Electron Mean Energy, Secondary Ionization Coefficients And (E/P)Crit In Binary-Mixtures Of Sf6-N2 And Ccl2f2-N2

Measurements of the ratio of diffusion coefficient to mobility (D/ mu ) of electrons in SF6-N2 and CCl2F2-N2 mixtures over the range 80electron mean energies epsilon c.mix corresponding to (E/p)c.mix, are found to vary with the percentage of the electronegative gas in the mixture (F) according to the following relationship: (E/p)c.mix=(E/p)c.N(2)+((E/p)c.A-(E/p)c.N(2)) (1-exp(- beta F/100-F)) and epsilon c.mix= epsilon c.N(2)+( epsilon c.A- epsilon c.N(2)) (1-exp(- beta F/100-F)) where A refers to the attaching gas, either SF6 or CCl2F2 and beta is a constant, equal to 2.43 for SF6 mixtures and 5.12 for CCl2F2 mixtures. In the present study, it has been possible to show that beta is indeed to a factor of synergism. Estimated gamma values (secondary ionisation coefficients) did not show any significant variation with F for F<50.

Scanning electron microscopy study of worn Al-Si alloy surfaces

A pin-on-disc machine was used to wear Al-Si alloy pins under dry conditions. Unmodified and modified binary alloys and commercial multi-component alloys were tested. The surfaces of the worn alloys were examined by scanning electron microscopy to identify distinct topographical features to aid elucidation of the mechanisms of wear.

A high yield synthesis of (±)-5,8-dimethoxy-2-α-hydroxyethyl-3,4-dihydronaphthalene, a key intermediate in anthracyclinone synthesis

The dimethoxytetralol gives on Vilsmeier reaction the dihydronaphthaldehyde (yield,92%), which on Grignard reaction with MeMgI affords the title compound (yield,�100%), the reactions constituting a high yield synthesis of this important anthracyclinone intermediate.

Electron and x-ray diffraction studies on Al86Fe14, Al82Fe18 and Al75Fe25 quasicrystals

Electron and x-ray diffraction experiments on the metlt-spun Al100−x Fe x (x=14, 18, 25) alloys are carried out. It is observed that all the melt-spun alloys possessing the quasi-crystalline phases have icosahedral point-group symmetry.

Ionized Gas towards Galactic Centre-Constraints from Low-Frequency Recombination Lines

Observations of the H272α recombination line towards the galactic centre show features near VLSR= 0, -50 and + 36 kms-1 . We have combined the parameters of these features with the available -166 measurements to obtain the properties of the ionized gas present along the line of sight and also in the -3 kpc arm-. For the line-of-sight ionized gas we get an electron density around 7 cm-3 and a pathlength through it 10-60 pc. The emission measure and the electron temperature are in the range 500-2900 pc cm-6 and 2000-6000 - respectively. The ionized gas in the 3 kpc arm has an electron density of 30 cm-3 and extends over 9 pc along the line of sight if we assume an electron temperature of 104 K. Using the available upper limit to the intensity of the H351α recombination line, we show that the distributed ionized gas responsible for the dispersion of pulsar signals should have a temperature > 4500 - and a minimum filling factor of 20 per cent. We also show that recombination lines from the -warm ionized- gas proposed by McKee & Ostriker (1977) should be detectable in the frequency range 100-150 MHz towards the galactic centre with the sensitivity available at present.

Ce CORE level X-ray photo electron spectroscopy of CeX2Si2 (X = Fe, Co, Ni and Cu)

Ce(3d) and (4d) core level XPS spectra of CeX = Fe, Co, Ni and Cu) suggest that the mean valence of Ce was as well as 4f hybridization strength decrease systematically from Fe to Cu. This observation is in agreement with the results of Bremstrahlung Isochromat Spectroscopy (BIS), but in disagreement with LIII-edge data reported earlier.

Indian developments in ultrasonics and acoustic emission methods

Fundamental investigations in ultrasonics in India date back to the early 20th century. But, fundamental and applied research in the field of nondestructive evaluation (NDE) came much later. In the last four decades it has grown steadily in academic institutions, national laboratories and industry. Currently, commensurate with rapid industrial growth and realisation of the benefits of NDE, the activity is becoming much stronger, deeper, broader and very wide spread. Acoustic Emission (AE) is a recent entry into the field of nondestructive evaluation. Pioneering efforts in India in AE were carried out at the Indian Institute of Science in the early 1970s. The nuclear industry was the first to utilise it. Current activity in AE in the country spans materials research, incipient failure detection, integrity evaluation of structures, fracture mechanics studies and rock mechanics. In this paper, we attempt to project the current scenario in ultrasonics and acoustic emission research in India.

