137 resultados para vertical transistors


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An analysis is developed to study the unsteady mixed convection flow over a vertical cone rotating in an ambient fluid with a time-dependent angular velocity in the presence of a magnetic field. The coupled nonlinear partial differential equations governing the flow have been solved numerically using an implicit finite-difference scheme. The local skin friction coefficients in the tangential and azimuthal directions and the local Nusselt number increase with the time when the angular velocity of the-cone increases, but the reverse trend is observed for decreasing angular velocity. However, these are not mirror reflection of each other. The magnetic field reduces the skin friction coefficient in the tangential direction and also the Nusselt number, but it increases the skin friction coefficient in the azimuthal direction. The skin friction coefficients and the Nusselt number increase with the buoyancy force.

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In this paper, we model dwarf galaxies as a two-component system of gravitationally coupled stars and atomic hydrogen gas in the external force field of a pseudo-isothermal dark matter halo, and numerically obtain the radial distribution of HI vertical scale heights. This is done for a group of four dwarf galaxies (DDO 154, Ho II, IC 2574 and NGC 2366) for which most necessary input parameters are available from observations. The formulation of the equations takes into account the rising rotation curves generally observed in dwarf galaxies. The inclusion of self-gravity of the gas into the model at par with that of the stars results in scale heights that are smaller than what was obtained by previous authors. This is important as the gas scale height is often used for deriving other physical quantities. The inclusion of gas self-gravity is particularly relevant in the case of dwarf galaxies where the gas cannot be considered a minor perturbation to the mass distribution of the stars. We find that three out of four galaxies studied show a flaring of their HI discs with increasing radius, by a factor of a few within several disc scale lengths. The fourth galaxy has a thick HI disc throughout. This flaring arises as a result of the gas velocity dispersion remaining constant or decreasing only slightly while the disc mass distribution declines exponentially as a function of radius.

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In this note, a simplified procedure based on energy consideration, has been developed, for the solution of steady-state vibration of a system with combined viscous and Coulomb friction damping, subjected to frequency in dependent and frequency dependent excitation, which yields results essentially same as the exact solution. The proposed method uses results essentially same as the exact solution. The proposed method uses equivalent damping which assumes that if the damping in a system is small, the total damping effect can be represented by that of an equivalent damper.

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We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states In all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below similar to 30 K, the conductivity displays oscillatory structures In gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges In the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

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This letter investigates the influence of a corrugated gate on the transfer characteristics of thin-film transistors. Corrugations that run parallel to the length of the channel from source to drain are patterned on the gate. The author finds that these corrugations result in higher currents as compared to conventional planar-gate transistors.

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In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

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By using an axisymmetric lower bound finite element limit analysis formulation, the stability numbers (gamma H/C) for an unsupported vertical circular excavation in a cohesive-frictional soil have been generated. The numerical results are obtained for values of normalized excavation height (H/b) and friction angle (phi) greater than those considered previously in the literature. The results compare well with those available in literature. The stability numbers presented in this note would be beneficial from a design point of view. (C) 2011 Elsevier Ltd. All rights reserved.

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For the analysis and design of pile foundation used for coastal structures the prediction of cyclic response, which is influenced by the nonlinear behavior, gap (pile soil separation) and degradation (reduction in strength) of soil becomes necessary. To study the effect of the above parameters a nonlinear cyclic load analysis program using finite element method is developed, incorporating the proposed gap and degradation model and adopting an incremental-iterative procedure. The pile is idealized using beam elements and the soil by number of elastoplastic sub-element springs at each node. The effect of gap and degradation on the load-deflection behavior. elasto-plastic sub-element and resistance of the soil at ground-line have been clearly depicted in this paper.

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A large class of scattering problems of surface water waves by vertical barriers lead to mixed boundary value problems for Laplace equation. Specific attentions are paid, in the present article, to highlight an analytical method to handle this class of problems of surface water wave scattering, when the barriers in question are non-reflecting in nature. A new set of boundary conditions is proposed for such non-reflecting barriers and tile resulting boundary value problems are handled in the linearized theory of water waves. Three basic poblems of scattering by vertical barriers are solved. The present new theory of non-reflecting vertical barriers predict new transmission coefficients and tile solutions of tile mathematical problems turn out to be extremely simple and straight forward as compared to the solution for other types of barriers handled previously.

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The vertical uplift resistance of a group of two horizontal coaxial strip anchors, embedded in a general c-phi soil (where c is the unit cohesion and phi is the soil friction angle), has been determined by using the lower bound finite element limit analysis. The variation of uplift factors F-c and F-gamma, due to the components of soil cohesion and unit weight, respectively, with changes in depth (H)/width (B) has been established for different values of vertical spacing (S)/B. As compared to a single isolated anchor, the group of two anchors provides a significantly greater magnitude of F-c for phi <= 20 degrees and with H/B >= 3. The magnitude of F-c becomes almost maximum when S/B is kept closer to 0.5H/B. On the other hand, with the same H/B, as compared to a single anchor, hardly any increase in F-gamma occurs for a group of two anchors.