Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

The electrical transport behavior of n-n indium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (eta) and Schottky barrier height (SBH) (Phi(B)) are temperature dependent. The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination of A**. The Richardson constant is extracted similar to 110 A cm(-2) K(-2) using the BHI model and that is in very good agreement with the theoretical value of 112 A cm(-2) K(-2). The second model uses Gaussian statistics and by this, mean barrier height Phi(0) and A** were found to be 0.69 eV and 113 A cm(-2) K(-2), respectively.

Tuning of phonon anharmonicity in pyrochlore titanates: temperature-dependent Raman studies of Sm2Ti2-xZrxO7 (x=0, 1/2, 3/4, and 2)and stuffed spin-ice Ho2+xTi2-xO7-x/2 (x=0, 1/3, and 2/3)

Anomalous temperature dependence of Raman phonon wavenumbers attributed to phononphonon anharmonic interactions has been studied in two different families of pyrochlore titanates. We bring out the role of the ionic size of titanium and the inherent vacancies of pyrochlore in these anomalies by studying the effect of replacement of Ti4?+ by Zr4?+ in Sm2Ti2O7 and by stuffing Ho3?+ in place of Ti4?+ in Ho2Ti2O7 with appropriate oxygen stoichiometry. Our results show that an increase in the concentration of the larger ion, i.e. Zr4?+ or Ho3?+, reduces the phonon anomalies, thus implying a decrease in the phononphonon anharmonic interactions. In addition, we find signatures of coupling between a phonon and crystal field transition in Sm2Ti2O7, manifested as an unusual increase in the phonon intensity with increasing temperature. Copyright (c) 2011 John Wiley & Sons, Ltd.

Coupled phonons, magnetic excitations, and ferroelectricity in AlFeO3: Raman and first-principles studies

We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 to 315 K covering a spectral range from 100 to 2200 cm(-1) and complementary first-principles density functional theory-based calculations. A strong spin-phonon coupling and magnetic ordering-induced phonon renormalization are evident in (1) anomalous temperature dependence of many modes with frequencies below 850 cm(-1), particularly near the magnetic transition temperature T-c approximate to 250 K, and (2) distinct changes in band positions of high-frequency Raman bands between 1100 and 1800 cm(-1); in particular, a broad mode near 1250 cm(-1) appears only below T-c, attributed to the two-magnon Raman scattering. We also observe weak anomalies in the mode frequencies similar to 100 K due to a magnetically driven ferroelectric phase transition. Understanding of these experimental observations has been possible on the basis of first-principles calculations of the phonons' spectrum and their coupling with spins.

A 10 tesla table-top controlled waveform magnet

Controlled waveform magnets (CWMs) are a class of pulsed magnets whose pulse shape with time can be programmed by the user. With a CWM, the user gains control not only over the magnitude of the field but also over its rate of change. In this work we present a table-top CWM, driven by a capacitor bank, capable of producing virtually any user-shaped magnetic field waveform up to 10 tesla. Insulated gate bipolar transistor chips have been paralleled to form the high current switch and paralleled chips of SiC Schottky diodes form the crowbar diode module. Sample controlled waveforms including flat-tops up to 10 tesla and some triangular magnetic field pulses have been successfully generated for 10-20 ms with a ripple < 1%. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.3699316]