On Calculation Of Breakdown Voltages Of Mixtures Of Electron Attaching Gases

In this paper we report the analysis of dc breakdown tests on mixtures of CC12F2, SF6, C-C4F8, 2-C4F8, N2, C02, CF4, CHF3, and 1,1,1-CH3CF3 gases on the basis of the NKH formula Vmix=k(pd)aNbUC developed by us earlier for the binary mixtures of SF6 with air, N2, N20, and CO2. It is shown that while a and c have the values 0.915 and 0.850 respectively as earlier, k and b depend on the component gases. There is a good agreement between the calculated values on the basis of the formula and measured values reported in the literature.

Some cytoplasmic details of yeast revealed by the electron microscope

Abstract is not available.

Properties of iron related quenched-in levels in p-silicon

The electrical and optical properties of the thermally induced quenched-in levels in p-silicon which have heen attributed to iron are studied. The two levels, HI and H2, are located at Ev + 0.42 eV and Ev + 0.52 eV, respectively, as determined by TSCAP, DLTS, and transient photocapacitance methods. The photoionization cross sections are well described by Lucovsky's model. The hole capture by H1 is temperature dependent; a barrier of 40 meV is measured. However, multiphonon emission mechanism cannot be invoked to explain this temperature dependence due to the inferred zero lattice relaxation. The source of iron contamination is found to be the ambient conditions, in particular the quartz tube. The conflicting reports regarding the stability and the variation in the reported capture cross section values suggests that the observed Ev + 0.4 eV level must be a complex centre. The inferred near zero lattice relaxation during the electron transition implies weak coupling to the host lattice.

Electron attachment in binary mixtures of electronegative and buffer gases

The ratio of the electron attachment coefficient eta to the gas pressure p (reduced to 0 degrees C) evaluated from the Townsend current growth curves in binary mixtures of electronegative gases (SF6, CCl2F2, CO2) and buffer gases (N2, Ar, air) clearly indicate that the eta /p ratios do not scale as the partial pressure of electronegative gas in the mixture. Extensive calculations carried out using data experimentally obtained have shown that the attachment coefficient of the mixture eta mix can be expressed as eta mix= eta (1-exp- beta F/(100-F)) where eta is the attachment coefficient of the 100% electronegative gas, F is the percentage of the electronegative gas in the mixture and beta is a constant. The results of this analysis explain to a high degree of accuracy the data obtained in various mixtures and are in very good agreement with the data deduced by Itoh and co-workers (1980) using the Boltzmann equation method.

Magnetic Field Induced Instabilities In Localized Two-Dimensional Electron Systems

The results of extensive transport studies in localized regime of mesoscopic two-dimensional electron systems (2DES) with varying disorder are presented. A quick overview of previously achieved result is given. The main focus is on the observation of density dependent instabilities manifested by strong resistance oscillations induced by high perpendicular magnetic fields B-perpendicular to. While the amplitude of the oscillations is strongly enhanced with increasing B-perpendicular to, their position in electron density remains unaffected. The temperature dependence of resistivity shows a transition from an activated behaviour at high temperature to a saturated behaviour at low T. In the positions of resistance minima, the T dependence can even become metal-like (d rho/dT > 0). The activation energies obtained from the high T behaviour exhibit a formation of plateaux in connection with the resistance oscillations when analyzed as a function of electron density. We suggest the interplay between a strongly interacting electron phase and the background disorder as a possible explanation for our observation.

An ultraviolet photoelectron spectroscopic study of the electron states of iodine complexes with electron donors

HeI photoelectron spectra of the vapour phase complexes of diethylether and diethylsulphide with iodine have been investigated for the first time. The iodine orbital ionization energy decreases on complexation while the donor lone-pair orbital ionization energy increases markedly; the shifts are considerably larger in the sulphide complex as expected on the basis of enthalpy considerations.

Facile conversion of electron rich benzylic hydrocarbons to carbonyl compounds by peroxydisulphate and copper ions

A convenient method for the conversion of electron rich benzylic hydrocarbons to carbonyl compounds is reported.

Influence of Solvent on Photoinduced Electron-Transfer Reaction: Time-Resolved Resonance Raman Study

Time-resolved resonance Raman spectroscopy (TR3) has been used to study the effect of solvent polarity on the mechanism and nature of intermediates formed in photoinduced electron-transfer reaction between triplet flouranil ((FL)-F-3) and tetramethylbenzene (TMB). Comparison of the TR3 spectra in polar, nonpolar, and medium polar media suggests that formation of radical anion due to electron-transfer reaction between (FL)-F-3 and TMB is favored in more polar solvents, whereas ketyl radical formation is more favored in less polar media. Compared to ketyl radical, the extent of radical anion formation is negligible in nonpolar solvents. Therefore, it is inferred that in nonpolar media ketyl radical is mainly generated by hydrogen-transfer reaction in the encounter complex between (FL)-F-3 and TMB. In solvents of medium polarity, the ion-pair decay leads to the formation of both ketyl radical and ketyl radical formed from the encounter between triplet state and the donor. Thus, competition between the formation of ketyl radical and ion pair is influenced by the solvent polarity. The nature of the ion pair in different solvent polarity has been investigated from the changes observed in the vibrational frequency of (fluoranil) FL part of the complex.