Thin film amorphous semiconductor microwave switches

Microwave switches operating in the X band were designed and fabricated using amorphous chalcogenide semiconductors of composition GexTeyAsz. Threshold devices were shown to operate as microwave modulators at modulation frequencies of up to 100 MHz. No delay time was observed at the highest frequency although the modulation efficiency decreased above 10 MHz owing to the finite recovery time which was approximately 0.3 × 10−8s. The devices can also be used as variolossers, the insertion loss being 0.5 dB in the OFF state and increasing on switching from 5 dB at 1 mA device current to 18 dB at 100 mA.The behaviour of the threshold switches can be explained in terms of the formation of a conducting filament in the ON state with a constant current density of 2 × 104Acm−2 that is shunted by the device capacitance. The OFF state conductivity σ varies as ωn (0.5 < n < 1) which is characteristic of hopping in localized states. However, there was evidence of a decrease in n or a saturation of the conductivity at high frequencies.As a result of phase separation memory switches require no holding current in the ON state and may be used as novel latching semiconductor phase-shifters.

Electrical switching behavior of amorphous Al23Te77 thin film sample

The electrical switching behavior of amorphous Al23Te77 thin film devices, deposited by flash evaporation, has been studied in co-planar geometry. It is found that these samples exhibit memory type electrical switching. Scanning Electron Microscopic studies show the formation of a crystalline filament in the electrode region which is responsible for switching of the device from high resistance OFF state to low resistance ON state. It is also found that the switching behavior of thin film Al-Te samples is similar to that of bulk samples, with the threshold fields of bulk samples being higher. This has been understood on the basis of higher thermal conductance in bulk, which reduces the Joule heating and temperature rise in the electrode region. (C) 2010 Elsevier B.V. All rights reserved.

Characterization of a large-area PVDF thin film for electro-mechanical and ultrasonic sensing applications

Large-area PVDF thin films have been prepared and characterized for quasi-static and high frequency dynamic strain sensing applications. These films are prepared using hot press method and the piezoelectric phase (beta-phase) has been achieved by thermo-mechanical treatment and poling under DC field. The fabricated films have been characterized for quasi-static strain sensing and the linear strain-voltage relationship obtained is promising. In order to evaluate the ultrasonic sensing properties, a PZT wafer has been used to launch Lamb waves in a metal beam on which the PVDF film sensor is bonded at a distance. The voltage signals obtained from the PVDF films have been compared with another PZT wafer sensor placed on the opposite surface of the beam as a reference signal. Due to higher stiffness and higher thickness of the PZT wafer sensors, certain resonance patterns significantly degrade the sensor sensitivity curves. Whereas, the present results show that the large-area PVDF sensors can be superior with the signal amplitude comparable to that of PZT sensors and with no resonance-induced effect, which is due to low mechanical impedance, smaller thickness and larger area of the PVDF film. Moreover, the developed PVDF sensors are able to capture both A(0) and S-0 modes of Lamb wave, whereas the PZT sensors captures only A(0) mode in the same scale of voltage output. This shows promises in using large-area PVDF films with various surface patterns on structures for distributed sensing and structural health monitoring under quasi-static, vibration and ultrasonic situations. (C) 2010 Elsevier B.V. All rights reserved.

A PEFC With Pt-TiO2/C as Oxygen-Reduction Catalyst

Carbon-supported Pt-TiO2 (Pt-TiO2/C) catalyst with varying atomic ratio of Pt to Ti, namely, 1: 1, 2: 1, and 3: 1, is prepared by sol-gel method and its electrocatalytic activity toward oxygen-reduction reaction (ORR) is evaluated for the application in polymer electrolyte fuel cells (PEFCs). The optimum atomic ratio of Pt to Ti in Pt-TiO2/C and annealing temperature are established by cyclic voltammetry and fuel-cell-polarization studies. Pt-TiO2/C annealed at 750 degrees C with Pt and Ti in atomic ratio of 2: 1, namely, 750 Pt-TiO2/C (2: 1), shows enhanced electrocatalytic activity toward ORR. It is found that the incorporation of TiO2 with Pt ameliorates both electrocatalytic activity and stability of cathode in relation to pristine Pt cathode, currently being used in PEFCs. A power density of 0.75 W/cm(2) is achieved at 0.6 V for the PEFC with 750 Pt-TiO2/C (2: 1) as compared with 0.62 W/cm(2) at 0.6 V achieved with the PEFC comprising Pt/C as cathode catalyst while operating under identical conditions. Interestingly, carbon-supported Pt-TiO2 cathode exhibits only 6% loss in electrochemical surface area after 5000 potential cycles while it is as high as 25% for Pt/C. DOI: 10.1115/1.4002466]

Performance study of a pressure transducer with meandering-path thin film strain gauges

The performance of a pressure transducer with meandering-path thin film strain gauges has been studied. Details of the procedure followed to prepare the thin film strain gauge system on the pressure transducer diaphragm are given. The effect of post-deposition heat treatment on the resistance of the sensing films of the strain gauges and the insulating base layers are discussed. The output of the pressure transducer was studied with various input pressures and excitation voltages. It was found that up to a maximum of 10 V bridge excitation the output was stable and repetitive. The maximum non-linearity and hysteresis observed are ±0.15%, ±0.16% and ±0.14% FSO (full-scale output) for 5, 7.5 and 10 V excitation respectively. Information on the output behaviour of the pressure transducer with temperature is also included.

