121 resultados para applied field
Resumo:
The application of electromagnetic field in the context of bacteria associated infections on biomaterial surfaces has not been extensively explored. In this work, we applied a moderate intensity static magnetic field (100 mT) to understand the adhesion and growth behavior of both gram positive (S. epidermidis) and gram negative bacteria (E. coli) and also to investigate bactericidal/bacteriostatic property of the applied electromagnetic field. An in-house built magnetometer was used to apply static homogeneous magnetic field during a planned set of in vitro experiments. Both the sintered hydroxyapatite (HA) and the control samples seeded with bacteria were exposed to the magnetic field (100 mT) for different timescale during their log phase growth. Quantitative analysis of the SEM images confirms the effect of electromagnetic field on suppressing bacterial growth. Furthermore, cell integrity and inner membrane permeabilization assays were performed to understand the origin of such effect. The results of these assays were statistically analyzed to reveal the bactericidal effect of magnetic field, indicating cell membrane damage. Under the investigated culture conditions, the bactericidal effect was found to be less effective for S. Epidermidis than E. coli. (c) 2012 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater 2012:100B:12061217, 2012.
Resumo:
We report the temperature and magnetic field dependence of the conductivity of multiwall carbon nanotube mat in the temperature range 1.4-150 K and in magnetic fields up to 10 T. It is observed that charge transport in this system is governed by Mott's variable-range hopping of three-dimensional type in the higher temperature range and two-dimensional type in the lower temperature range. Mott's various parameters, such as localization length, hopping length, hopping energy and density of states at the Fermi level are deduced from the variable-range hopping fit. The resistance of the sample decreases with the magnetic field applied in the direction of tube axis of the nanotubes. The magnetic field gives rise to delocalization of states with the well-known consequence of a decrease in Mott's T-0 parameter in variable-range hopping. The application of magnetic field lowers the crossover temperature at which three-dimensional variable-range hopping turns to two-dimensional variable-range hopping. The conductivity on the lower temperature side is governed by the weak localization giving rise to positive magnetoconductance. Finally, a magnetic field-temperature diagram is proposed showing different regions for different kinds of transport mechanism.
Resumo:
In the present work, the effect of longitudinal magnetic field on wave dispersion characteristics of equivalent continuum structure (ECS) of single-walled carbon nanotubes (SWCNT) embedded in elastic medium is studied. The ECS is modelled as an Euler-Bernoulli beam. The chemical bonds between a SWCNT and the elastic medium are assumed to be formed. The elastic matrix is described by Pasternak foundation model, which accounts for both normal pressure and the transverse shear deformation. The governing equations of motion for the ECS of SWCNT under a longitudinal magnetic field are derived by considering the Lorentz magnetic force obtained from Maxwell's relations within the frame work of nonlocal elasticity theory. The wave propagation analysis is performed using spectral analysis. The results obtained show that the velocity of flexural waves in SWCNTs increases with the increase of longitudinal magnetic field exerted on it in the frequency range: 0-20 THz. The present analysis also shows that the flexural wave dispersion in the ECS of SWCNT obtained by local and nonlocal elasticity theories differ. It is found that the nonlocality reduces the wave velocity irrespective of the presence of the magnetic field and does not influences it in the higher frequency region. Further it is found that the presence of elastic matrix introduces the frequency band gap in flexural wave mode. The band gap in the flexural wave is found to independent of strength of the longitudinal magnetic field. (C) 2011 Elsevier Inc. All rights reserved.
Resumo:
We present an analytical field-effect method to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-effect mobility and its gate voltage dependence. The method proposed here is very useful not only in extracting device performance but also in physically based compact TFT modeling for circuit simulation.
Resumo:
We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.
