Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films

The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.

Electrical Switching and Other Properties of Chalcogenide Glasses

Abstract | Electrical switching which has applications in areas such as information storage, power control, etc is a scientifically interesting and technologically important phenomenon exhibited by glassy chalcogenide semiconductors. The phase change memories based on electrical switching appear to be the most promising next generation non-volatile memories, due to many attributes which include high endurance in write/read operations, shorter write/read time, high scalability, multi-bit capability, lower cost and a compatibility with complementary metal oxide semiconductor technology.Studies on the electrical switching behavior of chalcogenide glasses help us in identifying newer glasses which could be used for phase change memory applications. In particular, studies on the composition dependence of electrical switching parameters and investigations on the correlation between switching behavior with other material properties are necessary for the selection of proper compositions which make good memory materials.In this review, an attempt has been made to summarize the dependence of the electrical switching behavior of chalcogenide glasses with other material properties such as network topological effects, glass transition & crystallization temperature, activation energy for crystallization, thermal diffusivity, electrical resistivity and others.

Effect of Multiwall Carbon Nanotubes on Electrical and Structural Properties of Polyaniline

Polyaniline (PANI) and PANI/CNT (multiwall carbon nanotubes, CNT) composites were prepared using an oxidative chemical polymerization method with ammonium persulfate and dodecyl benzene sulfonic acid as the oxidizing agent and surfactant, respectively. Fourier-transform infrared spectroscopy spectra illustrate the presence of PANI in the composite and show that some interaction exists between PANI and CNT. Embedding of CNT in the PANI matrix is confirmed by scanning electron micrography. Conductivity of the PANI/CNT composites was higher than that of pure PANI, and the maximum conductivity obtained was 4.44 S/cm at 20 wt.% CNT.

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.

Structural, EPR, optical and magnetic properties of alpha-Fe2O3 nanoparticles

alpha-Fe2O3 nanoparticles were synthesized by a low temperature solution combustion method. The structural, magnetic and luminescence properties were studied. Powder X-ray diffraction (PXRD) pattern of alpha-Fe2O3 exhibits pure rhombohedral structure. SEM micrographs reveal the dumbbell shaped particles. The EPR spectrum shows an intense resonance signal at g approximate to 5.61 corresponding to isolated Fe3+ ions situated in axially distorted sites, whereas the g approximate to 2.30 is due to Fe3+ ions coupled by exchange interaction. Raman studies show A(1g) (225 cm(-1)) and E-g (293 and 409 cm(-1)) phonon modes. The absorption at 300 nm results from the ligand to metal charge transfer transitions whereas the 540 nm peak is mainly due to the (6)A(1) + (6)A(1) —> T-4(1)(4G) + T-4(1)(4G) excitation of an Fe3+-Fe3+ pair. A prominent TL glow peak was observed at 140 C at heating rate of 5 degrees C s(-1). The trapping parameters namely activation energy (E), frequency factor (s) and order of kinetics (b) were evaluated and discussed. (C) 2012 Elsevier B.V. All rights reserved.

Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors

Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.

Dielectric and electrical conductivity properties of multi-stage spark plasma sintered HA-CaTiO3 composites and comparison with conventionally sintered materials

One of the different issues limiting the wider application of monolithic hydroxyapatite (HA) as an ideal bone replacement material is the lack of reasonably good electrical transport properties. The comprehensive electrical property characterization to evaluate the efficacy of processing parameters in achieving the desired combination of electroactive properties is considered as an important aspect in the development of HA-based bioactive material. In this perspective, the present work reports the temperature (RT-200 degrees C) and frequency (100 Hz-1 MHz) dependent dielectric properties and AC conductivity for a range of HA-CaTiO3 (HA-CT) composites, densified using both conventional pressureless sintering in air as well as spark plasma sintering in vacuum. Importantly, the AC conductivity of spark plasma sintered ceramics similar to upto 10(-5) (Omega cm)(-1)] are found to be considerably higher than the corresponding pressureless sintered ceramics similar to upto 10(-8) (Omega cm)(-1)]. Overall, the results indicate the processing route dependent functional properties of HA-CaTiO3 composites as well as related advantages of spark plasma sintering route. (C) 2013 Elsevier Ltd. All rights reserved.

Effect of film thickness and annealing on optical properties of TiO2 thin films and electrical characterization of MOS capacitors

Titanium dioxide (TiO2) thin films were deposited on glass and silicon (100) substrates by the sol-gel method. The influence of film thickness and annealing temperature on optical transmittance/reflectance of TiO2 films was studied. TiO2 films were used to fabricate metal-oxide-semiconductor capacitors. The capacitance-voltage (C-V), dissipation-voltage (D-V) and current-voltage (I-V) characteristics were studied at different annealing temperatures and the dielectric constant, current density and resistivity were estimated. The loss tangent (dissipation) increased with increase of annealing temperature.

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be similar to 2.48 eV: The current-voltage (I-V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log-log plot of the I-V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film. (C) 2014 Elsevier Ltd. All rights reserved.

Synthesis and characterization of magnetic and conductive nickel ferrite-polyaniline nanocomposites

Conducting polymer/ferrite nanocomposites with an organized structure provide a new functional hybrid between organic and inorganic materials. The most popular among the conductive polymers is the polyaniline due to its wide application in different fields. In the present work nickel ferrite nanoparticles were prepared by sol-gel citrate-nitrate method. Polyaniline/nickel ferrite nanocomposites were synthesized by a simple general and inexpensive in-situ polymerization in the presence of nickel ferrite nanoparticles. The effects of nickel ferrite nanoparticles on the DC-electrical and magnetic properties of polyaniline were investigated. The structural, morphological and thermal stability of nanocomposites were characterized by X-ray diffraction, FTIR, scanning electron micrograph and TGA. The DC conductivity of polyaniline/nickel ferrite nanocomposites have been measured as a function of temperature in the range of 80K to 300K. The magnetic properties of the nanocomposites were measured using vibrating sample magnetometer in the temperature range 300-10K up to 30 kOe magnetic field.