A novel laser direct write technique for fabrication of thin film MICs

A technique for fabrication of thin-film circuits for microwave integrated circuit (MIC) application is presented. This low-cost fabrication technique utilizes laser direct write of copper patterns on alumina substrates. The method obviates the need for photomasks and photolithography. The film deposition mechanism, deposit film analysis, and MIC fabrication sequence are presented. Performance evaluation of MICs fabricated using this technique is also included

Diaphragm-type sputtered platinum thin film strain gauge pressure transducer

A diaphragm-type pressure transducer with a sputtered platinum film strain gauge (sensing film) has been designed and fabricated. The various steps followed to prepare thin film strain gauges on the diaphragm are described. M-bond 450 adhesive (Measurements Group, USA) has been employed as the insulating layer. A detailed procedure to cure this layer is given. A d.c. sputtering method is employed to prepare the platinum films. This paper also includes details of the strain gauge pattern and its location on the diaphragm. A description of the output characteristics and overall behaviour of the platinum thin film pressure transducer is reported.

Effect of tolerance on the propagation characteristic of a superconducting thin film microstrip delay line

The propagation constant of a superconducting microstrip transmission delay line is evaluated using the spectral domain immitance approach, modelling the superconductor as a surface current having an equivalent surface impedance found through the complex resistive boundary condition. The sensitivity approach is used to study the beta variations with substrate parameters and film characteristics. Results show that the surface impedance does not have much influence on beta sensitivities with respect to epsilon r, W and h. However, it can be observed that the surface impedance plays a crucial role in determining the optimum design.

Multilayer Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 thin films for tunable microwave applications

Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3/Bi1.5Zn1.0Nb1.5O7 tunable multilayer thin film has been fabricated by pulsed laser ablation and characterized. Phase composition and microstructure of multilayer films were characterized by X-ray diffraction, scanning electron microscopy (SEM) and atomic force microscopy (AFM). The film has very smooth surface with RMS roughness of 1.5-2nm and grain size of 100-150 nm. Total film thickness has been measure to be 375 nm. The BZN thin films at 300 K, on Pt(1 1 1)/SiO2/Si substrate showed zero-field dielectric constant of 105 and dielectric loss tangent of 0.002 at frequency of 0.1 MHz. Thin films annealed at 700 degrees C shows the dielectric tunability of 18% with biasing field 500 kV/cm at 0.1 MHz. The multilayer thin film shows nonferroelectric behavior at room temperature. The good physical and electrical properties of multilayer thin films make them promising candidate for tunable microwave device applications. (C) 2010 Elsevier B.V. All rights reserved.

Synergitic Promotion of Electrooxidation of Methanol of Carbon-Supported PT-SN Catalysts

Electrooxidation of methanol in sulphuric acid on carbon-supported electrodes containing Pt-Sn bimetal catalysts prepared by an in-situ route is reported, The catalysts have been characterized employing chemical analyses, XRD, and XANES data in conjunction with electrochemistry. This study suggests that the Sn content in Pt-Sn bimetals produces: (i) a charge transfer from Sn to Pt and (ii) an increase in the coverage of adsorbed methanolic residues with the Sn content. From the electrode-kinetics data, it is inferred that while the electrodes of (3:3) Pt-Sn/C catalyst involve a 2-electron rate-limiting step akin to Pt/C electrodes, it is shifted to only 1-electron on (3:2) Pt-Sn/C, (3:3) Pt-Sn/C, and (3:4) Pt-Sn/C electrodes.

Structural, dielectric and ferroelectric properties of multilayer lithium tantalate thin films prepared by sol-gel technique

Multilayer lithium tantalate thin films were deposited on Pt-Si Si(111)/SiO2/TiO2/Pt(111)]substrates by sol-gel process. The films were annealed at different annealing temperatures (300, 450 and 650 degrees C) for 15 min. The films are polycrystalline at 650 degrees C and at other annealing conditions below 650 degrees C the films are in amorphous state. The films were characterized using X-ray diffraction, atomic force microscopy (AFM) and Raman spectroscopy. The AFM of images show the formation of nanograins of uniform size (50 nm) at 650 degrees C. These polycrystalline films exhibit spontaneous polarization of 1.5 mu C/cm(2) at an application of 100 kV/cm. The dielectric constant of multilayer film is very small (6.4 at 10 kHz) as compared to that of single crystal. (C) 2010 Elsevier B.V. All rights reserved.

Highly dispersed ultrafine Pt and PtRu nanoparticles on graphene: formation mechanism and electrocatalytic activity

We demonstrate a robust strategy for obtaining a high dispersion of ultrafine Pt and PtRu nanoparticles on graphene by exploiting the nucleation of a metal precursor phase on graphite oxide surfaces. Our method opens up new possibilities to engineer graphene-based hybrids for applications in multifunctional nanoscale devices.