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In this work, we observe gate tunable negative differential conductance (NDC) and current saturation in single layer and bilayer graphene transistor at high source-drain field, which arise due to the interplay among (1) self-heating, (2) hot carrier injection, and (3) drain induced minority carrier injection. The magnitude of the NDC is found to be reduced for a bilayer, in agreement with its weaker carrier-optical phonon coupling and less efficient hot carrier injection. The contributions of different mechanisms to the observed results are decoupled through fast transient measurements with nanosecond resolution. The findings provide insights into high field transport in graphene. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4754103]
Resumo:
We report the first observation and analytical model of deformation and spreading of droplets on a vibrating surface under the influence of an ultrasonic standing pressure field. The standing wave allows the droplet to spread, and the spreading rate varies inversely with viscosity. In low viscosity droplets, the synergistic effect of radial acoustic force and the transducer surface acceleration also leads to capillary waves. These unstable capillary modes grow to cause ultimate disintegration into daughter droplets. We find that using nanosuspensions, spreading and disintegration can be prevented by suppressing the development of capillary modes and subsequent break-up. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4757567]
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This paper presents a singular edge-based smoothed finite element method (sES-FEM) for mechanics problems with singular stress fields of arbitrary order. The sES-FEM uses a basic mesh of three-noded linear triangular (T3) elements and a special layer of five-noded singular triangular elements (sT5) connected to the singular-point of the stress field. The sT5 element has an additional node on each of the two edges connected to the singular-point. It allows us to represent simple and efficient enrichment with desired terms for the displacement field near the singular-point with the satisfaction of partition-of-unity property. The stiffness matrix of the discretized system is then obtained using the assumed displacement values (not the derivatives) over smoothing domains associated with the edges of elements. An adaptive procedure for the sES-FEM is proposed to enhance the quality of the solution with minimized number of nodes. Several numerical examples are provided to validate the reliability of the present sES-FEM method. (C) 2012 Elsevier B.V. All rights reserved.
Resumo:
Field emission of reduced graphene oxide coated on polystyrene film is studied in both parallel and perpendicular configurations. Low turn-on field of 0.6 V/lm and high emission current density of 200 mA/cm(2) are observed in perpendicular configuration (along the cross section), whereas a turn-on field of 6 V/lm and current density of 20 mu A/cm(2) are obtained in parallel configuration (top surface). The emission characteristics follow Fowler-Nordheim (FN) tunneling and the values of enhancement factor estimated from FN plots are 5818 (perpendicular) and 741 (parallel). Furthermore, stability and repeatability of the field emission characteristics in perpendicular configuration are presented. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4788738]
Resumo:
Hollow structures with unique morphologies form due to particle agglomeration in acoustically levitated nanofluid functional droplets when subjected to external heating. The final diameter of the structure depends only on the ratio of agglomeration to evaporation time scales for various nanoparticle laden droplets, and not on the type of the suspended particles. These time scales depend only on nanoparticle concentration. This valuable information may be exploited to form microstructures with desired properties from ceramic compounds. Phase diagrams for alumina and silica droplets indicate the transition from a bowl to ring structure depending on concentration.
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We theoretically analyze the performance of transition metal dichalcogenide (MX2) single wall nanotube (SWNT) surround gate MOSFET, in the 10 nm technology node. We consider semiconducting armchair (n, n) SWNT of MoS2, MoSe2, WS2, and WSe2 for our study. The material properties of the nanotubes are evaluated from the density functional theory, and the ballistic device characteristics are obtained by self-consistently solving the Poisson-Schrodinger equation under the non-equilibrium Green's function formalism. Simulated ON currents are in the range of 61-76 mu A for 4.5 nm diameter MX2 tubes, with peak transconductance similar to 175-218 mu S and ON/OFF ratio similar to 0.6 x 10(5)-0.8 x 10(5). The subthreshold slope is similar to 62.22 mV/decade and a nominal drain induced barrier lowering of similar to 12-15 mV/V is observed for the devices. The tungsten dichalcogenide nanotubes offer superior device output characteristics compared to the molybdenum dichalcogenide nanotubes, with WSe2 showing the best performance. Studying SWNT diameters of 2.5-5 nm, it is found that increase in diameter provides smaller carrier effective mass and 4%-6% higher ON currents. Using mean free path calculation to project the quasi-ballistic currents, 62%-75% reduction from ballistic values in drain current in long channel lengths of 100, 200 nm is observed.