Electrical and Plasmonic Properties of Ligand-Free Sn4+-Doped In2O3 (ITO) Nanocrystals

Sn4+-doped In2O3 (ITO) is a benchmark transparent conducting oxide material. We prepared ligand-free but colloidal ITO (8nm, 10% Sn4+) nanocrystals (NCs) by using a post-synthesis surface-modification reaction. (CH3)(3)OBF4 removes the native oleylamine ligand from NC surfaces to give ligand-free, positively charged NCs that form a colloidal dispersion in polar solvents. Both oleylamine-capped and ligand-free ITO NCs exhibit intense absorption peaks, due to localized surface plasmon resonance (LSPR) at around =1950nm. Compared with oleylamine-capped NCs, the electrical resistivity of ligand-free ITO NCs is lower by an order of magnitude (approximate to 35mcm(-1)). Resistivity over a wide range of temperatures can be consistently described as a composite of metallic ITO grains embedded in an insulating matrix by using a simple equivalent circuit, which provides an insight into the conduction mechanism in these systems.

Giant Magnetoresistance and Related Properties of Rare Earth Manganates and Other Oxide Systems

Giant magnetoresistance (GMR), which was until recently confined to magnetic layered and granular materials, as well as doped magnetic semiconductors, occurs in manganate perovskites of the general formula Ln(1-x)A(x)MnO(3) (Ln = rare earth; A = divalent ion). These manganates are ferromagnetic at or above a certain value of x (or Mn4+ content) and become metallic at temperatures below the curie temperature, T-c. GMR is generally a maximum close to T-c or the insulator-metal (I-M) transition temperature, T-im. The T-c and %MR are markedly affected by the size of the A site cation, [r(A)], thereby affording a useful electronic phase diagram when T-c or T-im is plotted against [r(A)]. We discuss GMR and related properties of manganates in polycrystalline, thin-film, and single-crystal forms and point out certain commonalities and correlations. We also examine some unusual features in the electron-transport properties of manganates, in particular charge-ordering effects. Charge ordering is crucially dependent on [r(A)] or the e(g) band width, and the charge-ordered insulating state transforms to a metallic ferromagnetic state on the application of a magnetic field.

Effect of antimony addition on the thermal and electrical-switching behavior of bulk Se-Te glasses

The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe45 (2 <= x <= 9) glasses have been investigated by alternating differential scanning calorimetry and electrical-switching experiments, respectively. The addition of Sb is found to enhance the glass forming tendency and stability as revealed by the decrease in non-reversing enthalpy Delta H-nr. and an increase in the glass-transition width Delta T-g. Further, the glass-transition temperature of SbxSe55-xTe45 glasses, which is a measure of network connectivity, exhibits a subtle increase, suggesting a meager network growth with the addition of Sb. The crystallization temperature is also observed to increase with Sb content. The SbxSe55-xTe45 glasses (2 <= x <= 9) are found to exhibit memory type of electrical switching, which can be attributed to the polymeric nature of network and high devitrifying ability. The metallicity factor has been found to dominate over the network connectivity and rigidity in the compositional dependence of switching voltage. which shows a profound decrease with the addition of Sb.

Variable-Temperature EPR and Transport Studies on Poly(4,4'-methylenedianiline): Evidence for Bipolarons

The correlation between magnetic and transport properties is examined by studying poly(4,4'-methylenedianiline)(PMDA) salts and their bases using EPR and conductivity measurements. Five different PMDA salts (doped polymers)were prepared by chemical polymerization of 4,4'-methylenedianiline using different protonic acids. The PMDA bases were obtained by dedoping the salts using ammonium hydroxide. Ambient temperature electrical conductivity measurements show evidence for the doped PMDA system to be highly disordered. The EPR spectra of the samples were recorded in the range 20-200 "C, and the results were analyzed on the basis of the polaron-bipolaron model, which is typical of nondegenerate systems. Both PMDA salts and their bases consist of self-trapped, highly mobile polarons or radical cations. EPR studies on PMDA salts show evidence for the presence of thermally activated and temperature independent (or Pauli type) paramagnetism while the bases show thermally activated, Pauli and Curie-Weiss types of paramagnetism. The paramagnetism arises due to polarons.It is proposed that charge transport takes place through both polarons and bipolarons.

Structure and magnetotransport properties of the layered manganites REl.2Srl.8Mn,07(R E = La, Pr, Nd)

We have examined the magnetotransport properties and the structure, by Rietveld refinement of powder X-ray data, of the phases RE(1.2)Sr(1.8)Mn(2)O(7) (RE = La, Pr, Nd). We find that on cooling, La1.2Sr1.8Mn2O7 undergoes a transition to a nearly perfect ferromagnet with 90% magnetization at 1.45 T, as reported by earlier workers, but the Pr and Nd phases show only a small magnetization that grows gradually as the temperature is decreased. There seems to be significant correlation between electrical transport and the Jahn-Teller elongation of the apical Mn-O bonds in these systems. The elongation of the apical Mn-O bonds forces the nine-coordinate rock-salt site to be occupied preferentially by the smaller rare-earth-metal cations. This preferential occupation is reliably obtained from the X-ray refinement. All three title phases show a magnetoresistance ratio of about 4(corresponding to a magnetoresistance, [R(0)-R(H)]/R(0), of about 75%) at a field of 7 T and temperatures around 100 K.