Resumo:
We report the evidence for the anisotropic magnetoimpedance behavior in (001) oriented La0.7Sr0.3MnO3 (LSMO) thin films, in low frequency-low magnetic field regime. (001) oriented LSMO thin films were deposited using pulsed laser deposition and characterized with X-ray diffraction and temperature dependent magnetization studies. In the in-plain configuration, an ac magnetoresistance (MRac) of similar to -0.5% was observed at 1000 Oe, at 100 Hz frequency in these films. The MRac was found to decrease with increase in frequency. We observe increases in MRac at low frequency, indicating major contribution for change of permeability from domain wall motion. At higher frequencies, it decreases due to decrease in transverse permeability, resulting from dampening of domain wall motion. Out-of-plane configuration showed MRac similar to 5.5% at 1000 Oe, at 100 Hz frequency. The MRac turned from positive to negative with increase in frequency in out-of-plane configuration. These changes are attributed to the change in permeability of the film with the frequency and applied magnetic field.
Resumo:
We propose a novel numerical method based on a generalized eigenvalue decomposition for solving the diffusion equation governing the correlation diffusion of photons in turbid media. Medical imaging modalities such as diffuse correlation tomography and ultrasound-modulated optical tomography have the (elliptic) diffusion equation parameterized by a time variable as the forward model. Hitherto, for the computation of the correlation function, the diffusion equation is solved repeatedly over the time parameter. We show that the use of a certain time-independent generalized eigenfunction basis results in the decoupling of the spatial and time dependence of the correlation function, thus allowing greater computational efficiency in arriving at the forward solution. Besides presenting the mathematical analysis of the generalized eigenvalue problem on the basis of spectral theory, we put forth the numerical results that compare the proposed numerical method with the standard technique for solving the diffusion equation.
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This article reports the intermittent pulse electric field stimulus mediated in vitro cellular response of L929 mouse fibroblast/SaOS2 osteoblast-like cells on austenitic steel substrates in reference to the field strength dependent behavior. The cellular density and morphometric analyses revealed that the optimal electric (E) fields for the maximum cell density of adhered L929 (similar to 270 % to that of untreated sample) and SaOS2 (similar to 280 % to that of untreated sample) cells are 1 V (0.33 V/cm) and 2 V (0.67 V/cm), respectively. The trend in aspect ratio of elongated SaOS2 cells did not indicate any significant difference among the untreated and treated (up to 3.33 V/cm) cells. The average cell and nucleus areas (for SaOS2 cells) were increased with an increase in the applied voltage up to 8 V (2.67 V/cm) and reduced thereafter. However, the ratio of nucleus to total cell area was increased significantly on the application of higher voltages (2-10 V), indicating the possible influence of E-field on cell growth. Further, the cell density results were compared with earlier results obtained with sintered Hydroxyapatite (HA) and HA-BaTiO3 composites and such comparison revealed that the enhanced cell density on steel sample occurs upon application of much lower field strength and stimulation time. This indicates the possible role of substrate conductivity towards cell growth in pulsed E-field mediated culture conditions.
Resumo:
Carbon nanotubes (CNT) in their cellular like micro-structure have presented an excellent mechanical energy absorption capacity. Although, several efforts have been progressed to modify the CNT structure for further enhancing their energy absorption capacity but yet no report has revealed the effect of magnetic field on the mechanical behavior of as-grown CNT mat that contains magnetic iron nanoparticles in the form of decorated nanoparticles on the surface or filled inside core of the CNT. We report a significant impact of the presence of magnetic content that modifies the mechanical behavior of the entangled CNT mat in the presence of an external magnetic field. The energy absorption capacity doubles when magnetic field was applied in the radial direction of the CNT mat under uniaxial compression. (C) 2013 AIP Publishing LLC.